2SK87 Search Results

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Toshiba America Electronic Components 2SK879-Y(TE85L,F) JFET N-CH 0.1W USM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK879-Y(TE85L,F)	Digi-Reel	19,865		1	1 $0.65 10 $0.4 100 $0.65 1000 $0.17448 10000 $0.17448	Buy Now
	2SK879-Y(TE85L,F)	Cut Tape	19,865		1	1 $0.65 10 $0.4 100 $0.65 1000 $0.17448 10000 $0.17448	Buy Now
	2SK879-Y(TE85L,F)	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.11375	Buy Now
Mouser Electronics	2SK879-Y(TE85L,F)		6,819			1 $0.55 10 $0.358 100 $0.237 1000 $0.165 10000 $0.113	Buy Now
Chip One Stop	2SK879-Y(TE85L,F)	Cut Tape	4,781			1 - 10 $0.432 100 $0.234 1000 $0.153 10000 $0.108	Buy Now
EBV Elektronik	2SK879-Y(TE85L,F)			25 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SK879-GR(TE85L,F) JFET N-CH USM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK879-GR(TE85L,F)	Cut Tape	1,360		1	1 $0.65 10 $0.4 100 $0.65 1000 $0.17448 10000 $0.17448	Buy Now
	2SK879-GR(TE85L,F)	Digi-Reel	1,360		1	1 $0.65 10 $0.4 100 $0.65 1000 $0.17448 10000 $0.17448	Buy Now
	2SK879-GR(TE85L,F)	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.14905	Buy Now
Mouser Electronics	2SK879-GR(TE85L,F)		3,650			1 $0.55 10 $0.358 100 $0.237 1000 $0.165 10000 $0.115	Buy Now
Newark	2SK879-GR(TE85L,F)	Cut Tape	2,970		5	1 $0.505 10 $0.388 100 $0.228 1000 $0.134 10000 $0.134	Buy Now
Avnet Asia	2SK879-GR(TE85L,F)			24 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	2SK879-GR(TE85L,F)	Cut Tape	2,705			1 - 10 $0.432 100 $0.202 1000 $0.143 10000 $0.143	Buy Now
Toshiba America Electronic Components 2SK879-GR(TE85R)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK879-GR(TE85R)		1,139			1 $0.515 10 $0.515 100 $0.515 1000 $0.206 10000 $0.206	Buy Now

2SK87 Datasheets (53)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK87	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SK87	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK870	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK870	Unknown	FET Data Book	Scan	PDF
2SK870	Panasonic	Silicon N-Channel Power F-MOS FET	Scan	PDF
2SK871	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK871	Unknown	FET Data Book	Scan	PDF
2SK871	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SK872	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK872	Unknown	FET Data Book	Scan	PDF
2SK873	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK873	Unknown	FET Data Book	Scan	PDF
2SK874	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK874	Unknown	FET Data Book	Scan	PDF

2SK875	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK875	Unknown	FET Data Book	Scan	PDF
2SK876	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK876	Unknown	FET Data Book	Scan	PDF
2SK879	Toshiba	N-Channel MOSFET	Original	PDF
2SK879	Unknown	FET Data Book	Scan	PDF

2SK87 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	2SK879	PDF
condenser microphone Abstract: 2SK879 Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	2SK879 condenser microphone 2SK879	PDF
Untitled Abstract: No abstract text available Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	2SK879	PDF
Untitled Abstract: No abstract text available Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	2SK879 SC-70	PDF
2SK879 Abstract: No abstract text available Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	2SK879 2SK879	PDF
2SK879 Abstract: No abstract text available Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)	Original	2SK879 2SK879	PDF
Untitled Abstract: No abstract text available Text: 2SK878-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V)-3.5 I(D) Max. (A)100m P(D) Max. (W)340m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.37m	Original	2SK878-2	PDF
2SK816 Abstract: 2sk895 2SK872 2SK875 2SK882 2SK896 2SK928 2SK880 2SK897 2SK900 Text: - 74 - € m. % tt m « 'M m & ft ^ £ P d /P c h * K V E # * (V) £ * (A) % S fë fr * (W) Igss (max) (A) Vg s (V) ft ft (min) (max) Vps (A) (A) (V) i± (min) (max) Vd s (V) (V) (V) (Ta=Z5cC) (min) (typ) Vd s (S) (S) (V) ÏD (A) Id (A) 2SK872 NEC sw MOS	OCR Scan	2SK872 2SK873 2SK874 2SK875 2SK876 100ns, 520nstyp 2SK901 310ns, 1550nstyp 2SK816 2sk895 2SK882 2SK896 2SK928 2SK880 2SK897 2SK900	PDF
2SK876 Abstract: No abstract text available Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION " 2SK876 The 2SK876 is N-channel MOS Field Effect Power Transistor PACKAGE DIM EN SIO N S designed for switching power supplies, DC-DC converters. FEATURES • in millimeters inches	OCR Scan	2SK876 2SK876 1987M	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 9 <; K R 7 Q GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS Unit in mm 2.1 ± 0.1 1.25 + 0.1 • • High Breakdown Voltage : Vq/d s = —50V TTicrVi T n m i t T mr>pr l»nr»p	OCR Scan	2SK879 --50V IE30VÏ 100kn, 120Hz)	PDF
2SK879 Abstract: UFF 100 04 Text: TO SH IB A 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER Unit in mm MICROPHONE APPLICATIONS 2.1 ± 0.1 J • High Breakdown Voltage : V jj g= —50V • High Input Impedance	OCR Scan	2SK879 100kn, 120Hz) SC-70 UFF 100 04	PDF
2SK875 Abstract: 2SK875A Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK875 The 2SK875 is N-channel MOS Field E ffe ct Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies DC-DC converters. FEATURES • in m illim e te rs inches	OCR Scan	2SK875 2SK875 1987M 2SK875A	PDF
2SK871 Abstract: 2SK87 2sk8 Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION I 2SK871 The 2SK871 is N-channel MOS Field E ffect Power Transis PACKAGE DIMENSIONS to r designed fo r switching powersupplies DC-DC converters. FEATURES in m illim eters inches	OCR Scan	2SK871 2SK871 1987M 2SK87 2sk8	PDF
2SK872 Abstract: No abstract text available Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE D E S C R IP T IO N 2SK872 The 2S K 87 2 is N-channel MOS Field E ffect Power Transistor P A C K A G E D IM E N S IO N S designed fo r switching power supplies, DC-DC converters. FEATURES •	OCR Scan	2SK872 2SK872 1987M	PDF

2SK879 Abstract: a63m Text: TO SH IBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 2.1 ±0.1 1.25 ± 0.1 • • • High Breakdown Voltage : V q d § = —50V High Input Impedance : lQ gg= —l.OnA Max. (VQg= —30V)	OCR Scan	2SK879 120Hz) SC-70 2SK879 a63m	PDF
2SK87 Abstract: No abstract text available Text: SILICON N CHANNEL JUNCTION TYPE 2SK879 Unit in mm G E N E R A L PURPOSE AND IM PEDANCE CONVERTER 2 . 1+ 0.1 AND CONDEN SER MICROPHONE A P P L I C A T I O N S . 1.2 5±0.1 • High Breakdown Voltage: • High Input Impedance: s VGDS 50V IG gg=-1.0nA Max.	OCR Scan	2SK879 100kfi, 120Hz) SC-70 120Hz 2SK87	PDF
2SK872 Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717 Text: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm s'i^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss	OCR Scan	2SK872 2SK872 IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717	PDF
2SK876 Abstract: No abstract text available Text: M O S Field E ffe c t P o w e r T ra n s is to r N ft^ l/M ° 7 -M O S i 2SK876 i, x 'f D C -D C # mm h f f ^ ' 0l7 - M O S x - t > ffiK & i & <, FET « [ 2 FE T ] ( T O : mm f- > 7 * # l t t fc •;, S5f] iS x -i 3 > /< — 9 C f i t ' t o i t °V d s s	OCR Scan	2SK876 2SK876Ã 2SK876	PDF
TC-6300 Abstract: 2SK873 miw dc-dc tc6300 Voscm-20 Text: M O S Field Effect Pow er Transistor 2SK873 N f t ^ ^ - M O S FET xmm 2SK873 Ü , •c * > K < , x ^ 7 f > n i i i ; - M OS F E T t i T is d , ¡a s Jf x W & E I T O ! mm -i ■y-f > r-.iiri?;, D C -D C n > ✓ * -? t’ i i i S T 't o & f t °V dss	OCR Scan	2SK873 TC-6300 2SK873 miw dc-dc tc6300 Voscm-20	PDF
2SK870 Abstract: s1,3/2iv SC-65 Text: P o w er F-MOS FET 2SK870 2SK870 Silicon N-channel Power F-M O S FET Package Dimensions • Features • Low ON re sistan c e RDs on : R DS (on) = 0 .2 3 il (ty p .) • High switching ra te : tf= 140ns (typ.) • No secondary breakdow n Unit: mm 15.5m ax	OCR Scan	2SK870 140ns bT3Sfl52 2SK870 s1,3/2iv SC-65	PDF
2SK873 Abstract: No abstract text available Text: NEC N-CHANNEL M O S FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK873 The 2SK873 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies, DC-DC converters. FEATURES • in m illim eters inches	OCR Scan	2SK873 2SK873 1987M	PDF
2SK870 Abstract: SC-65 Text: P ow er F-M O S F E T 2SK870 2SK870 Silicon N-channel Power F-M O S F E T • Package Dimensions ■ Features • Low ON resistan ce RDs on : R ds (on) = 0 .2 3 f i (ty p .) • High switching rate : tf = 140ns (typ.) • No secondary breakdown • High breakdown voltage, large power	OCR Scan	2SK870 140ns Q0171ia 2SK870 SC-65	PDF
2SK879 Abstract: NA IJ5 Text: TOSHIBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS Unit in mm 2.1 ± 0 .1 1.25 ± 0.1 • High Breakdown Voltage : V q d § = —50V • High Input Impedance	OCR Scan	2SK879 100kil, 120Hz) SC-70 2SK879 NA IJ5	PDF
2SK871 Abstract: 2SK87 Text: M O S B W f f - $ ] ^ s < r7 M O S Field Effect Pow er Transistor • /\°7 - M O S fe t if f f l 2SK871 i±, V t • ^ > ' ^ X / > hM^or7- MOS FET > f S Ì/ ljH S < , x -1“ V - f > 9 , 4 f t m m ¥ f ì : mm >'/ 0 3.2 + 0.2 f- > ^ S ïl, DC-DC a >s<- ? fcflüi tM".	OCR Scan	2SK871 O00000 2SK871 2SK87	PDF

2SK87 Search Results

2SK87 Price and Stock

Toshiba America Electronic Components 2SK879-Y(TE85L,F)

Toshiba America Electronic Components 2SK879-GR(TE85L,F)

Toshiba America Electronic Components 2SK879-GR(TE85R)

2SK87 Datasheets (53)

2SK87 Datasheets Context Search

Untitled

condenser microphone

Untitled

Untitled

2SK879

2SK879

Untitled

2SK816

2SK876

Untitled

2SK879

2SK875

2SK871

2SK872

2SK879

2SK87

2SK872

2SK876

TC-6300

2SK870

2SK873

2SK870

2SK879

2SK871