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    302GB12E4S Price and Stock

    SEMIKRON SEMIX302GB12E4S

    Igbt Module, Dual, 1.2Kv, 463A; Continuous Collector Current:463A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX302GB12E4S
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    Newark SEMIX302GB12E4S Bulk 6
    • 1 -
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    • 100 $138.95
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    • 10000 $138.95
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    Richardson RFPD SEMIX302GB12E4S 1
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    SEMIKRON SEMIX302GB12E4S 27890120

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
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    TME SEMIX302GB12E4S 27890120 1
    • 1 $460.52
    • 10 $363.35
    • 100 $327.43
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    302GB12E4S Datasheets Context Search

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    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c