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    2SK3265 Search Results

    2SK3265 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3265 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3265 Toshiba FETs - Nch 500V Original PDF
    2SK3265 Toshiba Original PDF
    2SK3265 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V) Scan PDF
    2SK3265 Toshiba N-channel MOSFET for chopper regulators DC-DC converter, and motor drive applications, 700V, 10A Scan PDF
    2SK3265(F,T) Toshiba 2SK3265 - MOSFET N-CH 700V 10A SC-67 Original PDF
    2SK3265FT Toshiba 2SK3265FT - Trans MOSFET N-CH 700V 10A 3-Pin(3+Tab) TO-220NIS T/R Original PDF

    2SK3265 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k3265

    Abstract: 2SK3265 K3265 DATASHEET
    Text: 2SK3265 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK3265 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.72 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 :|Yfs| = 7.0 S (標準)


    Original     		PDF 2SK3265 SC-67 2-10R1B K3265 2002/95/EC) k3265 2SK3265 K3265 DATASHEET

    K3265 Transistor

    Abstract: k3265 2SK3265
    Text: 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3265 Chopper Regulators DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK3265 K3265 Transistor k3265 2SK3265

    k3265

    Abstract: K3265 Transistor
    Text: 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3265 Chopper Regulators DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK3265 k3265 K3265 Transistor

    K3265

    Abstract: K3265 Transistor 2SK3265
    Text: 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3265 Chopper Regulators DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK3265 K3265 K3265 Transistor 2SK3265

    2SK3265

    Abstract: No abstract text available
    Text: 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3265 Chopper Regulators DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK3265 2SK3265

    k3265

    Abstract: K3265 Transistor K3265 Transistor relevant K3265 DATASHEET 2SK3265
    Text: 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIV 2SK3265 Chopper Regulators DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK3265 k3265 K3265 Transistor K3265 Transistor relevant K3265 DATASHEET 2SK3265

    k3265

    Abstract: K3265 Transistor K3265 DATASHEET 2SK3265
    Text: 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3265 Chopper Regulators DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK3265 k3265 K3265 Transistor K3265 DATASHEET 2SK3265

    K3265 Transistor

    Abstract: K3265 2SK3265
    Text: 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIV 2SK3265 Chopper Regulators DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK3265 K3265 Transistor K3265 2SK3265

    2SK3265

    Abstract: No abstract text available
    Text: 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3265 Chopper Regulators DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK3265 2SK3265

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


    Original     		PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    n 1106 s

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3265 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK3265 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • •


    OCR Scan     		PDF 2SK3265 n 1106 s

    2SK3265

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3265 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK3265 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • •


    OCR Scan     		PDF 2SK3265 2SK3265

    2SK3265

    Abstract: k326
    Text: TOSHIBA 2SK3265 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK3265 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 2.7±0.2 r


    OCR Scan     		PDF 2SK3265 2SK3265 k326

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3265 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK3265 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF 2SK3265

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3265 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK3265 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK3265