2SK657
Abstract: SC-71
Text: Silicon MOS FETs Small Signal 2SK657 Silicon N-Channel MOS FET For switching unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 0.85 Ratings 50 8 ±100 ±200 400 150 −55 to +150 Symbol VDSS VGSO ID IDP PD Tch Tstg Unit V V mA mA mW °C °C 3 2 2.5 0.45±0.05
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2SK657
2SK657
SC-71
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2SK0657
Abstract: 2SK657 SC-71
Text: Silicon MOS FETs Small Signal 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 2.5±0.1 6.9±0.1 (1.0) 4.1±0.2 2.4±0.2 1.0±0.1 R 0.7 2.0±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2SK0657
2SK657)
2SK0657
2SK657
SC-71
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2SK0657
Abstract: 2SK657 SC-71
Text: Silicon MOS FETs Small Signal 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 2.5±0.1 6.9±0.1 (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 ● High-speed switching ● M type package, allowing easy automatic and manual insertion as
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2SK0657
2SK657)
2SK0657
2SK657
SC-71
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Untitled
Abstract: No abstract text available
Text: 2SK657 Silicon MOS FETs Small Signal 2SK657 Silicon N-Channel MOS Unit : mm For switching 6.9±0.1 ing to printed circuits board. 1.0 0.85 4.5±0.1 Easy automatic- /manual-insertion due to M type package. Self-fix- 4.1±0.2 ● 7 High-speed switching 1.0
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2SK657
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Untitled
Abstract: No abstract text available
Text: Silicon MOS FETs Small Signal 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 2.5±0.1 6.9±0.1 (1.0) 3.5±0.1 ● High-speed switching ● M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
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2SK0657
2SK657)
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2SK657
Abstract: 2SK0657 SC-71
Text: Silicon MOS FETs Small Signal 2SK0657 (2SK657) Silicon N-Channel MOS FET unit: mm For switching 6.9±0.1 1.0 0.85 4.5±0.1 4.1±0.2 1.0±0.1 ● High-speed switching ● M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
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2SK0657
2SK657)
2SK657
2SK0657
SC-71
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SSSMini3-F1 transistor
Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Text: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)
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2SK0601
2SK614)
2SK664)
2SK665)
2SK1228
2SK1374
2SK3539
2SK3546J
2SK3547
2SK2211
SSSMini3-F1 transistor
2SK0664
2sk60
2SK0601
2SK0614
2SK0615
2SK0655
2SK0656
2SK601
2SK614
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2SK653
Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
Text: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s
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2SK648
2SK649
2SK650
2SK651
150ni
2SK652
2SK665
50MHz
2SK666
2SK765
2SK653
2SK671
Gv-80dB
2SK674
2SK669
2SK677
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2SK1216
Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK1216
3SK139
FETs Field Effect Transistors
3SK268
3SK269
3SK192
2SK374
3SK286
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2sk to-92
Abstract: No abstract text available
Text: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80
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2SK601
2SK614
2SK615
2SK620
A2SK2276
A2SK2342
2sk to-92
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2SK620
Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK620
3SK268
3SK269
3SK286
CAMERA MOS
2SJ164
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Untitled
Abstract: No abstract text available
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type
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2SJ0385
A2SK2380
2SK1103
2SJ364
2SJ163
2SK662
2SK198
2SK663
2SK374
2SK123
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2SK2276
Abstract: 2sk227
Text: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40
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2SK601
2SK614
2SK615
2SK620
2SK2276
2SK2277
2SK2342
2SK2474
2SK2495
A2SK2660
2SK2276
2sk227
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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