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StarTech ST7300USB3B 7 PORT USB 3.0 HUB W/ ADAPTER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ST7300USB3B		65		1	1 $84.8 10 $75.226 100 $66.7409 1000 $66.7409 10000 $66.7409	Buy Now
Newark	ST7300USB3B	Bulk	155		1	1 $99.53 10 $99.53 100 $99.53 1000 $99.53 10000 $99.53	Buy Now
RS	ST7300USB3B	Bulk	10		1	1 $88.19 10 $74.96 100 $74.96 1000 $74.96 10000 $74.96	Buy Now
NAC	ST7300USB3B		81		1	1 $75.87 10 $75.87 100 $75.87 1000 $75.87 10000 $75.87	Buy Now
Neutron USA	ST7300USB3B		112			1 $66.1 10 $66.1 100 $66.1 1000 $66.1 10000 $66.1	Buy Now
StarTech ST4300USBM 4 PORT USB 3.0 HUB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ST4300USBM		58		1	1 $160.15 10 $142.08 100 $131.25 1000 $131.25 10000 $131.25	Buy Now
Newark	ST4300USBM	Bulk	35		1	1 $191.17 10 $191.17 100 $191.17 1000 $191.17 10000 $191.17	Buy Now
NAC	ST4300USBM				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Neutron USA	ST4300USBM		112			1 $113.25 10 $113.25 100 $113.25 1000 $113.25 10000 $113.25	Buy Now
StarTech ST7300USBME 7 PORT INDUSTRIAL USB 3.0 HUB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ST7300USBME		54		1	1 $167.48 10 $148.58 100 $137.8124 1000 $137.8124 10000 $137.8124	Buy Now
Newark	ST7300USBME	Bulk	1		1	1 $214.76 10 $214.76 100 $214.76 1000 $214.76 10000 $214.76	Buy Now
RS	ST7300USBME	Bulk	34		1	1 $174.18 10 $165.47 100 $165.47 1000 $165.47 10000 $165.47	Buy Now
NAC	ST7300USBME		5		1	1 $158.14 10 $158.14 100 $158.14 1000 $158.14 10000 $158.14	Buy Now
Neutron USA	ST7300USBME		50			1 $169.99 10 $169.99 100 $169.99 1000 $169.99 10000 $169.99	Buy Now
StarTech ST4300USB3 4 PORT BLACK SUPERSPEED USB 3.0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ST4300USB3	Box	22		1	1 $66.91 10 $66.91 100 $57.484 1000 $57.484 10000 $57.484	Buy Now
Newark	ST4300USB3	Bulk			1	1 $77.32 10 $68.4 100 $61.6 1000 $61.6 10000 $61.6	Buy Now
NAC	ST4300USB3		65		1	1 $55.84 10 $55.84 100 $55.84 1000 $55.84 10000 $55.84	Buy Now
Neutron USA	ST4300USB3		50			1 $79.99 10 $79.99 100 $79.99 1000 $79.99 10000 $79.99	Buy Now
PDuke Technology Inc MAF300US48B-MU2F4 ISOLATED / 300W / VOUT: 48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MAF300US48B-MU2F4	Box	9		1	1 $134.43 10 $118.155 100 $107.9628 1000 $107.9628 10000 $107.9628	Buy Now

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300US Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)	Original	MMBT2222AW OT-323 SC-70) MMBT2222AW 300us, 150mAdc, 15mAdc) 50mAdc) mAdc400	PDF
Untitled Abstract: No abstract text available Text: MMBTA05 MMBTA06 Driver NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM (3) MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%	Original	MMBTA05 MMBTA06 OT-23 MMBTA05 MMBTA06	PDF
EAR99 Abstract: MAGX-002731-180L00 Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V1 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	MAGX-002731-180L00 300us EAR99 300us, 500us, MAGX-002731-180L00	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1214M60 Preliminary TECHNOLOGIES, INC. 60W L-Band Radar LDMOS Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1214M60 is designed for the frequency band 1215-1400 MHz. Operating at 300us-10% pulse	Original	ILD1214M60 ILD1214M60 300us-10% ILD1214M60-REV-PR1-DS-REV-NC	PDF
HEMT 36 ghz transistor Abstract: No abstract text available Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 HEMT 36 ghz transistor	PDF
Untitled Abstract: No abstract text available Text: 1.5 4 5 IN IN IN IN IN IN IN IN IN 5391G 5392G 5393G 5394G 5395G 5396G 5397G 5398G 5399G T L , LEAD TEMPERATURE 60 HE RESISTIVE OR INDUCTIVE LOAD T A , LEAD TEMPERATURE 0.375" 9.5mm LEAD LENGTH INSTANTANEOUS FORWARD CURRENT,(A) 50 10 75 1.0 0.1 Tj=25 C Pulse Width 300us	Original	5391G 5392G 5393G 5394G 5395G 5396G 5397G 5398G 5399G 300us	PDF
5KE440CA Abstract: No abstract text available Text: RATINGS AND CHRACTERISTIC CURVES 1.5KE6.8 THRU 1.5KE440CA FIG. 11 - INSTANTANEOUS FORWARD VOLTAGE CHARACTERISTIS CURVE FIG. 12 - BREAKDOWN VOLTAGE TEMPERATURE COEFFICIENT CURVE ⊙ V - TEMPERATURE COEFFICIENT -mv/℃ ℃ 100 FORWARD CURRENT 10 PULSE WIDTH=300US	Original	5KE440CA 300US 5KE440CA	PDF
1GM sot-23 Abstract: MMBTA05 MMBTA06 Text: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 0.1 u 0.1 0.1 u 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%	Original	MMBTA05 MMBTA06 OT-23 MMBTA05 MMBTA06 1GM sot-23	PDF
GaN hemt Abstract: Gan hemt transistor Text: MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Features •       GaN depletion mode HEMT microwave transistor Common source configuration	Original	MAGX-002735-040L00 300us MAGX-002735-040L00 GaN hemt Gan hemt transistor	PDF
Untitled Abstract: No abstract text available Text: MMBTA55 MMBTA56 Driver PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - (3) MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle <	Original	MMBTA55 MMBTA56 OT-23 MMBTA55 MMBTA56	PDF
Untitled Abstract: No abstract text available Text: MMBT2222AW 3 * “G” Lead Pb -Free 1 2 SOT-323(SC-70) VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)	Original	MMBT2222AW OT-323 SC-70) MMBT2222AW 300us, 150mAdc, 15mAdc) 50mAdc) Sa400	PDF
Untitled Abstract: No abstract text available Text: NOTE 1 (NOTE 2) NOTES: 1.Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length, P.C.B mounted 2.Measured at1.0MHz and applied reverse voltage of 4.0V INSTANTANEOUS FORWARD CURRENT,(A) 50 10 1.0 0.1 Tj=25 C Pulse Width 300us 1% Duty Cycle	Original	300us	PDF
Untitled Abstract: No abstract text available Text: INSTANTANEOUS FORWARD CURRENT, A 50 10 1.0 0.1 Tj=25 C Pulse Width 300us 1% Duty Cycle .01 .1 .3 .5 .7 .9 1.1 1.3 1.5	Original	300us	PDF
MAGX-003135-120L00 Abstract: 003135 EAR99 Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Preliminary 28 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 003135	PDF

Untitled Abstract: No abstract text available Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00	PDF
MMBT2222 Abstract: MMBT2222A MMBT2222AW Text: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)	Original	MMBT2222AW OT-323 SC-70) MMBT2222AW 300us, 150mAdc, 15mAdc) 50mAdc) OT-23 MMBT2222 MMBT2222A	PDF
1GM sot-23 Abstract: MMBTA05 MMBTA06 Text: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0% 4. f T is defined as the freguency at which hfeextrapolates to unity	Original	MMBTA05 MMBTA06 OT-23 MMBTA05 MMBTA06 1GM sot-23	PDF
Untitled Abstract: No abstract text available Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V2 26 Oct 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	MAGX-002731-180L00 300us EAR99 300us,	PDF
Untitled Abstract: No abstract text available Text: 125 NOTE 1 j Storage temperature range stg NOTES: 1.Measured at1.0MHz and applied reverse voltage of 4.0V -65 to +150 INSTANTANEOUS FORWARD CURRENT,(A) 50 10 1.0 0.1 Tj=25 C Pulse Width 300us 1% Duty Cycle .01 .1 .3 .5 .7 .9 1.1 FORWARD VOLTAGE,(V) 1.3 1.5	Original	300us	PDF
EAR99 Abstract: HEMT 36 ghz transistor Text: MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	MAGX-003135-180L00 300us EAR99 MAGX-003135-180L00 HEMT 36 ghz transistor	PDF
Untitled Abstract: No abstract text available Text: SF31 - SF38 CREAT BY ART Pb 3.0AMPS. Super Fast Rectifiers DO-201AD RoHS COMPLIANCE Features High efficiency, low VF High current capability High reliability High surge current capability Low power loss For use in low voltage, high frequency inventor,	Original	DO-201AD MIL-STD-202, 300us	PDF
SMC MARKING Sk Abstract: SK520C Text: SK52C - SK520C CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Features For surface mounted application Metal to sillicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability	Original	SK52C SK520C SMC/DO-214AB J-STD-020D, RS-481 SMC MARKING Sk SK520C	PDF
ues704 Abstract: No abstract text available Text: RECTIFIERS UES704 UES705 UES706 UES704HR UES705HR UES706HR High Efficiency, 20A FEATU RES DESCRIPTIO N • • • • • • The UES704 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz.	OCR Scan	UES704 UES705 UES706 UES704HR UES705HR UES706HR 50nSec) UES704,	PDF
27 Mhz power amplifier Abstract: No abstract text available Text: TOSHIBA {DIS CR ETE/ OP TO} 909725 0 T OS HIB A Sb DE I TOITSSO □00745b =1 DISCRETE/OPTO -6 7 SILICON NPN E PIT A X IA L PLANAR TYPE Unit in mm 27 MHz POWER AMPLIFIER APPLICATIONS. 10.S MAX., 0 3 . 6 ÍQ . 3 FEATURES: • Reconnnended for Output Stage Application of	OCR Scan	00745b 150EL 27 Mhz power amplifier	PDF

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300US Search Results

300US Price and Stock

StarTech ST7300USB3B

StarTech ST4300USBM

StarTech ST7300USBME

StarTech ST4300USB3

PDuke Technology Inc MAF300US48B-MU2F4

300US Datasheets Context Search

Untitled

Untitled

EAR99

Untitled

HEMT 36 ghz transistor

Untitled

5KE440CA

1GM sot-23

GaN hemt

Untitled

Untitled

Untitled

Untitled

MAGX-003135-120L00

Untitled

MMBT2222

1GM sot-23

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EAR99

Untitled

SMC MARKING Sk

ues704

27 Mhz power amplifier