2SK3019 Search Results

Contextual Info: 2SK3019 N-Channel MOSFET P b Lead Pb -Free 3 1 2 1. GATE FEATURES: * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)

2SA20

Abstract: "dual TRANSISTORs" resistance dual audio circuit diagram 2SA2018 2SK3019
Contextual Info: EMF6 Transistors Power management dual transistors EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

2sk3019

Abstract: 2SA2018
Contextual Info: UMF6N Transistors Power management dual transistors UMF6N 2SA2018 and 2SK3019 are housed independently in a UMT package. 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

2sk3019

Abstract: 2SC5585
Contextual Info: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. zApplication Power management circuit zStructure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2

2SC5585

Abstract: 2SK3019
Contextual Info: UMF9N Transistors Power management dual transistors UMF9N 2SC5585 and 2SK3019 are housed independently in a UMT package. 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

2SK3019

Abstract: 4405 2SK301
Contextual Info: SPICE PARAMETER 2SK3019 by ROHM TR Div. * 2SK3019 NMOS model * Date: 2006/09/07 .MODEL 2SK3019 NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12

2SK3019

Abstract: EMF33
Contextual Info: EMF33 Transistors Power management, Dual-chip Bipolar Transistor EMF33 zApplications Power management circuit zDimensions Unit : mm EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are housed independently in the EMT6 package.

JAPAN transistor

Abstract: 30v N channel MOS FET 2SK3019 ON503
Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits

2SC5585

Abstract: 2SK3019
Contextual Info: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. !Application Power management circuit !Structure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2

Contextual Info: 2SK3019T N-Channel MOSFET P b Lead Pb -Free 3 1 2 FEATURES: 1. GATE * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)

Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

2SA2018

Abstract: 2SK3019 T108 2SA20
Contextual Info: UMF6N / IMF6 Transistors Power management dual transistors UMF6N / IMF6 2SA2018 and 2SK3019 are housed independently in a UMT or SMT package. !External dimensions (Units : mm) !Application Power management circuit 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6)

Contextual Info: WILLAS FM120-M+ THRU 2SK3019TT1 FM1200-M+ SOT-523 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline N-channel MOSFET Features FEATURES • Batch process design, excellent power dissipation offers

2SK3019

Abstract: SC-75A
Contextual Info: 2SK3019 Transistor Small switching 30V, 0.1A 2SK3019 !External dimensions (Units : mm) !Applications Interfacing, switching (30V, 100mA) 1.6±0.2 0.7±0.1 1.0±0.1 0.1±0.55 (2) (2) (3) 0.8±0.1 (1) (1) 0.5 0.3 +0.1 −0.05 1.6±0.1 0.5 0~0.1 0.15±0.05

2TR13

Abstract: 2SK3019
Contextual Info: EM6K1 Transistor Small switching 30V, 0.1A EM6K1 !External dimensions (Units : mm) !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half.

MOSFET IGSS 100A

Abstract: 30v N channel MOS FET 2SK3019 nch power mosfet
Contextual Info: 2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 zDimensions Unit : mm zStructure Silicon N-channel MOSFET EMT3 0.7 1.6 0.55 0.3 (1) 0.2 0.2 0.5 0.5 0.15 0.1Min. 0.8 (2) 1.6 (3) zApplications Interfacing, switching (30V, 100mA) 1.0 (1)Source zFeatures 1) Low on-resistance.

Contextual Info: Power management dual transistors EMF32 / UMF32N DTA143T and 2SK3019 are housed independently in a EMT6 package. Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (3) (4) (5) (2) (1) 1.2 1.6 0.5 0.13

EMF32

Abstract: f32 TRANSISTOR 2SK3019 DTA143T UMF32 UMF32N F32 marking
Contextual Info: EMF32 / UMF32N Transistors Power management dual transistors EMF32 / UMF32N DTA143T and 2SK3019 are housed independently in a EMT6 package. (3) (4) 0.22 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

2SK3019

Abstract: current Source Swithing
Contextual Info: EM6K1 Transistor Small switching 30V, 0.1A EM6K1 !External dimensions (Units : mm) !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half.

02M45

Contextual Info: Data Sheet 2.5V Drive Nch MOSFET 2SK3019EB  Structure Silicon N-channel MOSFET  Dimensions Unit : mm EMT3F Features 1) High-speed switching. 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy. (3) (1) (2)

Contextual Info: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. zApplication Power management circuit zStructure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2