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    2SK301 Price and Stock

    Formosa Microsemi Co Ltd FMOS2SK3018-Q1-H

    0.1A 30V N-Channel Enhancement M
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    DigiKey FMOS2SK3018-Q1-H Reel 300,000 3,000
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    ROHM Semiconductor 2SK3019TL

    MOSFET N-CH 30V 100MA EMT3
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    DigiKey 2SK3019TL Digi-Reel 21,486 1
    • 1 $0.32
    • 10 $0.198
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    2SK3019TL Cut Tape 21,486 1
    • 1 $0.32
    • 10 $0.198
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    2SK3019TL Reel 18,000 3,000
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    Newark 2SK3019TL Cut Tape 532 5
    • 1 $0.287
    • 10 $0.191
    • 100 $0.102
    • 1000 $0.094
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    Bristol Electronics 2SK3019TL 53,709
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    2SK3019TL 42,522 12
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    • 100 $0.225
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    Quest Components 2SK3019TL 10,686
    • 1 $0.385
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    2SK3019TL 5,683
    • 1 $0.5
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    2SK3019TL 2,360
    • 1 $0.64
    • 10 $0.64
    • 100 $0.64
    • 1000 $0.192
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    2SK3019TL 736
    • 1 $0.6
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    • 100 $0.18
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    2SK3019TL 197
    • 1 $0.154
    • 10 $0.154
    • 100 $0.0963
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    2SK3019TL 38
    • 1 $0.315
    • 10 $0.315
    • 100 $0.1575
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    TTI 2SK3019TL Reel 3,000
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    Ameya Holding Limited 2SK3019TL 2,485 1
    • 1 $0.3626
    • 10 $0.24304
    • 100 $0.10094
    • 1000 $0.07056
    • 10000 $0.05586
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    ComSIT USA 2SK3019TL 18,000
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    Velocity Electronics 2SK3019TL 9,000
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    Chip 1 Exchange 2SK3019TL 5,998
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    Avnet Asia 2SK3019TL 24 Weeks 3,000
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    Avnet Silica 2SK3019TL 11 Weeks 3,000
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    Vyrian 2SK3019TL 7,405
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    Micro Commercial Components 2SK3018-TP

    MOSFET N-CH 30V 100MA SOT323
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    DigiKey 2SK3018-TP Cut Tape 14,673 1
    • 1 $0.36
    • 10 $0.219
    • 100 $0.36
    • 1000 $0.09064
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    2SK3018-TP Digi-Reel 14,673 1
    • 1 $0.36
    • 10 $0.219
    • 100 $0.36
    • 1000 $0.09064
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    2SK3018-TP Reel 12,000 3,000
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    • 10000 $0.06936
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    Mouser Electronics 2SK3018-TP 152
    • 1 $0.36
    • 10 $0.219
    • 100 $0.138
    • 1000 $0.089
    • 10000 $0.054
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    Newark 2SK3018-TP Cut Tape 2,330 5
    • 1 $0.382
    • 10 $0.236
    • 100 $0.117
    • 1000 $0.102
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    TME 2SK3018-TP 4,930 5
    • 1 -
    • 10 $0.16
    • 100 $0.081
    • 1000 $0.072
    • 10000 $0.068
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    Vyrian 2SK3018-TP 6,549
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    Micro Commercial Components 2SK3019-TP

    MOSFET N-CH 30V 100MA SOT523
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    DigiKey 2SK3019-TP Cut Tape 2,955 1
    • 1 $0.27
    • 10 $0.162
    • 100 $0.27
    • 1000 $0.06568
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    2SK3019-TP Digi-Reel 2,955 1
    • 1 $0.27
    • 10 $0.162
    • 100 $0.27
    • 1000 $0.06568
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    2SK3019-TP Reel 2,000 3,000
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    • 10000 $0.04896
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    Mouser Electronics 2SK3019-TP 8,201
    • 1 $0.27
    • 10 $0.162
    • 100 $0.102
    • 1000 $0.065
    • 10000 $0.041
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    Newark 2SK3019-TP Cut Tape 2,980 5
    • 1 $0.286
    • 10 $0.174
    • 100 $0.084
    • 1000 $0.073
    • 10000 $0.073
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    TME 2SK3019-TP 2,315 5
    • 1 -
    • 10 $0.16
    • 100 $0.0605
    • 1000 $0.0534
    • 10000 $0.048
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    Micro Commercial Components 2SK3019A-TP

    N-CHANNEL MOSFET SOT-523
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    DigiKey 2SK3019A-TP Digi-Reel 2,755 1
    • 1 $0.34
    • 10 $0.207
    • 100 $0.34
    • 1000 $0.08506
    • 10000 $0.08506
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    2SK3019A-TP Cut Tape 2,755 1
    • 1 $0.34
    • 10 $0.207
    • 100 $0.34
    • 1000 $0.08506
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    Mouser Electronics 2SK3019A-TP
    • 1 $0.34
    • 10 $0.203
    • 100 $0.092
    • 1000 $0.082
    • 10000 $0.054
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    Find more 2SK301 price and stock on Findchips.com

    2SK301 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK301 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK301 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK301 Panasonic N-Channel Junction FET Original PDF
    2SK301 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK301 Unknown FET Data Book Scan PDF
    2SK301 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK301 Panasonic Si N-channel junction. AF amplifier, switching. Scan PDF
    2SK301 Panasonic Silicon MOS FETs Scan PDF
    2SK3011 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK3012 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF
    2SK3012 Shindengen Electric VX-2 Series Power MOSFET Original PDF
    2SK3012 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK3012 Shindengen Electric VX-2 Series Power MOSFET Original PDF
    2SK3013 Shindengen Electric VX-2 Series Power MOSFET Original PDF
    2SK3013 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK3013 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF
    2SK3017 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK3017 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3017 Toshiba V-MOS, S,S-Reg DC-DC Converter, MOS-FET N-Channel enhanced Original PDF
    2SK3017 Toshiba Original PDF

    2SK301 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type Product specification 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 1 ● Fast switching speed. 0.55 Drain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Drive circuits can be simple.


    Original     		2SK3018 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3019 N-Channel MOSFET P b Lead Pb -Free 3 1 2 1. GATE FEATURES: * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)


    Original     		2SK3019 OT-523 SC-75) 03-Jun-2011 OT-523 PDF

    F16W60

    Abstract: 2SK3012 F16W60VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK3012 F16W60VX2 600V 12A N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		2SK3012 F16W60VX2) 00-200V 500mJ F16W60 2SK3012 F16W60VX2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 5.0±0.2 4.0±0.2 5.1±0.2 • Features ■ Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK0301 2SK301) SC-43 PDF

    2SA20

    Abstract: "dual TRANSISTORs" resistance dual audio circuit diagram 2SA2018 2SK3019
    Text: EMF6 Transistors Power management dual transistors EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.


    Original     		2SA2018 2SK3019 2SA20 "dual TRANSISTORs" resistance dual audio circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits


    Original     		OT-23 2SK3018 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating


    Original     		2SK3019 100mA) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.05 High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current


    Original     		2SK3017 PDF

    2sk3019

    Abstract: 2SA2018
    Text: UMF6N Transistors Power management dual transistors UMF6N 2SA2018 and 2SK3019 are housed independently in a UMT package. 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.


    Original     		2SA2018 2SK3019 SC-88 PDF

    2sk3019

    Abstract: 2SC5585
    Text: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. zApplication Power management circuit zStructure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2


    Original     		2SC5585 2SK3019 PDF

    2SK3017

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance


    OCR Scan     		2SK3017 L-12-( PDF

    2SC5585

    Abstract: 2SK3019
    Text: UMF9N Transistors Power management dual transistors UMF9N 2SC5585 and 2SK3019 are housed independently in a UMT package. 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.


    Original     		2SC5585 2SK3019 SC-88 PDF

    2SK3019

    Abstract: 4405 2SK301
    Text: SPICE PARAMETER 2SK3019 by ROHM TR Div. * 2SK3019 NMOS model * Date: 2006/09/07 .MODEL 2SK3019 NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12


    Original     		2SK3019 M2SK3019 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 2SK3019 4405 2SK301 PDF

    2SK3019

    Abstract: EMF33
    Text: EMF33 Transistors Power management, Dual-chip Bipolar Transistor EMF33 zApplications Power management circuit zDimensions Unit : mm EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are housed independently in the EMT6 package.


    Original     		EMF33 DTB513Z 2SK3019 2SK3019 EMF33 PDF

    JAPAN transistor

    Abstract: 30v N channel MOS FET 2SK3019 ON503
    Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating


    Original     		2SK3019 100mA) JAPAN transistor 30v N channel MOS FET ON503 PDF

    2SK3018

    Abstract: UM5K1N
    Text: UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET UMT5 2.0 1.3 zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.


    Original     		2SK3018 100mA) 30ipment UM5K1N PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits


    Original     		OT-523 2SK3019 OT-523 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits


    Original     		OT-523 2SK3019 OT-523 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7±0.2 ● Low noies, high gain ● High gate to drain voltage VGDO


    Original     		2SK0301 2SK301) PDF

    UM5K1N

    Abstract: 2SK3018 two transistor forward
    Text: Transistor Small switching 30V, 0.1A UM5K1N FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits.


    Original     		2SK3018 100mA) UM5K1N two transistor forward PDF

    2SC5585

    Abstract: 2SK3019
    Text: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. !Application Power management circuit !Structure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2


    Original     		2SC5585 2SK3019 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3019T N-Channel MOSFET P b Lead Pb -Free 3 1 2 FEATURES: 1. GATE * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)


    Original     		2SK3019T OT-523 SC-75) 03-Jun-2011 OT-523 PDF

    Untitled

    Abstract: No abstract text available
    Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating


    Original     		2SK3019 100mA) PDF

    2SC5585

    Abstract: 2SK3019 T108 IMF9
    Text: UMF9N / IMF9 Transistors Power management dual transistors UMF9N / IMF9 2SC5585 and 2SK3019 are housed independently in a UMT or SMT package. !External dimensions (Units : mm) !Application Power management circuit 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6)


    Original     		2SC5585 2SK3019 SC-88 T108 IMF9 PDF