Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY
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PHPT61003NY
OT669
LFPAK56)
PHPT61003PY
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type MOS Field Effect Transistor KPA2790GR Features Low on-state resistance N-channel RDS on 1 = 28 m MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m MAX. (VGS = -10 V, ID = -3 A)
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KPA2790GR
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS5260QA
DFN1010D-3
OT1215)
PBSS4260QA.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS5230QA
DFN1010D-3
OT1215)
PBSS4230QA.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS5130QA
DFN1010D-3
OT1215)
PBSS4130QA.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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Original
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PBSS4260QA
DFN1010D-3
OT1215)
PBSS5260QA.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4230QA 30 V, 2 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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Original
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PBSS4230QA
DFN1010D-3
OT1215)
PBSS5230QA.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4160QA 60 V, 1 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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PBSS4160QA
DFN1010D-3
OT1215)
PBSS5160QA.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5160QA 60 V, 1 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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Original
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PBSS5160QA
DFN1010D-3
OT1215)
PBSS4160QA.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4130QA 30 V, 1 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
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Original
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PBSS4130QA
DFN1010D-3
OT1215)
PBSS5130QA.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N2 020 D-3 PBSS5330PAS 30 V, 3 A PNP low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
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PBSS5330PAS
DFN2020D-3
OT1061D)
PBSS4330PAS
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N2 020 D-3 PBSS4330PAS 30 V, 3 A NPN low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
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PBSS4330PAS
DFN2020D-3
OT1061D)
PBSS5330PAS
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PDF
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transistor smd wz
Abstract: No abstract text available
Text: SO T8 83 NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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NX7002BKM
DFN1006-3
OT883)
transistor smd wz
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV45EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV45EN2
O-236AB)
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PDF
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2n06l05
Abstract: 2N06L SPI80N06S2L-05 ANPS071E SPB80N06S2L-05 SPP80N06S2L-05
Text: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.5 mΩ ID 80 A • Logic Level • Avalanche rated P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1
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SPI80N06S2L-05
SPP80N06S2L-05
SPB80N06S2L-05
SPP80N06S2L-05
Q67040-S4246
Q67040-S4256
2N06L05
Q67060-S7422
2n06l05
2N06L
SPI80N06S2L-05
ANPS071E
SPB80N06S2L-05
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PDF
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3pn0403
Abstract: IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E
Text: IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 2.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1
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IPB100N04S3-03
IPI100N04S3-03,
IPP100N04S3-03
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
3PN0403
IPI100N04S3-03
3pn0403
IPB100N04S3-03
IPP100N04S3-03
IPI100N04S3-03
PG-TO263-3-2
Application Note ANPS071E
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PDF
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4p03L11
Abstract: 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03
Text: IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 10.8 mΩ ID -45 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1
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IPB45P03P4L-11
IPI45P03P4L-11,
IPP45P03P4L-11
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
4P03L11
IPI45P03P4L-11
4p03L11
4p03l
DIODE smd marking Ag
IPB45P03P4L-11
IPI45P03P4L-11
IPP45P03P4L-11
PG-TO263-3-2
4p03
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4P04L03
Abstract: IPP120P04P4L-03 IPB120P04P4L-03
Text: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1
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IPB120P04P4L-03
IPI120P04P4L-03,
IPP120P04P4L-03
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
IPI120P04P4L-03
4P04L03
IPP120P04P4L-03
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PDF
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ANPS071E
Abstract: SPB100N04S2L-03 SPP100N04S2L-03 PN04L03
Text: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3 mΩ • Logic Level ID 100 • 175°C operating temperature P- TO263 -3-2 A P- TO220 -3-1 • Avalanche rated
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Original
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SPP100N04S2L-03
SPB100N04S2L-03
SPP100N04S2L-03
Q67060-S6038
PN04L03
SPB100N04S2L-03
Q67060-S6039
BSPP100N04S2L-03
BSPB100N04S2L-03,
ANPS071E
PN04L03
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PDF
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SMD-2520
Abstract: 3N10L smd diode 104
Text: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 12 mW ID 70 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified
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Original
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IPB70N10S3L-12
IPI70N10S3L-12,
IPP70N10S3L-12
PG-TO262-3-1
PG-TO263-3-2
PG-TO220-3-1
IPI70N10S3L-12
SMD-2520
3N10L
smd diode 104
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PDF
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ANPS071E
Abstract: SPB100N04S2L-03 SPP100N04S2L-03
Text: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level V 3 mΩ 100 P- TO263 -3-2 • 175°C operating temperature 40 A P- TO220 -3-1 • Avalanche rated
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Original
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SPP100N04S2L-03
SPB100N04S2L-03
SPP100N04S2L-03
Q67060-S6038
SPB100N04S2L-03
Q67060-S6039
PN04L03
BSPP100N04S2L-03
BSPB100N04S2L-03,
ANPS071E
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PDF
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4P03L07
Abstract: smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse
Text: IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 6.9 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1
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IPB80P03P4L-07
IPI80P03P4L-07,
IPP80P03P4L-07
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
4P03L07
IPI80P03P4L-07
4P03L07
smd diode UM 07
DIODE smd marking Ag
4p03
4p03l
IPB80P03P4L-07
IPI80P03P4L-07
IPP80P03P4L-07
PG-TO263-3-2
optimos battery protection reverse
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PDF
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6 pin TRANSISTOR SMD CODE PA
Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol
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OCR Scan
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BUZ22SMD
q67042-s4139
DsJ14
6 pin TRANSISTOR SMD CODE PA
BUZ22
smd code buz
smd rgs
BUZ22 SMD
BUZ22SMD
Diode smd code sm
PH smd transistor PH
smd transistor A7J
TRANSISTOR SMD XD
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PDF
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transistor smd MJ 145
Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
Text: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter
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OCR Scan
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q67042-s4131
np-60
transistor smd MJ 145
d 132 smd code diode
d 132 smd diode
qd SMD
SMD TRANSISTOR qd
BUZ31
smd rgs
smd diode 145
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PDF
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