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    2SK6 Search Results

    2SK6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK680A-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK679A-T-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK660-A Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK681A-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, SP-8, /Bag Visit Renesas Electronics Corporation
    2SK680A-T2-AZ Renesas Electronics Corporation Power MOSFETs for Automotive, POMM, / Visit Renesas Electronics Corporation
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    2SK6 Price and Stock

    Rochester Electronics LLC 2SK680A-T2-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK680A-T2-AZ Bulk 27,350 650
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    Rochester Electronics LLC 2SK669-AC

    MOSFET N-CH 50V 100MA 3SPA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK669-AC Box 20,000 1,567
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    • 10000 $0.19
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    Rochester Electronics LLC 2SK669

    N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK669 Bulk 6,660 1,567
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    Rochester Electronics LLC 2SK669K-AC

    N-CHANNEL SMALL SIGNAL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK669K-AC Bulk 5,560 2,959
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    Rochester Electronics LLC 2SK681A-AZ

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK681A-AZ Bulk 4,181 812
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    Find more 2SK6 price and stock on Findchips.com

    2SK6 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK60 Unknown FET Data Book Scan PDF
    2SK60 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK60 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK60 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK60 Sony Silicon N-Channel Junction V-FET Scan PDF
    2SK600 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK600 Unknown FET Data Book Scan PDF
    2SK601 Panasonic TRANS MOSFET N-CH 80V 0.5A 3MINIP3-F1 Original PDF
    2SK601 Panasonic Silicon N-Channel MOS FET Original PDF
    2SK601 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK601 Panasonic N-Channel MOS FET Original PDF
    2SK601 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK601 Unknown FET Data Book Scan PDF
    2SK601 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK601 Panasonic Silicon MOS FETs Scan PDF
    2SK602 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK602 Unknown FET Data Book Scan PDF
    2SK60-2 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK603 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK603 Unknown FET Data Book Scan PDF
    ...

    2SK6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK680A

    Abstract: 5A 53
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK680A SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Not necessary to consider driving current because of its high input impeance. 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1


    Original     		PDF 2SK680A OT-89 2SK680A 5A 53

    2SK0662

    Abstract: 2SK662
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SK0662 2SK662) 2SK0662 2SK662

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK0620 (2SK620) Silicon N-Channel MOS FET unit: mm For switching 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 (0.65) ● High-speed switching ● Mini-type package, allowing downsizing of the sets and automatic


    Original     		PDF 2SK0620 2SK620)

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.75 max. • High-speed switching • Allowing to supply with the radial taping 15.6±0.5 • Features (0.8) (0.8) 3.0±0.2


    Original     		PDF 2SK0655 2SK655)

    2SK0601

    Abstract: 2SK601
    Text: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open)


    Original     		PDF 2SK0601 2SK601) 2SK0601 2SK601

    Untitled

    Abstract: No abstract text available
    Text: 2SK690 High Frequency FETs 2SK690 GaAs N-Channel MES Unit : mm For UHF medium-output power amplification 1.5±0.1 Downsizing of sets by mini power package and automatic insertion by magazine packing are available. 45˚ +0.1 1.0–0.2 0.4±0.08 +0.25 ● 0.1


    Original     		PDF 2SK690 tem10dBm

    Untitled

    Abstract: No abstract text available
    Text: 2SK676H5-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V) I(D) Max. (A)70m P(D) Max. (W) Maximum Operating Temp (øC) I(DSS) Min. (A)10m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m


    Original     		PDF 2SK676H5-2

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665 (2SK665) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching


    Original     		PDF 2002/95/EC) 2SK0665 2SK665)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1


    Original     		PDF 2002/95/EC) 2SK0663 2SK663)

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL


    Original     		PDF 2SK0614 2SK614)

    2SK644

    Abstract: t4y diode
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E TT-MOSll 2SK644 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low Drain-Source ON Resistance: RüS(ON)=0-7i2(Typ.)


    OCR Scan     		PDF 2SK644 100nA 20kii) 2SK644 t4y diode

    2SK643

    Abstract: No abstract text available
    Text: 2SK643 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE TT-MOSn INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low D r a i n - S o u r c e ON R e sistance : R D S ( 0 N ) = 0-6£î(Typ.)


    OCR Scan     		PDF 2SK643 100nA 300uA 2SK643

    ic sony 0642

    Abstract: sony 0642 2SK677 IC 0642 sony ke 931 0642 sony
    Text: _ 2SK677H5 SONY» AIGaAs/GaAs Low Noise Microwave H EM T C H IP Description The 2 S K 6 7 7 H 5 is an A IG aA s/G aA s HEM T c h ip fa b ric a te d by M O CVD M e ta l O rganic C hem ical V a p o r D e p o sitio n . T his 0 .5 m icro n gate FET fe a tu re s very lo w n o ise fig u re and h ig h


    OCR Scan     		PDF 2SK677H5 ic sony 0642 sony 0642 2SK677 IC 0642 sony ke 931 0642 sony

    k613

    Abstract: 2SK013 2SK613 2SK613-3 sony IT 243 sony m-100
    Text: Sony. 2SK613 Silicon N-Channel Junction FET U n it: mm P a cka g e O u tlin e D escrip tion M aking the best of Epitaxy and Pattern latest technology, 2 S K 6 13 accom plishes so far unattain­ able levels of performance. Usage with head am plifiers for video cam eras


    OCR Scan     		PDF 2SK613 2SK613 M-232 k613 2SK013 2SK613-3 sony IT 243 sony m-100

    yc 545

    Abstract: 2SK678
    Text: 2SK678 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E ^-MOSii INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in n DRIVE APPLICATIONS. 20.5 MAX. • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK678 100nA 300nA 20ki2) yc 545 2SK678

    transistor jsx

    Abstract: 2SK681 ipw fet s0822 t460 transistor
    Text: ^ £ — 5 7 . 5 / — h M O S W * im . R $ b $ k '< t7 - Y :7 > ï ï * 9 M O S Field Effect Power Transistor 2SK681 MOS F E T 2SK 681Ü , N f - - v ^ . ; H i^ > 'f I7 - M 0 S t i i z «t i m ^c7 K 7 # x a 7 f > / FETT, f v q x ¥ i i : mm) 5 V'ffiiH*IC<7)


    OCR Scan     		PDF 2SK681 transistor jsx 2SK681 ipw fet s0822 t460 transistor

    diode sy 200

    Abstract: No abstract text available
    Text: »E|t,4E?SaS □□IflflTS 2 | E C ELECTRONICS INC 7 ^ 3 or N-CHANNEL M O S FIELD EFFECT POWER TRANSISTOR 2SK699 D E S C R IP T IO N The 2 SK 699 is N-Channel M OS Field Effect Power Tran ­ P A C K A G E D IM EN SIO N S sistor designed for solenoid, motor and lamp driver.


    OCR Scan     		PDF 2SK699 diode sy 200

    Untitled

    Abstract: No abstract text available
    Text: 6427525 N E C N E C ELECTRONICS INC 98 D E LE CTRONICS INC 18865 D T -Z S -ir g IbME7SES DDlflflbS S i^Ï-V B B fW B a s rg a a B g » ? -* MOS FIELD EFFECT POWER TRANSISTOR 2SK680 FAST SWITCHING N-CHANNEL SILICON POWER MOS FET F E A TU R ES PACKAG E D IM E N S IO N S


    OCR Scan     		PDF 2SK680 1986M

    sony 0642

    Abstract: No abstract text available
    Text: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron


    OCR Scan     		PDF 2SK677H5 2SK677H5 D0G312b sony 0642

    2SK659

    Abstract: 0118G xk30
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK659 The 2SK659 is N-Channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r solenoid, m o to r and lamp driver. In m illim eters inches FEATURES • 4 V Gate Drive — Logic level —


    OCR Scan     		PDF 2SK659 2SK659 RS39726 1986M 0118G xk30

    C947

    Abstract: NF 022 NEC IEI-620 2SK680A T460 TC-7831A transistor NEC K 946
    Text: Mos M O S Field E ffe c t T ran sis to r 2SK680A MOS F E T 2SK680A i, N ^ ^ / H IO ^ M O S iz x £ F E T T ', -y f> fs < , ^ < n K y # m m o j i à t i r ^ ò X ^ i ò , * (W 5 V ?1 3 U C Ì • mm Tto - ? , 7 ? 1.5 ±0.1 A tr o f à j - y f à t r Ì ' C t o


    OCR Scan     		PDF 2SK680A 484SiJ! C947 NF 022 NEC IEI-620 2SK680A T460 TC-7831A transistor NEC K 946

    tc6105

    Abstract: 2SK679 BH rn transistor 10285 TC-6105
    Text: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8


    OCR Scan     		PDF 2SK679 2SK679Ã TC-6105 tc6105 2SK679 BH rn transistor 10285

    2SK680

    Abstract: a006 transistor transistor A006 tc6106
    Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK680 FAST SW ITCHING N-CHANNEL SILICON POWER MOS FET FEATURES PACKAGE DIM ENSIONS • Suitable fo r switching power supplies, actuater controls, and in m illim e te rs pulse circuits 4.5 ± 0 .1


    OCR Scan     		PDF 2SK680 2SK680 a006 transistor transistor A006 tc6106

    s0246

    Abstract: transistor et 454 TRANSISTOR BJ 131 transistor BJ 932 2SK681A T108 T210 T460 945-X bj 945
    Text: MOS M O S Field E ffe c t T ran sis to r 2SK681A MOS F E T 2SK681A i , F E T T", 5 V m ^ I C c O ^ ^ j x 4 >y j - > w X X 't o b e mm i 1.2 7 .0 M A X p T r t c ^ ü if# T - t o 0 . 8 ± 0.1 i t o iS ^ - v iÊ iÆ 0 4 T - t 'o 0 . 6 + 0 .1 R DS(on)=0.7 Q (M A X .)


    OCR Scan     		PDF 2SK681A IEI-620) S5TI48 s0246 transistor et 454 TRANSISTOR BJ 131 transistor BJ 932 2SK681A T108 T210 T460 945-X bj 945