MCH182F104ZK
Abstract: MCH185A100JK MCH185A8R2CK 500 watt amplifier schematic
Text: PRELIMINARY DATA SHEET EC2198 1.5 Watt Power Amplifier Cellular Band 3.5V POWER AMPLIFIER Description Features The EC2198 is a cellular band 820 to 960MHz MMIC power amplifier. It is fabricated with a highly reliable GaAs/InGaP HBT process technology. It operates from
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EC2198
960MHz)
EC2198
900MHz
170mA
EC2198-500
EC2198-1000
SS-000655-000
MCH182F104ZK
MCH185A100JK
MCH185A8R2CK
500 watt amplifier schematic
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AWT6105
Abstract: AWT6105M5
Text: AWT6105 Cellular Dual Mode AMPS/CDMA 3.5V/29dBm Linear Power Amplifier Module Advanced Product Information Rev. 2 V REF V The AWT6105 is a high power, high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC
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AWT6105
V/29dBm
AWT6105
AWT6105M5
AWT6105M5
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HMC477MP86
Abstract: No abstract text available
Text: v00.0603 MICROWAVE CORPORATION HMC477MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC477MP86 is an ideal RF/IF gain block & LO or PA driver for: P1dB Output Power: +15 dBm • Cellular / PCS / 3G
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HMC477MP86
HMC477MP86
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RMPA0950-78
Abstract: power amplifier mmic design high efficiency
Text: R aytheon Commercial E lectronics RMPA0950-78 3.5V Cellular CDMA MMIC Power Amplifier Module Description Features Single supply voltage of +3.5V, nominal Efficiency of 35%, typical, for CDMA average power out of 29 dBm Low cost LCC package Matched input and output module
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RMPA0950-78
RMPA0950
RMPA0950-78
power amplifier mmic design high efficiency
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trw RF POWER TRANSISTOR
Abstract: C33825 trw rf transistor trw 131* RF POWER TRANSISTOR TRW mmic HBT transistor RF2152 TA0032 POUT315 3.5V HBT MMIC Amplifier
Text: TA0032 TA0032 RF2152: A 3V HBT Power Amplifier for CDMA/AMPS Handsets The RF2152 is the latest addition to a family of power amplifiers introduced by RF Micro Devices RFMD utilizing GaAs HBT technology. This commercially proven
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TA0032
RF2152:
RF2152
trw RF POWER TRANSISTOR
C33825
trw rf transistor
trw 131* RF POWER TRANSISTOR
TRW mmic
HBT transistor
TA0032
POUT315
3.5V HBT MMIC Amplifier
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transistor 835
Abstract: HBT transistor TRW mmic RF2152 TA0032 trw rf transistor
Text: TA0032 TA0032 RF2152: A 3V HBT Power Amplifier for CDMA/AMPS Handsets Figure 1: PSSOP-16 Package Outline A high power, high efficiency, low cost power amplifier has been developed utilizing commercial gallium arsenide GaAs heterojunction bipolar transistor (HBT)
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TA0032
RF2152:
PSSOP-16
RF2152
28dBm
27dBm
10dBm
transistor 835
HBT transistor
TRW mmic
TA0032
trw rf transistor
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GSM 300
Abstract: Thomson-CSF semiconductor GMSK gsm Thomson-CSF amplifier athena THOMSON-CSF MICROWAVE TRANSISTORS Thomson-CSF AC52 AN21 AN35
Text: UMS United Monolithic Semiconductors Design of Power Amplifier in GaAs HBT A Company of : EADS Deutschland GmbH THOMSON-CSF UMS United Monolithic Semiconductors Summary: PA market Relevant criteria of PA Available Technologies Advantages of HBT technology
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JUMPER-0603
Abstract: CGB98-900 INFINEON PART MARKING infineon marking L2 MMIC marking 81 TSSOP10 CGB98 C4 MMIC siemens inductor 15PF-0603
Text: GaAs MMIC CGB 98 Preliminary Datasheet * 3-stage GaAs GSM-HBT Power Amplifier *Operating voltage range: 2.7 to 6.0 V * Single supply voltage * Pout = 34.0dBm at Vcc=3.2V
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/GSM900
CGB98
Q62702G09111
P-TSSOP10-2
JUMPER-0603
CGB98-900
INFINEON PART MARKING
infineon marking L2
MMIC marking 81
TSSOP10
CGB98
C4 MMIC
siemens inductor
15PF-0603
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RMPA1750-78
Abstract: RAYTHEON mhz rf amplifier module
Text: R aytheon Commercial E lectronics RMPA1750-78 3.0V CDMA MMIC Power Amplifier Module The RMPA1750-78 is a small outline, high efficiency power amplifier module for Korean PCS CDMA personal communication system applications. The Power Amplifier module is internally matched to 50 ohms which minimizes
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RMPA1750-78
RMPA1750-78
RAYTHEON
mhz rf amplifier module
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RAYTHEON
Abstract: RMPA1950-78
Text: R aytheon Commercial E lectronics RMPA1950-78 3.0V PCS CDMA MMIC Power Amplifier Module The RMPA1950-78 is a small outline, high efficiency Power Amplifier module for PCS CDMA personal communication system applications. The Power Amplifier module is internally matched to 50 ohms which minimizes the use
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RMPA1950-78
RMPA1950-78
RAYTHEON
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RAYTHEON
Abstract: No abstract text available
Text: 5D\WKHRQ&RPPHUFLDO OHFWURQLFV RMPA2050-78 3.0V W-CDMA MMIC Power Amplifier Module Description The RMPA2050-78 is a small outline, high efficiency power amplifier module for W-CDMA personal communication system applications. The Power amplifier is a self contained 50 ohms matched module which reduces circuit
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RMPA2050-78
RMPA2050-78
RMPA2050
RAYTHEON
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Untitled
Abstract: No abstract text available
Text: HMC386LP4 / 386LP4E v04.1209 MMIC VCO w/ BUFFER AMPLIFIER, 2.6 - 2.8 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Ampliier for: Pout: +5 dBm • Wireless Infrastructure Phase Noise: -114 dBc/Hz @100 kHz • Industrial Controls No External Resonator Needed
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HMC386LP4
386LP4E
HMC386LP4
HMC386LP4E
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Untitled
Abstract: No abstract text available
Text: AP1063 Cellular Band CDMA Power Amplifier Module 2004. May Preliminary AP1063 A /(B) is a Power Amplifier Module working for dual mode AMPS/CDMA cellular handset applications. The MMIC is manufactured on an advanced InGaP HBT technology and offers high linearity, high efficiency
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AP1063
AP1063
CDMA20001X
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HMC386LP4
Abstract: h386
Text: HMC386LP4 / 386LP4E v04.1209 MMIC VCO w/ BUFFER AMPLIFIER, 2.6 - 2.8 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +5 dBm • Wireless Infrastructure Phase Noise: -114 dBc/Hz @100 kHz • Industrial Controls No External Resonator Needed
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HMC386LP4
386LP4E
HMC386LP4
HMC386LP4E
h386
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HMC313
Abstract: HMC213 HMC361S8G HMC364S8G hmc362 HMC394LP4 HMC341 HMC361 HMC362S8G HMC363
Text: OFF-THE-SHELF INSIDE. HITTITE MICROWAVE CORPORATION SPRING/SUMMER 2001 New Prescalar Product Line Meets The Demands of Broadband Markets! Hittite announces ten 10 new prescalar standard products that operate from DC to 13GHz. Standard division ratios of two, four, and eight have
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13GHz.
OC-48
OC-192
HMC313
HMC213
HMC361S8G
HMC364S8G
hmc362
HMC394LP4
HMC341
HMC361
HMC362S8G
HMC363
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Untitled
Abstract: No abstract text available
Text: RFUV1702 RFUV1702 17.7GHz TO 19.7GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features 1 GND 2 N/C GND 30 29 28 Q 27 N/C Vg1 26 25 24 VLPA12 23 N/C 90 RF Frequency: 17.7GHz to
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RFUV1702
32-Pin,
VLPA12
85GHz
85GHz
28dBm
10dBm
15dBc
100nF
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Untitled
Abstract: No abstract text available
Text: RFUV1702 RFUV1702 17.7GHz TO 19.7GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features 1 GND 2 N/C GND 30 29 28 Q 27 N/C Vg1 26 25 24 VLPA12 23 N/C 90 RF Frequency: 17.7GHz to
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RFUV1702
32-Pin,
VLPA12
85GHz
28dBm
10dBm
15dBc
100nF
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Untitled
Abstract: No abstract text available
Text: Product Description SLN-186 Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz.
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SLN-186
SLN-186
SLN-186-TR1
SLN-186-TR2
SLN-186-TR3
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SLN-186
Abstract: SLN-186-TR1 SLN-186-TR2 SLN-186-TR3
Text: Product Description SLN-186 Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz.
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SLN-186
SLN-186
SLN-186-TR1
SLN-186-TR2
SLN-186-TR3
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SGA-3586
Abstract: No abstract text available
Text: Preliminary SGA-3586 Product Description DC-5000 MHz Silicon Germanium Cascadeable Gain Block Sirenza Microdevices SGA-3586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal
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SGA-3586
DC-5000
SGA-3586
SGA3586
EDS-101382
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Untitled
Abstract: No abstract text available
Text: RFUV1703 RFUV1703 21GHz TO 26.5GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features 1 GND 2 N/C GND 30 29 28 Q 27 N/C Vg1 26 25 24 VLPA12 23 N/C 90 RF Frequency: 21GHz to 26.5GHz
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RFUV1703
21GHz
32-Pin,
VLPA12
25GHz
-10dB
27dBm
15dBc
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AI 186 N
Abstract: A440M 3.5V HBT MMIC Amplifier
Text: ejfl Stanford Microdevices Product Description SLN-186 Stanford M icrodevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface m ount plastic package. A Darlington configuration is used for broadband performance
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SLN-186
SLN-186
AI 186 N
A440M
3.5V HBT MMIC Amplifier
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3.5V HBT MMIC Amplifier
Abstract: No abstract text available
Text: ¿¡3 Stanford Microdevices Product Description SLN-187 Stanford M icrodevices’ SLN-187 is a high performance gal lium arsenide heterojunction bipolar transistor MMIC housed in a low-cost plastic drop-in package. A Darlington configu ration is used for broadband perform ance from DC-4.0 GHz.
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SLN-187
SLN-186.
SLN-187
3.5V HBT MMIC Amplifier
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Untitled
Abstract: No abstract text available
Text: ¿5 Stanford Microdevices Product Description SLN-186 Stanford M icrodevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance
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SLN-186
SLN-186
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