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    2SK32 Search Results

    2SK32 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3298B-S17-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3299B-S19-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-25LK, /Tube Visit Renesas Electronics Corporation
    2SK3294-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-25, /Bag Visit Renesas Electronics Corporation
    2SK3221-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-45F, /Bag Visit Renesas Electronics Corporation
    2SK3230-T1-A Renesas Electronics Corporation Switching N-Channel Power Mosfet, TUSM, /Embossed Tape Visit Renesas Electronics Corporation
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    2SK32 Price and Stock

    Rochester Electronics LLC 2SK3278-E

    N-CHANNEL SILICON MOSFET
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    DigiKey 2SK3278-E Bulk 430
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    2SK3278-E Bulk 430
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    Rochester Electronics LLC 2SK3221-AZ

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK3221-AZ Bulk 163
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    Panasonic Electronic Components 2SK326800L

    MOSFET N-CH 100V 15A U-DL
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    DigiKey 2SK326800L Digi-Reel 1
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    2SK326800L Cut Tape
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    Quest Components 2SK326800L 7,200
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    Rochester Electronics LLC 2SK3293-TD-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK3293-TD-E Bulk 1,211
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    Rochester Electronics LLC 2SK3230-T1-A

    SMALL SIGNAL FET
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    DigiKey 2SK3230-T1-A Bulk 1,159
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    Find more 2SK32 price and stock on Findchips.com

    2SK32 Datasheets (270)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK32 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK32 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK32 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SK32 Unknown FET Data Book Scan PDF
    2SK32 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK32 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK320 Hitachi Semiconductor SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) Scan PDF
    2SK320 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK320 Unknown FET Data Book Scan PDF
    2SK320 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3200 Sanken Electric TRANS MOSFET N-CH 500V 10A 3TO-220F Original PDF
    2SK3200 Sanken Electric MOSFET Selection Guide Original PDF
    2SK3200 Sanken Electric N-Channel MOSFET Original PDF
    2SK3201 Toshiba Original PDF
    2SK3203(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3203L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3203(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3203S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3204 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3204 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    ...

    2SK32 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A


    Original     		2SK3214 REJ03G1093-0400 PRSS0004AC-A O-220AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3271-01 N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±100A 155W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier


    Original     		2SK3271-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: IC Transistors MOSFET SMD Type Product specification 2SK3274S TO-252 Features Low on-resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 typ. +0.1 0.60-0.1 2.3 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 High speed switching +0.15 0.50-0.15


    Original     		2SK3274S O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3296 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Built-in gate protection diode Surface mount device available +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max


    Original     		2SK3296 O-263 PDF

    k3265

    Abstract: 2SK3265 K3265 DATASHEET
    Text: 2SK3265 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK3265 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.72 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 :|Yfs| = 7.0 S (標準)


    Original     		2SK3265 SC-67 2-10R1B K3265 2002/95/EC) k3265 2SK3265 K3265 DATASHEET PDF

    Untitled

    Abstract: No abstract text available
    Text: IC Transistors SMD Type Product specification 2SK3224 TO-252 +0.2 9.70-0.2 Low Ciss : Ciss = 790 pF TYP. Built-in Gate Protection Diode +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.8 0.50-0.7 3.80 MAX. VGS = 4.0 V, ID = 10 A Unit: mm +0.1 2.30-0.1 +0.15 5.55-0.15


    Original     		2SK3224 O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3299 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 RDS on = 0.75 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low on-state resistance MAX. (VGS = 10 V, ID = 5.0 A) Avalanche capability ratings


    Original     		2SK3299 O-263 PDF

    ADE-208-742

    Abstract: 2SK3287 DSA003643
    Text: 2SK3287 Silicon N Channel MOS FET High Speed Switching ADE-208-742 C Z 4th.Edition. June 1999 Features • Low on-resistance R DS = 1.26 typ. (VGS = 10 V , ID = 150 mA) R DS = 2.8 typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. • Small package (MPAK)


    Original     		2SK3287 ADE-208-742 2SK3287 DSA003643 PDF

    2SK3289

    Abstract: DSA003643
    Text: 2SK3289 Silicon N Channel MOS FET High Speed Switching ADE-208-743B Z Target Specification 3rd.Edition. December 1998 Features • Low on-resistance R DS = 1.26Ω typ. (at V GS =10V , ID =150mA) R DS = 2.8Ω typ. (at V GS =4V , ID =50mA) • 4V gate drive device


    Original     		2SK3289 ADE-208-743B 150mA) 2SK3289 DSA003643 PDF

    2sk3262

    Abstract: 2SK3262-01MR MOSFET 200v 20A n.channel
    Text: 2SK3262-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters


    Original     		2SK3262-01MR O-220F15 2sk3262 2SK3262-01MR MOSFET 200v 20A n.channel PDF

    d1379

    Abstract: 2SK3225
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE


    Original     		2SK3225 2SK3225 O-251 2SK3225-Z O-252 O-251/TO-252 O-251) d1379 PDF

    2SK3218-01

    Abstract: 2SK3219-01MR
    Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters


    Original     		2SK3219-01MR O-220F15 2SK3218-01 2SK3219-01MR PDF

    Hitachi DSA0076

    Abstract: 2SK3212
    Text: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS =0.1 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2


    Original     		2SK3212 ADE-208-752A 220FM Hitachi DSA0076 2SK3212 PDF

    2SK3235

    Abstract: Hitachi DSA0076
    Text: 2SK3235 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1371 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.3 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)


    Original     		2SK3235 ADE-208-1371 2SK3235 Hitachi DSA0076 PDF

    Hitachi DSA002753

    Abstract: No abstract text available
    Text: 2SK3287 Silicon N Channel MOS FET High Speed Switching ADE-208-742 C Z 4th.Edition. June 1999 Features • • • Low on-resistance RDS = 1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) 4 V gate drive device. Small package (MPAK)


    Original     		2SK3287 ADE-208-742 2SK3287 Hitachi DSA002753 PDF

    2SK3296

    Abstract: 2SK3296-S 2SK3296-ZJ MP-25 nec 2sk3296
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,


    Original     		2SK3296 2SK3296 O-220AB 2SK3296-S O-262 2SK3296-ZJ O-263 2SK3296-S 2SK3296-ZJ MP-25 nec 2sk3296 PDF

    2SK3295

    Abstract: 2SK3295-S 2SK3295-ZJ MP-25
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3295 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3295 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,


    Original     		2SK3295 2SK3295 O-220AB 2SK3295-S O-262 2SK3295-ZJ O-263 2SK3295-S 2SK3295-ZJ MP-25 PDF

    ac 1501

    Abstract: nec 502 2SK3224 transistor k 790
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3224 is N-Channel MOS Field Effect Transistor designed for Package Drawings Unit : mm high current switching applications.


    Original     		2SK3224 2SK3224 O-251/TO-252 ac 1501 nec 502 transistor k 790 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3269 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3


    Original     		2002/95/EC) 2SK3269 22nteed PDF

    ms 7301

    Abstract: ltd 4601 g
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3277 Silicon N-channel power MOSFET Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 0.5±0.1 0.8 max. 1.8±0.1 7.3±0.1 • Avalanche energy capability guaranteed • High-speed switching


    Original     		2002/95/EC) 2SK3277 ms 7301 ltd 4601 g PDF

    2SK3225

    Abstract: D1379
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3225 is N-Channel MOS Field Effect Transistor designed for Package Drawings Unit : mm high current switching applications.


    Original     		2SK3225 2SK3225 O-251/TO-252 D1379 PDF

    D1406

    Abstract: 2SK3294 2SK3294-S 2SK3294-ZJ MP-25 c4006
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3294 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3294 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC


    Original     		2SK3294 2SK3294 O-262 2SK3294-ZJ O-220AB 2SK3294-S O-263 MP-25ZJ) O-220AB) D1406 2SK3294-S 2SK3294-ZJ MP-25 c4006 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T his p ro d u ct is N -C hannel M O S Field E ffe ct T ra n sisto r PA R T N U M B E R PACKAGE 2S K 3 2 2 4 TO-251 2 S K 3 2 2 4 -Z


    OCR Scan     		2SK3224 O-251 D13797EJ1V0DS00 PDF

    2SK325

    Abstract: RA 450 T 20
    Text: 2SK325 7T-M O S il € o » » » » E * o 7s4 y 3-'S ? U =F n U ~ ^ , D C - D C = > > ' < o £ mm K 7-f ?m fff2ä0MAX. Í¿21.0MAX. — s « X i§it£ET*to : v (BR)DSS=450V -fao9 01.0 -ao4 K Í * ^ * 5 0 5 * ^ 0 : IYfB I = 5 S ( a i 3 S ) ( I D - 5 A )


    OCR Scan     		2SK325 100nA( 2-21E1B 10mAf yDS-10V, VDS-10V, -200V 2SK325 RA 450 T 20 PDF