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    2SK2835 Search Results

    2SK2835 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2835 Toshiba FETs - Nch 150V Original PDF
    2SK2835 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2835 Toshiba Original PDF
    2SK2835 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2835 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2835 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high current switching, DC-DC converter and motor drive applications Scan PDF
    2SK2835TP Toshiba 2SK2835TP - Trans MOSFET N-CH 200V 5A 3-Pin TPS T/R Original PDF

    2SK2835 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k2835

    Abstract: 2SK2835
    Text: 2SK2835 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2835 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.56Ω(標準) z オン抵抗が低い。


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    PDF 2SK2835 VDD100 K2835 20070701-JA k2835 2SK2835

    K2835

    Abstract: 2SK2835
    Text: 2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2835 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.5 S (typ.)


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    PDF 2SK2835 K2835 2SK2835

    k2835

    Abstract: 2SK2835
    Text: 2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2835 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.)


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    PDF 2SK2835 k2835 2SK2835

    k2835

    Abstract: 2SK2835
    Text: 2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2835 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.5 S (typ.)


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    PDF 2SK2835 k2835 2SK2835

    Untitled

    Abstract: No abstract text available
    Text: 2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2835 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.)


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    PDF 2SK2835

    k2835

    Abstract: No abstract text available
    Text: 2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2835 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.5 S (typ.)


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    PDF 2SK2835 k2835

    2SK2835

    Abstract: No abstract text available
    Text: 2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2835 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.5 S (typ.)


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    PDF 2SK2835 2SK2835

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


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    PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


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    PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent

    2SK1603

    Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
    Text: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1


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    PDF BCE0017A 2SK1603 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01

    2SK2835

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2835 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2835 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2 APPLICATIONS Low Drain-Source ON Resistance : Rd S (ON) —0.560 (Typ.)


    OCR Scan
    PDF 2SK2835

    2SK2835

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2835 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2835 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 APPLICATIONS Low Drain-Source ON Resistance : RßS (ON) = 0«56O (Typ.)


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    PDF 2SK2835 2SK2835

    DIODE U1J

    Abstract: 2SK2835 diode U1J ON
    Text: TOSHIBA 2SK2835 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2835 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2 APPLICATIONS •


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    PDF 2SK2835 DIODE U1J 2SK2835 diode U1J ON

    2SK2835

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2835 SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2835 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 8.0 ±0.2 Low Drain-Source ON Resistance : Rd S(ON)~ 0.56Î1 (Typ.)


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    PDF 2SK2835 20kiVth 2SK2835

    k2835

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2835 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2S K2835 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8. 0 ±0.2


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    PDF 2SK2835 K2835 --25fi --25V, k2835