MMBTA42LT1
Abstract: MMBTA92LT1 mbta42
Text: M M BTA 42 LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTGE TRANDIDTOR 1 Complement to MMBTA92LT1 High Collector-Emitter Voltage:Vcbo=300V Collector current:Ic=500mA o Collector Dissipation:Pc=225mW Ta=25 C 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4
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OT-23
MMBTA92LT1
500mA
225mW(
20MHz
MMBTA42LT1
MMBTA92LT1
mbta42
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MBTA42
Abstract: BTA42LT1 MMBTA42LT1 MMBTA92LT1 bta42 bta 42
Text: M M BTA 42 LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTGE TRANDIDTOR 1 Complement to MMBTA92LT1 High Collector-Emitter Voltage:Vcbo=300V Collector current:Ic=500mA o Collector Dissipation:Pc=225mW Ta=25 C 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4
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OT-23
MMBTA92LT1
500mA
225mW(
20MHz
MBTA42
BTA42LT1
MMBTA42LT1
MMBTA92LT1
bta42
bta 42
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PDF
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MMBTA42LT1
Abstract: MMBTA92LT1
Text: M M B TA 9 2 LT 1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTGE TRANDIDTOR 1 Complement to MMBTA42LT1 High Collector-Emitter Voltage:Vcbo=-300V Collector current:Ic=-500mA o Collector Dissipation:Pc=225mW Ta=25 C 2 1. 1.BASE 2.EMITTER 3.COLLECTOR
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OT-23
MMBTA42LT1
-300V
-500mA
225mW(
20MHz
MMBTA42LT1
MMBTA92LT1
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PDF
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MMBTA42LT1
Abstract: MMBTA92LT1
Text: M M B TA 9 2 LT 1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTGE TRANDIDTOR 1 Complement to MMBTA42LT1 High Collector-Emitter Voltage:Vcbo=-300V Collector current:Ic=-500mA o Collector Dissipation:Pc=225mW Ta=25 C 2 1. 1.BASE 2.EMITTER 3.COLLECTOR
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OT-23
MMBTA42LT1
-300V
-500mA
225mW(
20MHz
MMBTA42LT1
MMBTA92LT1
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBTA42-AU NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • NPN silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 300V • • • • • Collector current IC = 500mA Acqire quality system certificate : TS16949
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MMBTA42-AU
500mA
TS16949
AEC-Q101
2011/65/EU
IEC61249
OT-23,
MIL-STD-750,
2013-REV
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PDF
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MMBTA42
Abstract: No abstract text available
Text: MMBTA42 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic
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MMBTA42
500mA
2002/95/EC
OT-23,
MIL-STD-750,
MMBTA42
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBTA42 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • NPN silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 300V • Collector current IC = 500mA • Lead free in comply with EU RoHS 2011/65/EU directives
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MMBTA42
500mA
2011/65/EU
IEC61249
OT-23,
MIL-STD-750,
2013-REV
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PDF
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Untitled
Abstract: No abstract text available
Text: Description SOT-23 □ □ □ □ Mechanical Dimensions Dimension in Inch JUNCTION TEMPERATURE -STORAGE TEMPERATURE -MAX POWER DISSIPATION Ta=25℃ -MAX VOLTAGE AND CURRENT Ta=25℃ +150℃ MAX
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OT-23
250mW
500mA
100uA
100nA
500mV
900mV
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PDF
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Untitled
Abstract: No abstract text available
Text: Description SOT-23 □ □ □ □ Mechanical Dimensions Dimension in Inch JUNCTION TEMPERATURE -STORAGE TEMPERATURE -MAX POWER DISSIPATION Ta=25℃ -MAX VOLTAGE AND CURRENT Ta=25℃ +150℃ MAX
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OT-23
250mW
500mA
100uA
250nA
100nA
500mV
900mV
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PDF
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18w sot23 transistor
Abstract: 300V 0.5A NPN transistor
Text: FMMT42CSM GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) FEATURES 0.76 ± 0.15 (0.03 ± 0.006)
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FMMT42CSM
FMMT42"
FMMT42CSM
FMMT42CSM-JQR-B
FMMT42DCSM
FMMT42DCSM-JQR-B
50MHz
18w sot23 transistor
300V 0.5A NPN transistor
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PDF
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18w sot23 transistor
Abstract: 1,8w sot23 transistor FMMT42CSM
Text: FMMT42CSM GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) FEATURES 0.76 ± 0.15 (0.03 ± 0.006)
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FMMT42CSM
20MHz
18w sot23 transistor
1,8w sot23 transistor
FMMT42CSM
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PDF
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SMLA42CSM
Abstract: No abstract text available
Text: SMLA42CSM SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006) 3 1 1.91 ± 0.10 (0.075 ± 0.004)
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SMLA42CSM
OT23CSM
20MHz
200ms
SMLA42CSM
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PDF
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18w sot23 transistor
Abstract: FMMT42CSM
Text: FMMT42CSM GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) FEATURES 0.76 ± 0.15 (0.03 ± 0.006)
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FMMT42CSM
20MHz
18w sot23 transistor
FMMT42CSM
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18w sot23 transistor
Abstract: pnp transistor 300v sot23 FMMT92CSM
Text: FMMT92CSM GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) FEATURES 0.76 ± 0.15 (0.03 ± 0.006)
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FMMT92CSM
-20mA
-10mA
-30mA
20MHz
18w sot23 transistor
pnp transistor 300v sot23
FMMT92CSM
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300V 500MA SOT23
Abstract: SMLA42CSM Silicon NPN High Voltage Transistor
Text: SMLA42CSM SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004)
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SMLA42CSM
OT23CSM
20MHz
300V 500MA SOT23
SMLA42CSM
Silicon NPN High Voltage Transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: FMMT92CSM GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 FEATURES 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004)
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FMMT92CSM
20MHz
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PDF
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FMMT92CSM
Abstract: 18w sot23 transistor
Text: FMMT92CSM GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 FEATURES 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004)
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FMMT92CSM
-100A
20MHz
FMMT92CSM
18w sot23 transistor
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PDF
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
MMBD2103
ZENER DIODE t2d
MMBD2101
MMBD2102
MMBD2104
SMD codes
bc107 TRANSISTOR SMD CODE PACKAGE SOT23
Transistor NEC 05F
BAT15-115S
NDS358N
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PDF
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
SMD Codes
TRANSISTOR SMD T1P
MMBD2104
BAW92
smd transistor A6a
schottky diode s6 81A
a4s smd transistor
Transistor SMD a7s
transistor SMD P2F
MMBD2101
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PDF
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C 12 PH Zener diode
Abstract: LT3468 G10 zener diode zener diode 4.2V LT342 kijima musen, sbl-5.6-1 Zener Diode SOT-23 LDT565630T-002 sbl-5.6-1 kijima
Text: LT3468/LT3468-1/LT3468-2 Photoflash Capacitor Chargers in ThinSOT TM U FEATURES DESCRIPTIO • The LT 3468/LT3468-1/LT3468-2 are highly integrated ICs designed to charge photoflash capacitors in digital and film cameras. A patented control technique* allows for the
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LT3468/LT3468-1/LT3468-2
3468/LT3468-1/LT3468-2
LT3468
LT3468-2
LT3468-1
l3420/LT3420-1
LTC3425
QFN-32
LTC3440/LTC3441
600mA/1A
C 12 PH Zener diode
LT3468
G10 zener diode
zener diode 4.2V
LT342
kijima musen, sbl-5.6-1
Zener Diode SOT-23
LDT565630T-002
sbl-5.6-1
kijima
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481
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OCR Scan
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MMBT2369
BC818-16
BC818-25
BC818-40
BC848A
BC848B
BC848C
BCW31
BCW32
BCW33
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PDF
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Untitled
Abstract: No abstract text available
Text: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA
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OCR Scan
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350mA
380MHz
650MHz
600MHz
200mA
300MHz
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: Illl iFFi mi SEME SMLA42CSM LAB SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches L FEATURES • HIGH BREAKDOWN VOLTAGE 1.40 (0 .055) 1.02 ± 0.10 max • LOW SATURATION VOLTAGES (0.04 1 0 .004)
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OCR Scan
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SMLA42CSM
OT23CSM
500mA
20MHz
200ns
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PDF
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WL SOT23
Abstract: LAB SOT23 SOT23CSM
Text: Illl WL m m am SEME « • • h 'M M SMLA42CSM LAB SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches (0.02 ± 0.004) n 4 I * 3 FEATURES 3.05*0.13 (0.12*0.005) A - 1.02 ± 1.40 (0.056) max. 0.10
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OCR Scan
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SMLA42CSM
OT23CSM
100nA
20MHz
200fo
WL SOT23
LAB SOT23
SOT23CSM
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PDF
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