AM29LV004T
Abstract: EDI7F33512V
Text: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F33512V
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29LV004T
512Kx8
EDI7F33512V
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WS1M8-XXX 2x512Kx8 DUALITHIC SRAM FEATURES Access Times 17, 20, 25, 35, 45, 55ns Organized as two banks of 512Kx8 Revolutionary, Center Power/Ground Pinout Commercial, Industrial and Military Temperature Ranges Packaging: 5 Volt Power Supply
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2x512Kx8
512Kx8
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PDF
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Untitled
Abstract: No abstract text available
Text: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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Original
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EDI7F33512V
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29LV004T
512Kx8
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Untitled
Abstract: No abstract text available
Text: EDI7F33512C White Electronic Designs 512Kx32 FLASH FIG.1 BLOCK DIAGRAMS The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are
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Original
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EDI7F33512C
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
512Kx8
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PDF
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AM290F040
Abstract: No abstract text available
Text: White Electronic Designs EDI7F33512C 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM290F040 Flash Device Fast Read Access Time - 80-150ns 5V Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each
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512Kx32
512Kx32,
2x512Kx32
4x512Kx32
AM290F040
80-150ns
EDI7F433512C80BNC
EDI7F433512C90BNC
EDI7F433512C100BNC
EDI7F433512C120BNC
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WS1M8V-XCX ADVANCED* 2x512Kx8 DUALITHIC SRAM FEATURES • Access Times 17, 20, 25, 35, 45, 55ns ■ Evolutionary, Corner Power/Ground Pinout ■ PIN CONFIGURATION FOR WS1M8V-XCX 32 DIP TOP VIEW Packaging: • 32 pin, Hermetic Ceramic DIP Package 300
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2x512Kx8
512Kx8
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PDF
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Untitled
Abstract: No abstract text available
Text: WS1M8V-XCX 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • Access Times 17, 20, 25, 35, 45, 55ns ■ Evolutionary, Corner Power/Ground Pinout 32 DIP TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25
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2x512Kx8
512Kx8
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PDF
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WS1M8-XCX PRELIMINARY* 2x512Kx8 DUALITHIC SRAM FEATURES Access Times 70, 85, 100ns Evolutionary, Corner Power/Ground Pinout Packaging: • 32 pin, Hermetic Ceramic DIP Package 300 Organized as two banks of 512Kx8 Commercial, Industrial and Military Temperature
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2x512Kx8
100ns
512Kx8
A0-18
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PDF
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512k x 8 chip block diagram
Abstract: AMD 705 AM29LV004T EDI7F33512V
Text: White Electronic Designs EDI7F33512V 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and
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EDI7F33512V
512Kx32
512Kx32,
2x512Kx32
4x512Kx32
AM29LV004T
16Kbyte,
32Kbyte
64Kbyte
EDI7F33512,
512k x 8 chip block diagram
AMD 705
EDI7F33512V
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Untitled
Abstract: No abstract text available
Text: FTS1MX8-XXX 1MX8 organised 2x512Kx8 SRAM FEATURES Access Times 17, 20, 25, 35, 45, 55ns Organised as two banks of 512Kx8 Revolutionary, Center Power/Ground Pinout Commercial, Industrial and Military Temperature Ranges Packaging: 5 Volt Power Supply
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Original
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2x512Kx8
512Kx8
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PDF
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Untitled
Abstract: No abstract text available
Text: WS1M8-XCX White Electronic Designs PRELIMINARY* 2x512Kx8 DUALITHIC SRAM FEATURES Access Times 70, 85, 100ns Evolutionary, Corner Power/Ground Pinout Packaging: • 32 pin, Hermetic Ceramic DIP Package 300 Organized as two banks of 512Kx8
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2x512Kx8
100ns
512Kx8
A0-18
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PDF
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Untitled
Abstract: No abstract text available
Text: MI TSUBI SHI M E M O R Y C A R D D YN A MI C RAM CARDS MF12M1-L57ATXX 1x512/fx32i&/i D R A M Card MF14M1-L57ATXX 2x512/^x326/7 D R A M Card Connector Type T w o - p ie c e 8 8 -p i n y I Extend DESCRIPTION These DRAM CARDs JEIDA DRAM are developed ba s e d
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OCR Scan
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1x512/fx32i
2x512/
x326/7
MF12M1-L57ATXX
MF14M1-L57ATXX
iNote23)
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PDF
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AM29LV004T
Abstract: EDI7F33512V eco 9230
Text: EDI7F33512V SEDI, 512Kx32 Flash ELECTRONIC DESIGNS, IN C I 512Kx32 Flash Block Diagrams The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in
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OCR Scan
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EDI7F33512V
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29LV004T
EDI7F33512V
eco 9230
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PDF
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WA126
Abstract: GA-311
Text: ^ E D EDI9F81025C I e le c tro n s : designs, n c .1 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory
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OCR Scan
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EDI9F81025C
2x512Kx8
100ns
EDI9F81025LP)
EDI9F81025C
512Kx8
WA126
GA-311
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PDF
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mz70
Abstract: No abstract text available
Text: EDI9F81025C ^ E D I ELECTRONC œ SIG N a N C I 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory
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OCR Scan
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EDI9F81025C
2x512Kx8
EDI9F81025C
100ns
EDI9F81025LP)
512Kx8
mz70
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PDF
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Untitled
Abstract: No abstract text available
Text: WDÍ EDI9F81025C ELECTRONIC DESIGNS INC. • Surface Mount Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS Module , Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi layered epoxy laminate FR4 substrate.
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OCR Scan
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EDI9F81025C
2x512Kx8
EDI9F81025C
512Kx8
100ns.
EDI9F81025LP,
EDI9F81025LP70BPC
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PDF
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Untitled
Abstract: No abstract text available
Text: WS1M8-XXX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES • A c c e s s T i m e s 17, 20, 25, 35, 45, 5 5 n s ■ R e v o lu tio n a r y , C e n t e r P o w e r / G r o u n d P in o u t ■ P a c k a g in g : ■ C o m m e r c i a l , In d u s tr ia l and M i l i t a r y T e m p e r a t u r e R a ng e s
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OCR Scan
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2x512Kx8
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PDF
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Untitled
Abstract: No abstract text available
Text: WHITE M IC R O E L E C T R O N IC S 2x512Kx32 5V FLASH SIM M WPF1M32A-90PSC5 PRELIMINARY* FEATURES • A ccess Tim e o f 90ns ■ ■ Packaging: ■ Organized as tw o banks o f 512Kx32 • 80-pin S IM M ■ C om m ercial T e m pe ratu re Range • The m odule is m a nufa cture d w ith e ig h t 512Kx8 CMOS
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OCR Scan
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2x512Kx32
WPF1M32A-90PSC5
512Kx32
80-pin
512Kx8
DDG1S40
1M32A
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PDF
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Untitled
Abstract: No abstract text available
Text: 77 WS1M8V-XCX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • 32 DIP TOP VIEW A 18E 1 ^ 31 □ A15 A12C 4 A 7C 5 29 □ WE E E A4 E A3 E A2 E A1 E AO E 28 □ A13 A6 6 27 □ A8 7 26 □ A9 GND
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OCR Scan
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2x512Kx8
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PDF
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332 Ic 8 pin
Abstract: 4X512K ic 331
Text: ^EDI E D I7F33S 12C 512Kx32 Flash EL£CTRONC CESGN& M C I Features 512Kx32 Flash Module 2,4,8 megabyte CMOS Flash Module Family Organization: 512Kx32 2x512Kx32 4x512Kx32 Fast Read Access Time-80ns Five Volt Only Reprogramming Internal Program Control and Timer
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OCR Scan
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512Kx32
2x512Kx32
4x512Kx32
Time-80ns
I7F33S
2x512Kx32
4x512Kx32
EDI7F33512CRev
332 Ic 8 pin
4X512K
ic 331
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PDF
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EDI9F81025C100BPC
Abstract: EDI9F81025C70BPC EDI9F81025C85BPC EDI9F81025LP70BPC
Text: WDI EDI9F81025C ELECTRONIC DESIGNS INC. . High Speed Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.
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OCR Scan
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EDI9F81025C
2x512Kx8
EDI9F81025C
512Kx8
100ns.
EDI9F81025LP,
EDI9F81025C100BPC
EDI9F81025C70BPC
EDI9F81025C85BPC
EDI9F81025LP70BPC
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PDF
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367 al
Abstract: CQ31 9020 11 ak 30 a4 51b7 Amos Flash SIMM 80 AM29F040 EDI7F33512C
Text: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams
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OCR Scan
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EDI7F33512C
512KX32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
367 al
CQ31
9020
11 ak 30 a4
51b7
Amos
Flash SIMM 80
EDI7F33512C
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PDF
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PD2743
Abstract: WPF1M32A-90PSC5 80pin-SIMM AO523
Text: I/VHITE M IC R O E L E C T R O N IC S 2x512Kx32 5V FLASH S IM M WPF1M32A-90PSC5 P R E L IM IN A R Y * FEATURES • Access Time of 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as two banks of 512Kx32 • 80-pin S IM M ■ Commercial Temperature Range
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OCR Scan
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WPF1M32A-90PSC5
2x512Kx32
80-pin
512Kx8
64KBytes
Am29F040-90
512Kx32
foPF1M32A-90PSC5
80-PINSIMM
PD2743
WPF1M32A-90PSC5
80pin-SIMM
AO523
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PDF
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Q180
Abstract: No abstract text available
Text: MITSUBISHI MEMORY CARD D YN A M IC RAM CARDS M F14M 1-J57A TXX 2x512Kx32bit D R A M Card Connector Type T w o -p iece 88-pin DESCRIPTION These D R A M C A R D s have been developed based on J E I D A D R A M C A R D G U I D E L I N E V e r . 2.1. T hese c a rd s a re m a d e u s in g in d u s t r y s t a n d a r d 512K
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OCR Scan
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2x512Kx32bit
1-J57A
88-pin
88pin
Q180
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PDF
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