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    3 W RF POWER TRANSISTOR 2.7 GHZ Search Results

    3 W RF POWER TRANSISTOR 2.7 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3 W RF POWER TRANSISTOR 2.7 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MAGX-002731-100L00 Production V1 23 Aug 11 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Features •       GaN depletion mode HEMT microwave transistor Common source configuration


    Original     		PDF MAGX-002731-100L00 500us MAGX-002731-100L00

    MAGX-002731-100L00

    Abstract: GaN hemt
    Text: MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration


    Original     		PDF MAGX-002731-100L00 500us MAGX-002731-100L00 GaN hemt

    MAGX-002731-030L00

    Abstract: MAGX-002731-030
    Text: MAGX-002731-030L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration


    Original     		PDF MAGX-002731-030L00 500us MAGX-002731-030L00 MAGX-002731-030

    smd transistor 6g

    Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
    Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Functional Schematic Features •         Rev. V2 GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications


    Original     		PDF MAGX-000035-09000P 14-Lead MAGX-000035-09000P

    EAR99

    Abstract: MAGX-002731-180L00
    Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V1 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-002731-180L00 300us EAR99 300us, 500us, MAGX-002731-180L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V2 26 Oct 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-002731-180L00 300us EAR99 300us,

    MAGX-000035-09000P

    Abstract: No abstract text available
    Text: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Features •         GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications 50 V Typical Bias, Class AB Common-Source Configuration


    Original     		PDF MAGX-000035-09000P 14-Lead MAGX-000035-09000P

    BLS6G2731-120

    Abstract: No abstract text available
    Text: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.


    Original     		PDF BLS6G2731-120; BLS6G2731S-120 BLS6G2731-120 6G2731S-120

    Untitled

    Abstract: No abstract text available
    Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 2 — 4 September 2012 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.


    Original     		PDF BLS6G2735L-30; BLS6G2735LS-30 BLS6G2735L-30 6G2735LS-30

    ROGERS DUROID

    Abstract: BLS6G2735L-30
    Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 — 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.


    Original     		PDF BLS6G2735L-30; BLS6G2735LS-30 BLS6G2735L-30 6G2735LS-30 ROGERS DUROID

    GaN hemt

    Abstract: Gan hemt transistor
    Text: MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Features •       GaN depletion mode HEMT microwave transistor Common source configuration


    Original     		PDF MAGX-002735-040L00 300us MAGX-002735-040L00 GaN hemt Gan hemt transistor

    transistor 975

    Abstract: No abstract text available
    Text: MAGX-000035-01000P GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V1 Features •         GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed / CW Applications 50 V Typical Bias, Class AB


    Original     		PDF MAGX-000035-01000P 14-Lead MAGX-000035-01000P transistor 975

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000035-01000P GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Features •         GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed / CW Applications 50 V Typical Bias, Class AB


    Original     		PDF MAGX-000035-01000P 14-Lead MAGX-000035-01000P

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FS T1G4020036-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FL T1G4020036-FL

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FS T1G4020036-FS

    radar amplifier s-band

    Abstract: radar amplifier s-band 2.7 2.9 GHZ ROGERS DUROID
    Text: BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2731S-130 radar amplifier s-band radar amplifier s-band 2.7 2.9 GHZ ROGERS DUROID

    j358

    Abstract: No abstract text available
    Text: T1G4003532-FS 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G4003532-FS T1G4003532-FS j358

    Untitled

    Abstract: No abstract text available
    Text: BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2731S-130

    bfp640esd

    Abstract: BFP740FESD WiMAX RF Transceiver AN218 BFP540FESD BFP640FESD C166 LQW15A rf transistor 2.5GHz S11-S22
    Text: BFP640ESD Ultra Low Noise Amplifier for 2.5 - 2.7 GHz WLAN & WiMAX A pplications A pplication Note AN218 Revision: Rev. 1.0 2010-06-30 RF and Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF BFP640ESD AN218 20dBm AN218, bfp640esd BFP740FESD WiMAX RF Transceiver AN218 BFP540FESD BFP640FESD C166 LQW15A rf transistor 2.5GHz S11-S22

    Untitled

    Abstract: No abstract text available
    Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 1 — 11 October 2011 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.


    Original     		PDF BLS6G2735L-30; BLS6G2735LS-30 BLS6G2735L-30 6G2735LS-30

    vishay rf output power transistor

    Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100
    Text: T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G4003532-FL T1G4003532-FL vishay rf output power transistor tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100

    transistor 20107

    Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
    Text: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer


    OCR Scan     		PDF SA5200 SA611 SA2420 SA621 SA1620 SA1921 UAA2073 UAA2077AM UAA2077BM UAA2077CM transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier