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    Catalog Datasheet MFG & Type Document Tags PDF

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    Text: Power F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance Rds on : RDs (on) l = 0.08il (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving (VGs = 4V)


    OCR Scan     		2SK1266 180ns 2SKi266 PDF