Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    300 AMP MOSFET Search Results

    300 AMP MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    300 AMP MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRHNJ9130

    Abstract: DIODE SMD 10A FR001 FR-0016
    Text: SFRC9130S.5B Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 10 AMP /100 Volts 300 mΩ Radiation Tolerant P-Channel MOSFET


    Original     		SFRC9130S SFRC9130 IRHNJ9130 F9130 FR0016A DIODE SMD 10A FR001 FR-0016 PDF

    Untitled

    Abstract: No abstract text available
    Text: SFF40N30M SFF40N30Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 40 AMP / 300 Volts 0.10 Ω N-Channel Power MOSFET Part Number / Ordering Information 1/


    Original     		SFF40N30M SFF40N30Z SFF40N30 O-254 O-254Z PDF

    FT0013A

    Abstract: FT001 IRF9130 mosfet IRF9130 SFX9130J
    Text: SFX9130J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 10 AMP /100 Volts 300 mΩ P-Channel MOSFET TO-257 Features: • •


    Original     		SFX9130J O-257 IRF9130 FT0013A FT0013A FT001 IRF9130 mosfet SFX9130J PDF

    IXTH40N30

    Abstract: SFF40N30M SFF40N30Z
    Text: SFF40N30M SFF40N30Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 40 AMP / 300 Volts 0.10 Ω N-Channel Power MOSFET Part Number / Ordering Information 1/


    Original     		SFF40N30M SFF40N30Z SFF40N30 O-254 O-254Z IXTH40N30 SFF40N30M SFF40N30Z PDF

    Untitled

    Abstract: No abstract text available
    Text: SML75SUZ03S MECHANICAL DATA Ultrafast Recovery Diode 300 Volt, 75 Amp All Dimensions are in Millimeters TECHNOLOGY Back of Case Cathode The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML 75SUZ03S


    Original     		SML75SUZ03S 75SUZ03S hig06) PDF

    Untitled

    Abstract: No abstract text available
    Text: SML75SUZ03B MECHANICAL DATA Ultrafast Recovery Diode 300 Volt, 75 Amp All Dimensions are in Millimeters Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 75SUZ03B diode features a triple charge control action utilising


    Original     		SML75SUZ03B 75SUZ03B PDF

    to264

    Abstract: SML100SUZ03L
    Text: SML100SUZ03L Ultrafast Recovery Diode 300 Volt,100 Amp Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 100SUZ03L diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		SML100SUZ03L 100SUZ03L to264 SML100SUZ03L PDF

    SML30SUZ03S

    Abstract: No abstract text available
    Text: SML30SUZ03S Ultrafast Recovery Diode 300 Volt, 30 Amp Back of Case Cathode TECHNOLOGY SML 30SUZ03S The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		SML30SUZ03S 30SUZ03S SML30SUZ03S PDF

    317UC

    Abstract: SML75SUZ03B te 2443
    Text: SML75SUZ03B Ultrafast Recovery Diode 300 Volt, 75 Amp Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 75SUZ03B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		SML75SUZ03B 75SUZ03B 317UC SML75SUZ03B te 2443 PDF

    SML50EUZ03B

    Abstract: No abstract text available
    Text: SML50EUZ03B Enhanced Ultrafast Recovery Diode 300 Volt, 50 Amp Back of Case TECHNOLOGY Cathode SML The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		SML50EUZ03B 50EUZ03B SML50EUZ03B PDF

    local lifetime

    Abstract: No abstract text available
    Text: SML30SUZ03S Ultrafast Recovery Diode 300 Volt, 30 Amp MECHANICAL DATA Dimensions in mm inches Back of Case Cathode TECHNOLOGY SML 30SUZ03S The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s


    Original     		SML30SUZ03S 30SUZ03S local lifetime PDF

    Untitled

    Abstract: No abstract text available
    Text: SML30SUZ03K MECHANICAL DATA Dimensions in mm inches Ultrafast Recovery Diode 300 Volt, 30 Amp Back of Case Cathode TECHNOLOGY SML 30SUZ03K 1 The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s


    Original     		SML30SUZ03K 30SUZ03K circui602) PDF

    SML30EUZ03S

    Abstract: No abstract text available
    Text: SML30EUZ03S SEME LAB 3 D PAK Package Enhanced Ultrafast Recovery Diode 300 Volt, 30 Amp TECHNOLOGY Back of Case Cathode The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising SML SML 10SUZ12D 30EUZ03S


    Original     		SML30EUZ03S 10SUZ12D 30EUZ03S SML30EUZ03S PDF

    IGBT DRIVER SCHEMATIC chip

    Abstract: IGBT/MOSFET Gate Drive OMD100F60HL OMD120L60HL OMD240N10HL OMD300N06HL
    Text: OMD120L60HL Preliminary Data Sheet OMD300N06HL OMD240N10HL OMD100F60HL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules With Internal Gate Drive, Half-Bridge Configuration FEATURES • • • • •


    Original     		OMD300N06HL OMD120L60HL OMD240N10HL OMD100F60HL IGBT DRIVER SCHEMATIC chip IGBT/MOSFET Gate Drive OMD100F60HL OMD120L60HL PDF

    SML50EUZ03S

    Abstract: freewheeling diode 50A
    Text: SML50EUZ03S SEME LAB 3 D PAK Package Enhanced Ultrafast Recovery Diode 300 Volt, 50 Amp TECHNOLOGY Back of Case Cathode The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising SML SML 10SUZ12D 50EUZ03S


    Original     		SML50EUZ03S 10SUZ12D 50EUZ03S SML50EUZ03S freewheeling diode 50A PDF

    300V-20A

    Abstract: circuit for 19.5 VOLT 4.4 AMP smps
    Text: SML20SUZ03K MECHANICAL DATA Dimensions in mm inches Ultrafast Recovery Diode 300 Volt, 20 Amp TECHNOLOGY Back of Case Cathode SML 20SUZ03K 1 The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s


    Original     		SML20SUZ03K 20SUZ03K circui602) 300V-20A circuit for 19.5 VOLT 4.4 AMP smps PDF

    SML75EUZ03S

    Abstract: diode 736
    Text: SML75EUZ03S Enhanced Ultrafast Recovery Diode 300 Volt, 75 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 75EUZ03S diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		SML75EUZ03S 75EUZ03S SML75EUZ03S diode 736 PDF

    IRF9130

    Abstract: SFX9130J IRF9130 mosfet
    Text: SFX9130J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 10 AMP /100 Volts 300 mO P-Channel MOSFET TO-257 Note 1: maximum current limited by package


    Original     		SFX9130J O-257 IRF9130 VGS035 -100V, 125oC FT0013A SFX9130J IRF9130 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: SML10SIC03YC 4.83 0.190 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) Silicon Carbide Schottky Diode 300 Volt, 2X10 Amp TECHNOLOGY 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420)


    Original     		SML10SIC03YC O-257 2X10A PDF

    F00149

    Abstract: mosfet 4800 IXTH40N30 SFF40N30B
    Text: PRELIMINARY SFF40N30B SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 40 AMP 300 VOLTS Designer’s Data Sheet 0.10 Q N-CHANNEL POWER MOSFET FEATURES: Rugged construction with polysilicon gate


    OCR Scan     		670-SSDI SFF40N30B IXTH40N30 F00149 mosfet 4800 SFF40N30B PDF

    IXTH40N30

    Abstract: SFF40N30N SFF40N30P
    Text: mi PRELIMINARY # SFF40N30N SFF40N30P SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 40 AMP 300 VOLTS Designer’s Data Sheet 0.10 Q N-CHANNEL POWER MOSFET FEATURES: Rugged construction with polysilicon gate


    OCR Scan     		670-SSDI SFF40N30N SFF40N30P IXTH40N30 O-258 O-259 O-258 2x200 SFF40N30P PDF

    SFX40N30MDB

    Abstract: TO-254DB
    Text: a « ja s » ' §S II- PRELIMINARY SFX40N30MDB SOLID STATE DEVICES, INC LV-: 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 40 AMP 300 VOLTS 0.09 Q. N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES:


    OCR Scan     		SFX40N30MDB 670-SSDI MIL-STD-750, O-254DB TO-254DB PDF

    high voltage diode T35

    Abstract: T35 diode diode T35 DDD1013 OMD100F60HL OMD120L60HL OMD240N10HL OMD300N06HL TG73
    Text: OMD120L60HL Preliminary Data Sheet OMD300N06HL OMD240N10HL OMDIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules With Internal Gate Drive, Half-Bridge Configuration FEATURES • • • • •


    OCR Scan     		OMD300N06HL OMD120L60HL OMD240N10HL 534-5776FAX 537-424S high voltage diode T35 T35 diode diode T35 DDD1013 OMD100F60HL TG73 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet OMD300N06HL OMD120L60HL OMD240N10HL OMDIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules With Internal Gate Drive, Half-Bridge Configuration FEATURES • • • • •


    OCR Scan     		OMD300N06HL OMD120L60HL OMD240N10HL b76TD73 534-5776F PDF