Germanium Transistor
Abstract: Germanium power ON5088,115
Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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ON5088
OT343F
JESD625-A
Germanium Transistor
Germanium power
ON5088,115
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transistor marking N1
Abstract: LNB ka band Germanium power
Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU725F/N1
OT343F
JESD625-A
BFU725F
transistor marking N1
LNB ka band
Germanium power
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germanium transistors NPN
Abstract: BFP420F BFP650F GMA marking marking r5s
Text: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology
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BFP650F
BFP650may
germanium transistors NPN
BFP420F
BFP650F
GMA marking
marking r5s
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Untitled
Abstract: No abstract text available
Text: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology
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BFP650F
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TA 8644
Abstract: BFP690 SCT595 GMA marking
Text: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5 For medium power amplifiers Maxim. available Gain Gma = 17 dB at 1.8 GHz 3 Gold metallization for high reliability 2 70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP690
VPW05980
SCT595
200mA
Oct-30-2002
TA 8644
BFP690
SCT595
GMA marking
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Germanium Transistor
Abstract: No abstract text available
Text: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5 For medium power amplifiers Maxim. available Gain Gma = 17 dB at 1.8 GHz 3 Gold metallization for high reliability 2 70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP690
VPW05980
BFP690
Sep-11-2002
Germanium Transistor
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BFP650
Abstract: BGA420 T-25
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology
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BFP650
OT343
BFP650
BGA420
T-25
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RBS 3000
Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology
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BFP650
OT343
RBS 3000
BFP650
BFP650 noise figure
BGA420
T-25
RBS INFINEON
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RBS 3000
Abstract: 1g28
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology
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BFP650
OT343
RBS 3000
1g28
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BF888
Abstract: No abstract text available
Text: BF888 NPN Silicon Germanium RF Transistor • High gain 3 • Low noise figure 2 4 • 150 GHz ft-Silicon Germanium techology 1 • Pb-free RoHS compliant package • Qualified according AEC Q101 Applications • 2nd LNA stage and mixer stage in LNB • 5.8 GHz analog/digital cordless phone
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BF888
OT343
BF888
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60Ghz
Abstract: 60GHz transistor MT4S100T
Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P6 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics
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MT4S100T
60Ghz
60GHz transistor
MT4S100T
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Untitled
Abstract: No abstract text available
Text: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P7 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics
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MT4S101T
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Untitled
Abstract: No abstract text available
Text: MT4S301T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S301T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C
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MT4S301T
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Untitled
Abstract: No abstract text available
Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 High Gain: |S21e| =12.5 dB typ. (@ f=1 GHz) 2 3 3 2 1. BASE 2. EMITTER 3. COLLECTOR R5 1 1 0.7±0.05
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MT3S111TU
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Untitled
Abstract: No abstract text available
Text: MT4S300T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S300T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P3 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C
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MT4S300T
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Untitled
Abstract: No abstract text available
Text: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P8 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics
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MT4S102T
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Untitled
Abstract: No abstract text available
Text: MT4S100U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100U UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 2.1±0.1 2 High Gain:|S21e| =16.0dB @f=2GHz 6 3 0.2 +0.1 –0.05 3 4 1 0～0.1 P Type name 4 Absolute Maximum Ratings (Ta = 25°C)
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MT4S100U
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MT3S113TU
Abstract: No abstract text available
Text: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)
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MT3S113TU
MT3S113TU
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MT4S102U
Abstract: No abstract text available
Text: MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 P 3 4 0.15±0.05 0~0.1 1 0.7 2 +0.05 0.95 –0.15 Marking 0.2+0.1 –0.05 2.0±0.2 2 3 High Gain:|S21e| =15.0dB @f=2GHz
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MT4S102U
MT4S102U
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MT4S200T
Abstract: 5.8ghz
Text: MT4S200T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 High Gain:|S21e|2=11dB @f=5.8GHz Marking 4 2 3 3 0.52±0.05 4 1 0.12±0.05 • 0.8±0.05 Low Noise Figure :NF=1.7dB (@f=5.8GHz)
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MT4S200T
MT4S200T
5.8ghz
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Untitled
Abstract: No abstract text available
Text: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 2 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e| = 12.5dB typ. (@ f=1GHz)
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MT3S113TU
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Untitled
Abstract: No abstract text available
Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05
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MT3S111TU
10led
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germanium transistors NPN
Abstract: mt4s104u TOSHIBA MICROWAVE AMPLIFIER
Text: MT4S104U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 P 3 4 0.15±0.05 0~0.1 1 0.7 2 +0.05 0.95 –0.15 Marking 0.2+0.1 –0.05 2.0±0.2 2 3 High Gain:|S21e| =10.0dB @f=5.2GHz
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MT4S104U
germanium transistors NPN
mt4s104u
TOSHIBA MICROWAVE AMPLIFIER
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germanium transistors NPN
Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
Text: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A
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OCR Scan
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2N2668
MT-27
2N2669
2N2670
2N1042
MT-28
2N1043
germanium transistors NPN
TO13
MT28
Germanium power
2N1044
2N1045
2N2556
2N2557
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