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    2SK280 Search Results

    2SK280 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2800-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 40A 20Mohm To-220Ab Visit Renesas Electronics Corporation
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    2SK280 Price and Stock

    Sanken Electric Co Ltd 2SK2803

    MOSFET N-CH 450V 3A TO220F
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    DigiKey 2SK2803 Tube 3,750
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    Fujidenki 2SK2808-01MR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2808-01MR 636
    • 1 $1.62
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    2SK280 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK280 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK280 Unknown FET Data Book Scan PDF
    2SK2800 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2800 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2800 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2800-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2801 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2802 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2802 Hitachi Semiconductor Silicon N Channel MOS FET Low Frequency Power Switching Original PDF
    2SK2803 Allegro MicroSystems TRANS MOSFET 450V 3A 3TO-220F Original PDF
    2SK2803 Sanken Electric TRANS MOSFET N-CH 450V 3A 3TO-220F Original PDF
    2SK2803 Sanken Electric MOSFET Selection Guide Original PDF
    2SK2803 Sanken Electric MOSFET Selection Guide Original PDF
    2SK2804 Sanken Electric MOSFET Original PDF
    2SK2804 Sanken Electric MOSFET Selection Guide Original PDF
    2SK2804 Sanken Electric MOSFET Selection Guide Original PDF
    2SK2805 Allegro MicroSystems TRANS MOSFET 450V 15A 3TO-3PF Original PDF
    2SK2805 Sanken Electric TRANS MOSFET N-CH 450V 15A 3TO-3PF Original PDF
    2SK2805 Sanken Electric MOSFET Selection Guide Original PDF
    2SK2805 Sanken Electric MOSFET Selection Guide Original PDF

    2SK280 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2806-01 N-channel MOS-FET FAP-IIIB Series 30V > Features - 0,02Ω 35A 30W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters


    Original     		2SK2806-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2807-01L,S N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		2SK2807-01L PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2808-01MR N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		2SK2808-01MR PDF

    2SK2804

    Abstract: FM20 v40150
    Text: 2SK2804 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 450 V V(BR) DSS VGSS ±30 V ID ±5 A ±20 I GSS I DSS I D = 100µA, VGS = 0V VGS = ±30V 100 µA VDS = 450V, VGS = 0V


    Original     		2SK2804 2SK2804 FM20 v40150 PDF

    mosfet power amplifier

    Abstract: 2SK2808-01MR mosfet low vgs mosfet 830
    Text: 2SK2808-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof TO-220F Applications Switching regulators


    Original     		2SK2808-01MR O-220F mosfet power amplifier 2SK2808-01MR mosfet low vgs mosfet 830 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2809-01MR N-channel MOS-FET FAP-IIIB Series 60V > Features - 0,01Ω 50A 50W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters


    Original     		2SK2809-01MR PDF

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G Z 8th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source


    Original     		2SK2800 ADE-208-513G 220AB D-85622 Hitachi DSA00276 PDF

    2SK2803

    Abstract: FM20
    Text: 2SK2803 Absolute Maximum Ratings External dimensions 1 . FM20 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 450 V V(BR) DSS VGSS ±30 V ID ±3 A ±12 ID (pulse) *1 PD EAS *2 min 450 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit


    Original     		2SK2803 2SK2803 FM20 PDF

    12v power amplifier 30w

    Abstract: 2SK2807-01L
    Text: 2SK2807-01L,S N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		2SK2807-01L 12v power amplifier 30w PDF

    2SK2809-01MR

    Abstract: No abstract text available
    Text: 2SK2809-01MR N-channel MOS-FET FAP-IIIB Series 60V > Features - 0,01Ω 50A 50W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters


    Original     		2SK2809-01MR 2SK2809-01MR PDF

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537C Z 4th. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 0. 2Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1


    Original     		2SK2802 ADE-208-537C D-85622 Hitachi DSA00276 PDF

    Hitachi DSA002758

    Abstract: No abstract text available
    Text: 2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537 1st. Edition Features • Low on-resistance R DS on = 0. 2Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline 2SK2802 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK2802 ADE-208-537 Hitachi DSA002758 PDF

    2SK2809-01MR

    Abstract: 0257-R-0
    Text: I SPECIFICATION DEVICE NAME : TYPE NAME : SPEC. NO. : Power M O S FE T 2SK2809-01MR Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME DRAWN |aPPR0VED Fuji Electric Co.,Ltd. JI CHECKED, | J_ w -Y 0257-R-0 Ma 1.Scope


    OCR Scan     		2SK2809-01MR 0257-R-0 TQ-220F 0257-R-003a 0257-R-003a 2SK2809-01MR PDF

    12v power amplifier 30w

    Abstract: 2SK2806-01
    Text: F U JI 2SK2806-01 IM iL ô lE U iJ C â K ë FAP-IIIB Series N-channel MOS-FET 30V 0,02Q 35A 30W > Features - > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier


    OCR Scan     		2SK2806-01 O-220AB 00DM73D 12v power amplifier 30w PDF

    2SK2808-01MR

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2808-01 MR - SPÊC.NO. Fuji Electric CoMLtd. This Specification is subject to change without notice. DATE ' NAME APPROVED Fuji Electric Co.,Ltd. CHECKED I ' ' I DWG. NO. D RA W N / 1/0 Y 0257 -R -00 4a


    OCR Scan     		2SK2808-01MR 0257-R-004a To-220F 0257-R-003a 0257-R-003a 2SK2808-01MR PDF

    IRF P CHANNEL MOSFET

    Abstract: SD1575 P Channel Power MOSFET IRF
    Text: FUJI 2SK2806-01 e u s c u ija u ^ N-channel MOS-FET 30V 0,02& 35A 30W FAP-IIIB Series > Features - > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier


    OCR Scan     		2SK2806-01 IRF P CHANNEL MOSFET SD1575 P Channel Power MOSFET IRF PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2806-01 SPEC. NO. Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAW N' CHECKED . 1/, Y 0257-R-004a I 1 .Scope This specifies Fuji Power MOSFET 2SK2806-01


    OCR Scan     		2SK2806-01 0257-R-004a 2SK2806-01 To-220 0257-R-003a PDF

    l0241

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : TYPE NAME : SPEC. NO. : Power MOSFET 2SK2809-01MR Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAW N/ CHECKED/ w Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SK2809-01MR


    OCR Scan     		2SK2809-01MR 0257-R-004a 2SK2809-01MR T0-220F 0257-R-003a l0241 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2800 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-513G Z 8th. Edition June 1, 1998 Features • Low on-resistance R ds(o„) = 15 m il typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source


    OCR Scan     		2SK2800 ADE-208-513G -220A PDF

    220TQ

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIIB Series - Logic Level Operation, Ultra Low R d s ON , High Avalanche Ruggedness 30 - 60 Volts Device Type 2SK2806-01 2SK2807-01L.S 2SK2808-01 MR 2SK2890-01 MR 2SK2687-01 2SK2688-01L.S 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 2SK2894-01R


    OCR Scan     		2SK2806-01 2SK2807-01L 2SK2808-01 2SK2890-01 2SK2687-01 2SK2688-01L 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 220TQ PDF

    FUJI ELECTRIC

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2807-01 L,S : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE D R AW N NAME APPROVED Fuji Electric Co.,Ltd. CHECKED U I4- Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SK2807-01 L,S


    OCR Scan     		2SK2807-01 0257-fi-004a 0257-R-003a 0257-R-003a FUJI ELECTRIC PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2809-01MR FU JI N-channel MOS-FET Series F A P -IIIB 60V 0 ,0 1 Q 50 A 50W > Features - High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier DC-DC converters


    OCR Scan     		2SK2809-01MR G0DM732 P00H733 PDF

    Untitled

    Abstract: No abstract text available
    Text: FU JI aiLöEiruöüe 2SK2806-01 N-channel MOS-FET FAP-IIIB Series 30V > Features - 0 ,0 2 Q 35A 30W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier


    OCR Scan     		2SK2806-01 PDF

    2SK2806-01

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2806-01 SPEC. NO. Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED s § M ? iY 0257-fi-004a 1 1.Scope This specifies Fuji Power MOSFET 2SK2806-01


    OCR Scan     		2SK2806-01 0257-fi-004a To-220 0257-R-003a 0257-R-003a 2SK2806-01 PDF