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    300F DIODE Search Results

    300F DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    300F DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MV8303C Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage18 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W)1.4 Semiconductor MaterialGaAs Package StylePill-C


    Original     		PDF MV8303C Voltage18

    Untitled

    Abstract: No abstract text available
    Text: MS4540B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.40G P(D) Max. (W)0.3 Semiconductor MaterialSilicon Package StylePin


    Original     		PDF MS4540B Voltage120

    Untitled

    Abstract: No abstract text available
    Text: MA48707A166 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage25 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-B Mounting StyleS


    Original     		PDF MA48707A166 Voltage25

    Untitled

    Abstract: No abstract text available
    Text: 4041-11-00 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A


    Original     		PDF Voltage60

    Untitled

    Abstract: No abstract text available
    Text: VSE32W Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage18 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS


    Original     		PDF VSE32W Voltage18

    Untitled

    Abstract: No abstract text available
    Text: MA48707A168 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage25 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS


    Original     		PDF MA48707A168 Voltage25

    Untitled

    Abstract: No abstract text available
    Text: DC4141J02 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.80G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A


    Original     		PDF DC4141J02 Voltage60

    Untitled

    Abstract: No abstract text available
    Text: DC4141F01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A


    Original     		PDF DC4141F01 Voltage60

    Untitled

    Abstract: No abstract text available
    Text: HSMS2850L30 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage2.0 BandC Test Freq5.8G Frequency Min. (Hz)915M Frequency Max. (Hz)5.8G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap.300f Minimum Figure of Merit


    Original     		PDF HSMS2850L30

    Untitled

    Abstract: No abstract text available
    Text: D5146H Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage5.5 Q Factor Min. f(co) Min. (Hz) Cut-off freq.180G P(D) Max. (W)300m Semiconductor MaterialSilicon Package StylePill-B


    Original     		PDF D5146H

    Untitled

    Abstract: No abstract text available
    Text: MA46600-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio1.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.8.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E


    Original     		PDF MA46600-186 Voltage30

    Untitled

    Abstract: No abstract text available
    Text: DC4151F01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A


    Original     		PDF DC4151F01 Voltage90

    Untitled

    Abstract: No abstract text available
    Text: MA46600-168 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio1.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.8.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin


    Original     		PDF MA46600-168 Voltage30

    Untitled

    Abstract: No abstract text available
    Text: MS4500A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq.20G P(D) Max. (W)0.3 Semiconductor MaterialSilicon Package StylePin Mounting StyleS


    Original     		PDF MS4500A Voltage30

    300f diode

    Abstract: No abstract text available
    Text: 4041-11-02 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A


    Original     		PDF Voltage60 300f diode

    Untitled

    Abstract: No abstract text available
    Text: DC4141J01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.80G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A


    Original     		PDF DC4141J01 Voltage60

    Untitled

    Abstract: No abstract text available
    Text: DC4141F02 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A


    Original     		PDF DC4141F02 Voltage60

    Untitled

    Abstract: No abstract text available
    Text: MV8303D Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W)1.4 Semiconductor MaterialGaAs Package StylePill-C


    Original     		PDF MV8303D Voltage30

    300f diode

    Abstract: No abstract text available
    Text: HSMS2850T30 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage2.0 BandC Test Freq5.8G Frequency Min. (Hz)915M Frequency Max. (Hz)5.8G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap.300f Minimum Figure of Merit


    Original     		PDF HSMS2850T30 300f diode

    Untitled

    Abstract: No abstract text available
    Text: MA4357B1 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.70G P(D) Max. (W)0.5 Semiconductor MaterialSilicon Package StylePill-C


    Original     		PDF MA4357B1 Voltage90

    Untitled

    Abstract: No abstract text available
    Text: MV8303A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage6.0 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W)1.4 Semiconductor MaterialGaAs Package StylePill-C


    Original     		PDF MV8303A

    Untitled

    Abstract: No abstract text available
    Text: MA4P102-186 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 50 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.2.0 @If (A)10m Ct{Cj} Nom. (F) Junction Cap.300f Carrier Lifetime (S)20n @I(F) (test) (A) @I(R) (A) (Test Condition)10m


    Original     		PDF MA4P102-186

    Untitled

    Abstract: No abstract text available
    Text: MPN4166A15 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.300fò Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m


    Original     		PDF MPN4166A15

    Untitled

    Abstract: No abstract text available
    Text: MPN4165A15 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.300fò Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m


    Original     		PDF MPN4165A15