2SK353701MR Search Results

2SK353701MR Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK3537-01MR		Fuji Electric	N-CHANNEL SILICON POWER MOSFET		Original	PDF
2SK3537-01MR		Fuji Electric	Power MOSFET, 150V 23A, MOS-FET N-Channel enhanced		Original	PDF

2SK353701MR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK3537-01MR Abstract: No abstract text available Text: DATE Nov.-06-'01 CHECKED Nov.-06-'01 CHECKED Nov.-06-'01 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without	Original	2SK3537-01MR MS5F5016 H04-004-05 H04-004-03 2SK3537-01MR	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
2sk3537 Abstract: 2SK3537-01MR Text: 2SK3537-01MR 200304 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators	Original	2SK3537-01MR O-220F 2sk3537 2SK3537-01MR	PDF
mp2a5100 Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 Text: 富士電機半導体総合カタログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors	Original	RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28	PDF
F5022 Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018 Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01	Original	2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018	PDF
STK412-750 Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870 Text: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc	Original	SELT2WA10C SELT2WC10C SELT2WD10C SELT2WE10C SELT2WF10C SELT2WH10C SELT2WJ10C SELT2WK10C SELT2WA13C SELT2WC13C STK412-750 STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870	PDF
2SK3679 Abstract: 2sk3598 2SK3599-01MR 2SK3677-01MR 2sk3680-01 2sk3580-01mr 2sk3603 2SK3532 2SK3469-01MR 2SK3532-01MR Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形式 Device type VDSS ID ID pulse RDS (on) PD ＊2 Max. ＊1	Original	2SK3598-01 2SK3599-01MR 2SK3600-01L, 2SK3601-01 2SK3644-01 2SK3645-01MR 2SK3646-01L, 2SK3647-01 2SK3586-01 2SK3587-01MR 2SK3679 2sk3598 2SK3677-01MR 2sk3680-01 2sk3580-01mr 2sk3603 2SK3532 2SK3469-01MR 2SK3532-01MR	PDF
2SK3525 Abstract: 2sk3550 2SK3549 2sk3523 2sk3528 2sk3530 TO53 2sk3451 2SK3531 2SK3549-01 Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01	Original	52SK3522-01 2SK3523-01R 2SK3524-01 2SK3525-01MR 2SK3526-01L, 2SK3501-01 2SK3502-01MR 2SK3513-01L, 2SK3450-01 2SK3451-01MR 2SK3525 2sk3550 2SK3549 2sk3523 2sk3528 2sk3530 TO53 2sk3451 2SK3531 2SK3549-01	PDF
2sk3528 Abstract: 2SK3451 2SK3451-01MR 2SK3523-01R 2SK3555-01MR 2SK3528-01R 2SK3549 2SK3555 2SK3502-01MR 2SK3531-01 Text: POWER MOS FET Quick Selection Guide Super FAP-G series Low-on resistance and low gate charge ID Drain-source voltage VDSS Voltage Amps. 150 250 450 Package 500 600 800 4.6 900 2SK3531-01(2.5) TO-220AB 2SK3532-01MR(2.5) TO-220F 5 2SK3517-01(1.5) 2SK3529-01(1.9)	Original	2SK3531-01 O-220AB 2SK3532-01MR O-220F 2SK3517-01 2SK3529-01 2SK3516-01MR 2SK3539-01MR 2sk3528 2SK3451 2SK3451-01MR 2SK3523-01R 2SK3555-01MR 2SK3528-01R 2SK3549 2SK3555 2SK3502-01MR	PDF
48v 50a power supply Abstract: 2SK3537-01MR Text: 2SK3537-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply	Original	2SK3537-01MR O-220F 48v 50a power supply 2SK3537-01MR	PDF