HDMKP
Abstract: No abstract text available
Text: HDMKP Vishay ESTA Capacitors For Power Electronics FEATURES • Highest RMS current rating, low ESR • High impulse current rating • Very low inductance • Extremely low losses even at high frequencies • High reliability and life expectancy • Heavy duty shock and vibration
|
Original
|
PDF
|
10-4/1kHz;
10-4/10kHz
8m/100kHz
08-Apr-05
HDMKP
|
Untitled
Abstract: No abstract text available
Text: GLI.A Vishay ESTA Metallized Film Power Capacitor FEATURES • Lowest stray inductance • Extremely low losses also at high frequencies • Low ESR: < 4mΩ • Highest RMS current rating: up to 100A • High impulse discharge current capability • Heavy duty shock and vibration
|
Original
|
PDF
|
10-4/2kHz
08-Apr-05
|
film capacitor markings
Abstract: No abstract text available
Text: GLI.A Vishay ESTA Metallized Film Power Capacitor FEATURES • Lowest stray inductance • Extremely low losses also at high frequencies • Low ESR: < 4mΩ • Highest RMS current rating: up to 100A • High impulse discharge current capability • Heavy duty shock and vibration
|
Original
|
PDF
|
10-4/2kHz
18-Jul-08
film capacitor markings
|
82C8167
Abstract: UM82C8167 UM82C8
Text: UMC UM82C8167 S S 2 S S S 2 S 2 Î Real-Time Clock RTC eatures Microprocessor compatible (8-bit data bus) Milliseconds through month counters 56 bits of RAM with comparator to compare the real time counter to the RAM data 2 IN TERRU PT OUTPUTS with 8 possible interrupt
|
OCR Scan
|
PDF
|
UM82C8167
24-hour
UM82C8167
82C8167
82C8167
UM82C8
|
Untitled
Abstract: No abstract text available
Text: RECTIFIERS SES5601C SES5602C SES5603C High Efficiency, 25A Center-Tap FEATURES • Low Forward Voltage • Fast Switching Speed • Convenient Package • High Surge Capability • Low Thermal Resistance • Mechanically Rugged TO-3 Package • Available as Positive or Negative Center-Tap
|
OCR Scan
|
PDF
|
SES5601C
SES5602C
SES5603C
SES5601C.
|
Untitled
Abstract: No abstract text available
Text: TN2535 I Ljà Supertex. inc. I l L J U U 254° W Lr Low Thresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON ^GS(th) l[)(ON) b v dgs (max) (max) (min) 350V 12a 1.8V 400V 12Q 1.8 V Order Number / Package TO-243AA*
|
OCR Scan
|
PDF
|
TN2535
O-243AA*
TN2540N8
TN2535ND
TN2540ND
OT-89,
|
Untitled
Abstract: No abstract text available
Text: 32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT FEATURES: IDT49C460 IDT49C460A IDT49C460B IDT49C460C IDT49C460D IDT49C460E DESCRIPTION: • Fast Detect 10ns max. 12ns (max.) 16ns (max.) 25ns (max.) 30ns (max.) 40ns (max.) Correct 14ns (max.) 18ns (max.)
|
OCR Scan
|
PDF
|
32-BIT
IDT49C460
IDT49C460A
IDT49C460B
IDT49C460C
IDT49C460D
IDT49C460E
|
MOTOROLA POWER TRANSISTOR
Abstract: working of astable multivibrator circuit bipolar transistor tester mje13008 motorola AN1033 BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS Tektronix 7603 tester SCR DL111/D AN569
Text: by'ANI 083/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA AN1083 Basic Thermal Management of Power Semiconductors BY AL PSHAENICH MOTOROLA SEMICONDUCTOR PRODUCTS SECTOR Thermal management of power semiconductors is often overlooked by design engineers, either through oversight,
|
OCR Scan
|
PDF
|
AN1083/D
AN1083/D
MOTOROLA POWER TRANSISTOR
working of astable multivibrator circuit
bipolar transistor tester
mje13008
motorola AN1033
BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS
Tektronix 7603
tester SCR
DL111/D
AN569
|
Untitled
Abstract: No abstract text available
Text: te s SLOTTED OPTICAL SWITCH DPTDELECTROHICS CNY29 J 11 PACKAGE DIMENSIONS SYMBOL r-°T M ILLIM ETER S M IN. t r 3 - i* > r L b’ SECTIO N X - X T IN C H E S MIN. 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119 .125 .024 .030 a 2 b, D D, d2 e2
|
OCR Scan
|
PDF
|
CNY29
ST1326
ST1327
|
ds132
Abstract: No abstract text available
Text: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BST86 FEATURES: PARTMARKING DETAIL - KO ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 180 UNIT V Continuous Drain Current at Ta = 25°C •d 300 mA mA Pulse Drain Current taM
|
OCR Scan
|
PDF
|
BST86
100/iA
lD300m
300fis.
70S7fl
ds132
|
Untitled
Abstract: No abstract text available
Text: =G 3 6 GEC P L E S S E Y [ s e m i c o n d u c t o r s NOVEMBER 1990 PRELIMINARY INFO RM A TIO N ! SL7953 SUBSCRIBER LINE INTERFACE CIRCUIT The SL7953 is a Subscriber Line Interface Circuit SLIC for use at the telephone exchange or PABX end of a telephone line.
|
OCR Scan
|
PDF
|
SL7953
SL7953
PS2448
|
2T931A
Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K
|
OCR Scan
|
PDF
|
MOKP51KOB,
KTC631
TI2023
II2033
TT213
TI216
fI217
II302
XI306
n306A
2T931A
KT853
2T926A
KT838A
2T803A
2T809A
2T904A
2T808A
2T603
2T921A
|
A244D
Abstract: meuselwitz "halbleiterwerk frankfurt" VEB Kombinat zf filter A244 scans-048 halbleiterwerk Halbleiterwerk Frankfurt VEB Halbleiterwerk Frankfurt veb halbleiterwerk
Text: ìr 31H A 244 D Vorläufige technisch« Daten Integrierte A M -Em pfängerschaltung fü r AM - Em pfänger bis 3 0 MHz. Oer S chaltkreis beinhaltet neben Vor-, M isch- und O szillatorstufe einen vierstufigen Z F -V e rs tä rk e r und zwei unabhängige Regelkreise.
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: FMMT2369 FMMT2369A S 0 T 2 3 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2369 - 1J FM MT2369A - P5 FMMT2369R - 9R FMMT2369AR - 9A ABSOLUTE MAXIMUM RATINGS VALUE U N IT V CBO 40 V V CES 40 V V C EO 15 V V mA PARAM ETER SYMBOL
|
OCR Scan
|
PDF
|
FMMT2369
FMMT2369A
FMMT2369
MT2369A
FMMT2369R
FMMT2369AR
ELEFMMT2369
300ns
DS201
|
|
|
VP0808B
Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P
Text: VPMH10 Part Numbers: VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B Leakage Currente Ohmic Region Vos— d r a in Tc—CASE TEMPERATURE °C SO U R C E VOLTAGE (VOLTS) ON Resistance Characteristics O Z I -60 -2 0 20 60 100 140 180
|
OCR Scan
|
PDF
|
VPMH10
300us,
VP1008L,
VP0808L,
VP1008M,
VP0808M,
VQ2006P,
VQ2006J,
VP1008B,
VP0808B
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
VQ2006J
VQ2006P
|
Untitled
Abstract: No abstract text available
Text: HIN202E thru HIN213E HARRIS S E M I C O N D U C T O R +/-15kV, ESD -Protected, +5V Powered, RS-232 Transm itters/R eceivers December 1997 Features Description • High Speed ISDN Compatible. 230kbits/s The HIN202E-HIN213E family of RS-232 transmitters/receivers
|
OCR Scan
|
PDF
|
HIN202E
HIN213E
/-15kV,
RS-232
230kbits/s
HIN202E-HIN213E
RS-232E
1-800-4-HARRIS
|
irf840
Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j
|
OCR Scan
|
PDF
|
IVN6100TNU
IVN6200CND
O-220
VN0401D
IVN6200CNE
T0-220
IRF533
IVN6200CNF
VN0801D
irf840
equivalent irf840
irf840 equivalent
irf840 rf
MTM3N55
|
4N29-4N33
Abstract: No abstract text available
Text: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E
|
OCR Scan
|
PDF
|
4N29A,
4N32A,
E51868
0110b
74bbflSl
4N29-4N33
4N29-4N33
|
Untitled
Abstract: No abstract text available
Text: b.QE ]> • Û1331S7 GG0LH34 flbO M S r iL B SEUELAB PLC T ' H - Z S SEMELAB D1014UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DM O SRFFET 20W -28V-400M H z SINGLE ENDED M ECH A N ICA L DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN
|
OCR Scan
|
PDF
|
1331S7
GG0LH34
D1014UK
-28V-400M
300fis,
|
Untitled
Abstract: No abstract text available
Text: SENELAB LTD 37E » DEC 3 i 1987 Ö1331Ö7 OÜGDlGä O • SMLB SEMELAB BDS10 BDS11 B DS12 NEW PRODUCT ^ SILICON NPN EPITAXIAL BASE TO 220 METAL MECHANICAL DATA Dimensions in mm 10-60 FEATURES rjf • HERMETIC TO 220 METAL PACKAGE it • HIGH RELIABILTY • ISOLATED OPTION
|
OCR Scan
|
PDF
|
BDS10
BDS11
220-ISO
BDS12
150TcasÂ
|
Untitled
Abstract: No abstract text available
Text: SA M S UN G E L E C T R O N I C S INC b4E » • TTbHma N-CHANNEL POWER MOSFETS IRFP150/1511152/153 FEATURES • • • • • • • D Q 1 2 3 Ü 4 l b 1* ■ SMGK TO-3P Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
|
OCR Scan
|
PDF
|
IRFP150/1511152/153
IRFP150/151/152/153
IRFP150
IRFP152
IRFP153
IRFP150/151
|
Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division R296XX/R297XX S tandard PROMs and P ow er-S w itched SPROMs Features Description • Devices are available in military -55°C to +125°C temperature range • Standard PROMs are offered in power-switched SPROM
|
OCR Scan
|
PDF
|
R296XX/R297XX
24-pin,
|
Untitled
Abstract: No abstract text available
Text: g g j g l l SSR8045CT/3 P R E L IM IN A R Y SOLID STATE DEVICES, INC 14849 Firestone Boulevard La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 80 AMP 45 VOLTS POSTIVE CENTERTAP SCHOTTKY RECTIFIER Designer’s Data Sheet FEATURES: • ■
|
OCR Scan
|
PDF
|
670-SSDI
SSR8045CA/3
SSR8045D/3
SSR8045CT/3
|
SPD502
Abstract: SPD503 SPD504 SPD505 SPD506
Text: y SPD502 PRELIMINARY 4 SOLID STATE DEVICES, INC thru SPD506 :- // 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 5 AMP 200-600 VOLTS 40 nsec HYPER FAST RECTIFIER Designer’s Data Sheet FEATURES: • ■ ■
|
OCR Scan
|
PDF
|
670-SSDI
SPD502
SPD506
SPD502
SPD503
SPD504
SPD505
SPD506
300ns
500mA,
|
