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    30-06 A7T Search Results

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    30-06 A7T Price and Stock

    IXYS Corporation MWI30-06A7T

    IGBT MODULE 600V 45A 140W E2
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    DigiKey MWI30-06A7T Box
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    TME MWI30-06A7T 1
    • 1 $66.3
    • 10 $52.68
    • 100 $52.68
    • 1000 $52.68
    • 10000 $52.68
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    Littelfuse Inc MWI30-06A7T

    Igbt Module - Sixpack E2-Pack-Pfp/Box |Littelfuse MWI30-06A7T
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    Newark MWI30-06A7T Bulk 6
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    30-06 A7T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A7t diode

    Abstract: diode a7t 30-06 A7T L 3006 MWI 30-06 A7T 30-06A7T th 3006
    Text: MWI 30-06 A7 MWI 30-06 A7T IGBT Modules Sixpack IC25 = 45 A VCES = 600 V VCE sat typ. = 1.9 V Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type: NTC - Option: MWI 30-06 A7 MWI 30-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4


    Original     		PDF MWI3006A7 A7t diode diode a7t 30-06 A7T L 3006 MWI 30-06 A7T 30-06A7T th 3006

    Untitled

    Abstract: No abstract text available
    Text: MWI 30-06 A7 MWI 30-06 A7T IC25 = 45 A VCES = 600 V VCE sat typ. = 1.9 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Type: NTC - Option: MWI 30-06 A7 MWI 30-06 A7T without NTC with NTC 1 2 5 6 9 10 T NTC 16 15 14 3 4 11 12 7 8 E72873


    Original     		PDF E72873 MWI3006A7 20070912a

    30-06 A7T

    Abstract: E72873 NTC 100 - 11
    Text: MWI 30-06 A7 MWI 30-06 A7T IC25 = 45 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Type: NTC - Option: MWI 30-06 A7 MWI 30-06 A7T 1 2 5 6 9 10 T NTC 16 15 14 without NTC with NTC 3 4 7 8 11 12 E72873


    Original     		PDF E72873 MWI3006A7 20070912a 30-06 A7T E72873 NTC 100 - 11

    3006A7

    Abstract: MWI 30-06 A7T
    Text: Advanced Technical Information MWI 30-06 A7 IC25 = 45 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 Type NTC - Option MWI 30-06 A7 MWI 30-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4 7


    Original     		PDF B25/50 3006A7 MWI 30-06 A7T

    VUO 121-16 NO1

    Abstract: D-68623 MKI 75-06 A7 IXYS VUO 30
    Text: Product Change Notice PCN No.: 04/06 Customer: All IXYS product type: Package: E2 (see pictures on page 2) Products: See page 2 Description of change: New molding tool for E2 housing Reason for change: Releasing second source supplier to ensure delivery performance


    Original     		PDF

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    Untitled

    Abstract: No abstract text available
    Text: TT WS256K8-XCX M/HITE /M ICRO ELECTRO N ICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • A c c e ss T im e s 25 to 45n S PIN CONFIGURATION TOP VIEW NCC A16C A14C A I2 C A7T A6C A5L A4 C A3C A2¿ A1C AO □ i/oor 1/01 c 1/0 2 C Vss Q 1 2 3 4 5 6 7 8 9 10 11 12 13


    OCR Scan     		PDF WS256K8-XCX 256Kx8 MIL-STD-883 06HXX 07HXX 256Kx 08HXX

    ltdf

    Abstract: 28C64A 28C64A-20 28C64A-25
    Text: í « GENERAL INSTRUM ENT 28C64A PREURflDMARY ÖMFORRjflÄTOONI 64K 8K X8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION Top View w RDY/BUSY C •1 tNCk a 12 rL. 2 A7t= AeC AsC A4 c A3 C 3 4 5 6 7 A2 C 8 Al C 9 A(j C 10 OUTPUT ENABLE !-=—-


    OCR Scan     		PDF 28C64A ds11109a-8 ltdf 28C64A 28C64A-20 28C64A-25

    Untitled

    Abstract: No abstract text available
    Text: HN27C101AP/AFP/ATT Series HN27C301AP/AFP Series 131072-word x 8-bit CMOS One Time Electrically Programmable ROM HITACHI Description The HN27C101AP/AFP/ATT series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C101 AP/AFP/ATT, HN27C301AP /AFP series are in the "1" state output high .


    OCR Scan     		PDF HN27C101AP/AFP/ATT HN27C301AP/AFP 131072-word HN27C101 HN27C301AP 32-pin HN27C101ATT high-reliabilit/00

    9P4M

    Abstract: 10P4M 12P4M 12p8 PLE5P8 PLE8P8 8p4c t461 PLE5P8A
    Text: MONOLITHIC MEMORIES INC tfl » e J b3D3mO □ OOS'tkS 3 f D r-'W ’ Programmable Logic Element PLE Circuit Fam ily Ordering Information Features/Benefits PLE5P8 A C N STD • Programmable replacement for conventional TTL logic TZPR O C ESSIN G T • Reduces 1C inventories and simplities their control


    OCR Scan     		PDF A10A9A6' 9P4M 10P4M 12P4M 12p8 PLE5P8 PLE8P8 8p4c t461 PLE5P8A

    AT49F1025-70VC

    Abstract: AT49F1025
    Text: Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Word By Word Programming -1 0 ^s/Word Typical Hardware Data Protection


    OCR Scan     		PDF 10x14 AT49F1025 MO-142 AT49F1025-70VC

    Untitled

    Abstract: No abstract text available
    Text: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256A speed-55/70/85/100ns 1DC01-11-MAY94 HY62256AP HY62256ALP HY62256ALLP

    Triac t460

    Abstract: JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM
    Text: •y — S NEC i Ï T / V f Z r J — «F h A Tc=88°C ¿OfÎItlÊIW TRIACT'fo —;u K T H b tL , ltìl<hlE^È^ÌclÈii:£;flTv>i;1~60T'', i)l> fé ^ S C R a t < t è fëtë, 2 /— 8P2SM, 8P4SM 8P2SMA, 8P4SMA 8Pr jSM, 8Pr jSMA (i, ^ ^ > » 8 IJ — •


    OCR Scan     		PDF O-220AB' oTO-220AB Triac t460 JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM

    Untitled

    Abstract: No abstract text available
    Text: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL


    OCR Scan     		PDF HM62W8128 131072-Word 8128LP-10 8128LP-12 8128LP-1O LP-12 8128LFP-10

    TC571000D-15

    Abstract: TC5710000-15 TC571001D-15 571000D TC531000P TC5710010-15 TC571000D tc571001d h102 d1 tc5710000
    Text: TOSHIBA MOS MEMORY PRODUCTS T C 5 710 0 0 D -15 , -20, -200, -25 T C 5 71 0 0 1D -15 , -20, -200, -25 IDESCRIPTIONI The TC571000D/TC571001D is a 131,072 word * 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. The TC571000D is JEDEC standard pin configuration and the TC571001D is compatible with


    OCR Scan     		PDF TC571000D/TC571001D TC571000D TC571001D 30mA/6 150ns/200ns/250ns. TC571000D/TC571001D. TC571001D TC571000D-15 TC5710000-15 TC571001D-15 571000D TC531000P TC5710010-15 h102 d1 tc5710000

    EZ722

    Abstract: A7t smd EZ524 smd code A7t smd A6t zd 409 5962-88525 07 xa Select 642 UX A14C AT28C256
    Text: Features • Fast Read Access Time -150 ns • Automatic Page Write Operation - Internal Address and Data Latches for 64 Bytes - Internal Control Timer • Fast Write Cycle Times - Page Write Cycle Time: 3 ms or 10 ms Maximum - 1 to 64-Byte Page Write Operation


    OCR Scan     		PDF 64-Byte AT28C256 EZ722 A7t smd EZ524 smd code A7t smd A6t zd 409 5962-88525 07 xa Select 642 UX A14C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA LOGIC/MEMORY 4ÖE D DD523Ô0 32,768 W O R D x 9 BIT BiCM O S STATIC R A M 1 PRELIMINARY DESCRIPTION The TC55B329P/J is a 294,912 bits high speed static random access memory organized as 32,768 words by 9 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba's BiCMOS


    OCR Scan     		PDF DD523Ã TC55B329P/J TC55B329P/Jâ TC55B329P/J-12, TC55B329P/J-15 DIP32-P-300)

    MHS 65756

    Abstract: HM1-65756
    Text: 41E MATRA SñbñMSfc. D 00G5171 5ñS • M N H S M H S January 1991 HM 65756 HI-REL DATA SHEET 32 k X 8 HIGH SPEED CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE OUTPUT ENABLE


    OCR Scan     		PDF 00G5171 MHS 65756 HM1-65756

    smd A7t

    Abstract: smd code A7t
    Text: E g M/HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION • JEDEC Standard 32 Pin DIP, Hermetic Ceramic Package A18 [I 1 32 A16 C 2


    OCR Scan     		PDF WE512K8, WE256K8, WE128K8-XCX 512Kx8 WE512K8-XCX, 150nS, 200nS, 250nS, 300nS smd A7t smd code A7t

    Untitled

    Abstract: No abstract text available
    Text: M 2 ic r o c h ip 8 C 1 6 A 16K 2K x 8 CMOS EEPROM BLOCK DIAGRAM FEATURES I/O O • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 nA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years


    OCR Scan     		PDF DS11125E-page bl03201 28C16A 28C16AF 8x20mm

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan     		PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d

    Untitled

    Abstract: No abstract text available
    Text: G 2 WMF128K8-XXX5 M/HITE /MICROELECTRONICS 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • A c c e s s T i m e s o f 60, 7 0, 90, 120, 1 5 0 n s ■ O rg a n iz e d as 1 2 8 K x 8 ■ P a c k a g in g ■ C o m m e r c i a l , In d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a ng e s


    OCR Scan     		PDF WMF128K8-XXX5 128Kx8

    Untitled

    Abstract: No abstract text available
    Text: • HYUNDAI HY2316050 Series 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316050 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit Byte mode or as 1,048,576 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS


    OCR Scan     		PDF HY2316050 16-bit 16Mbit 16bit 120ns 16bit 600miJ