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    3-PIN 274 TRANSISTOR Search Results

    3-PIN 274 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3-PIN 274 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Integrated Circuit 72741

    Abstract: 100 pf, ATC Chip Capacitor 100A i 72741 philips catalog potentiometer transistor J128 transistor 9567 71005 Philips 2222-030 philips resistor 2322 BLF521
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain


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    PDF BLF521 SC08b MBB072 Integrated Circuit 72741 100 pf, ATC Chip Capacitor 100A i 72741 philips catalog potentiometer transistor J128 transistor 9567 71005 Philips 2222-030 philips resistor 2322 BLF521

    0130 transistor

    Abstract: 72741 71005 Integrated Circuit 72741 BLF521 transistor K 1413
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control ook, halfpage


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    PDF BLF521 MBB072 OT172D 0130 transistor 72741 71005 Integrated Circuit 72741 BLF521 transistor K 1413

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D079 BLF521 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 07 2003 Sep 02 Philips Semiconductors Product specification UHF power MOS transistor BLF521 PIN CONFIGURATION FEATURES • High power gain


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    PDF M3D079 BLF521 MBB072 OT172D SCA75 613524/05/pp14

    Integrated Circuit 72741

    Abstract: philips resistor 2322 712 2322 141 i 72741 BLF521 philips 2322 662 91 MDA482
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D079 BLF521 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 07 2003 Sep 02 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain


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    PDF M3D079 BLF521 MBB072 OT172D SCA75 613524/05/pp14 Integrated Circuit 72741 philips resistor 2322 712 2322 141 i 72741 BLF521 philips 2322 662 91 MDA482

    transistor 9567

    Abstract: transistor J128 philips catalog potentiometer 72741 MDA480 MOS marking 843 D 843 Power Transistor MDA483 transistor K 1413
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control ook, halfpage


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    PDF BLF521 MBB072 BLF521 OT172D 15-Aug-02) transistor 9567 transistor J128 philips catalog potentiometer 72741 MDA480 MOS marking 843 D 843 Power Transistor MDA483 transistor K 1413

    pin configuration of ic TL084

    Abstract: 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note
    Text: IC Testers VPL-AICT LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 Analog IC Tester Transistor Arrays ULN2001 ULN2002 ULN2003 ULN2004 ULN2005 ULN2064 ULN2065 ULN2066 ULN2067 ULN2068 ULN2069 ULN2074 ULN2075 TD62501 TD62502 TD62503 TD62504 TD62505


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    PDF LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 ULN2001 ULN2002 pin configuration of ic TL084 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note

    SLUS495

    Abstract: Weidmu SLUA270A UCC39002 SLUA270 SLUS495D 293D476X9004C2X BC231
    Text: Application Report SLUA270A – July 2002 – Revised February 2003 48-VIN , 12-VOUT Loadshare System Using The UCC39002 With Three dc-to-dc Modules Lisa Dinwoodie System Power ABSTRACT This application note features the UCC39002 BiCMOS 8-pin advanced load share controller


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    PDF SLUA270A 48-VIN 12-VOUT UCC39002 UCC39002 48-VDC 12-VDC SLUS495 Weidmu SLUA270A SLUA270 SLUS495D 293D476X9004C2X BC231

    BLW33

    Abstract: No abstract text available
    Text: i, Una, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television


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    PDF BLW33 OT122A BLW33

    SLUA270

    Abstract: UCC3902 UCC39002 PT4484 PR042A excalibur Board
    Text: Reference Design SLUU137A - October 2002 – Revised February 2003 48-VIN , 5-VOUT Loadshare System Using the UCC39002 With Three PT4484 Excalibur DC/DC Modules PR042A System Power Lisa Dinwoodie ABSTRACT This reference design features the UCC39002 BiCMOS 8-pin advanced load share controller


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    PDF SLUU137A 48-VIN UCC39002 PT4484 PR042A) UCC39002 SLUA270 UCC3902 PR042A excalibur Board

    BLW81

    Abstract: No abstract text available
    Text: -^dnauator Lpioauoti, Unc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the


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    PDF BLW81 BLW81

    RF Transistor 1500 MHZ

    Abstract: No abstract text available
    Text: 2729-170R4 2729-170 170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse


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    PDF 2729-170R4 55KS-1 Ma107 20Mil, 1000pF 10000pF 2200uF RF Transistor 1500 MHZ

    Untitled

    Abstract: No abstract text available
    Text: 0 0,&52(/(&7521,&0$5,1 6$ EM6520 4 bit Microcontroller Features • Low Power • • • • • • • • • • • • • • • • • • - 8 µA active mode, LCD On - 1.1 µA standby mode, LCD Off - 0.1 µA sleep mode @ 3 V, 32 kHz, 25°C Large Voltage range, 2 to 5.5 V


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    PDF EM6520 10-bit B/274 EM6520 B/274 CH-2074

    100000PF

    Abstract: No abstract text available
    Text: 2729-170R3 2729-170 170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse


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    PDF 2729-170R3 55KS-1 20Mil, 1000pF 100000pF 2200uF

    Untitled

    Abstract: No abstract text available
    Text: • b 2 4 c1 3 7 D 0 0 0 7 3 4 0 274 ■ M I T C MH88631 Central Office Interface LS/GS MITEL* Advance Information Features Pin Connections • Transformerless 2W to 4W conversion • Line state detection outputs: - forward current - reverse current - ring ground


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    PDF MH88631 20kfi, GD073SS

    ac 0624 transistor 17-33

    Abstract: No abstract text available
    Text: Philips Semiconductors • b b 5 3 T 31 D D 3QDfib STD H A PX Product specification UHF power MOS transistor BLF521 N AUER PHILIPS/DISCRETE FEATURES b^E 3> ■ PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


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    PDF BLF521 MBB072-! OT172D CA766 ac 0624 transistor 17-33

    transistor 9567

    Abstract: 271 Ceramic Disc Capacitors 72741 i 72741 BLF521 IEC134 JLF521 9567 transistor
    Text: Philips Sem iconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7- 3 1 - 0 7 ' 5bE ]> BLF521 7110â2Li D D M 3 ci3l4 70S • PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


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    PDF BLF521 OT172D OT172D transistor 9567 271 Ceramic Disc Capacitors 72741 i 72741 BLF521 IEC134 JLF521 9567 transistor

    23A33T4

    Abstract: No abstract text available
    Text: CSD1563A CSD1563A NPN PLASTIC POWER TRANSISTOR Complementary CSB1086A Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2 .25 TYP. E F 0.49 0 .75 G 4.5 TYP. L 15.7 TYP. M


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    PDF CSD1563A CSB1086A 100ms 23A33T4

    A210K

    Abstract: mikroelektronik applikation information applikation mikroelektronik INFORMATION MIKROELEKTRONIK APPLIKATION VEB mikroelektronik Mikroelektronik Information Applikation valvo halbleiter mikroelektronik Heft 12 tca730 "halbleiterwerk frankfurt"
    Text: INFORMATION MIKROELEKTRONIK APPLIKATION r INTEGRIERTE LAUTSTÄRKE/BALANCE UND BASS/DISKANTEINSTELL-SCHALTKREISE Illlll Inform ation-A pplikation G leichspannungsgesteuerte NF - S tereo -Einsteilschalt kreise A 2 7 3 D und A 2 7 4 D M ikroelektronik Heft 7


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: COIL CSD1563A CSD1563A NPN PLASTIC POWER TRANSISTOR Complementary CSB1086A Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2 . COLLECTOR 3. BASE DIM MIN. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP. E F 0.49 | 0 .75 G 4.5 TYP. L 15.7 TYP.


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    PDF CSD1563A CSB1086A CSD1563A 100ms

    transistor BF 509

    Abstract: 479S bf diode transistor bf 271 transistors for uhf oscillators bf 107 a transistors bf UHF "AGC Amplifier" BF479 UHF pnp transistor
    Text: CONSUMER TRANSISTORS IF amplifiers @ > o LU U o m and @ ÍD < < O E ai > < I- C3 Q_ @ CL □ a. BF 158 BF 160 BF 167 BF BF BF BF 173 251 271 274 BF 288 BF 454 BF 455 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN »TO-18 epoxy IF amplifier for T V IF amplifier for A M -F M radio


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    PDF T0-18 transistor BF 509 479S bf diode transistor bf 271 transistors for uhf oscillators bf 107 a transistors bf UHF "AGC Amplifier" BF479 UHF pnp transistor

    TRANSISTOR b72

    Abstract: CSB1086A CSD1563A
    Text: CSD1563A CSD1563A N PN PLASTIC POWER TRANSISTOR Complementary CSB1086A Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7 .4 7 .8 B 1 0 .5 1 0 .8 C 2 .4 2 .7 D 0 .7 0 .9 E F 2 .2 5 TYP. 0 .4 9 ] 0 .7 5 G 4 .5 TYP.


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    PDF CSD1563A CSD1563A CSB1086A 100ms TRANSISTOR b72

    IEC134

    Abstract: PLB16008U
    Text: Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL PLB16008U 7 1 IDA2b OOMbMOÔ flflD • PHIN SbE FEATURES DESCRIPTION APPLICATIONS • Input matching cell allows an easier design of circuits


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    PDF FO-229 PLB16008U 71IDA2b IEC134 PLB16008U

    Untitled

    Abstract: No abstract text available
    Text: P h ilip s S e m icon du ctors Prelim inary specification NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL PLB16008U SbE 7110021, OOMbMDÔ flfiO • P H I N FEA T U R E S DESCRIPTION APPLICAT IO N S • Input matching cell allows an


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    PDF PLB16008U FO-229

    1jx130

    Abstract: SD1272 VI-211-17 M135 TRANSISTOR 1300 3B
    Text: •1 a t m RF P ro du cts M ic m m s e m i 140 Com merce Drive Montgomery ville, PA 18936-1013 Tel: 215 631-9840 SD1272 RF & MICROWAVE TRANSISTORS 130i. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 175MHz VOLTAGE 12.5V POWER OUT 25W POWER GAIN 9.2dB


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    PDF 230MHz 175MHz SD1272 SD1272 211/D7-3B 18AWG, S88SU1272-08 24-200pf. 150pt, 1jx130 VI-211-17 M135 TRANSISTOR 1300 3B