quadrant photodiode rca

Contextual Info: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .

Contextual Info: E G 8. G/ CANADA/ OPTOELEK M7E D 303Dbl0 OODOBEb b • CANA HAD Series 1100A T-W-67 Features • Built-in High Speed Amplifier • Groundable Case • Shielded Amplifier • Offset Null Control • Wide Spectral Range • Large Active Area Operating Data and Specifications at 23°C

Contextual Info: E G & G/CANADA/OPTOELEK SGD/YAG Series: 47E D • 303Dbl0 00D032M 2 ■ CANA Multi-Element T-V/-53 Features • • • Cross Talk > 1 % Between Elements Oxide Passivated Wide Spectral Range • • • Planar Diffused Structure Wide Spectral Range Linearity Over Wide Dynamic Range

Contextual Info: G & G / CANADA/OPTOELEK Æ• n ■ m 10E D ■ Electro b # ■ Optics *1 :ï ■a T C86045EV1 M C86045EV2 The RCA C86045 and C86053 series are InGaAsP laser diodes designed specifically for fiber optic test systems. The output wavelength 1300 nm is well

gaseous lasers

Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Contextual Info: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using

SIECOR Fiber Optic cable

Abstract: EG*G Optoelectronics 2sa 1300 equivalent c30617e Siecor C860XXE-12 C30654 C30617 Siecor 62.5 SIECOR Fiber Optics
Contextual Info: E G & 6 /CANADA/ OPTOELEK 47E » • 303DblG 00002=13 h ■ E O S iG CANA C86075E & OPTOELECTRONICS C86082E Series T - v t - e i C86082E Series C86075E Series HI“ - Dual-in-Line Package with Single or

Contextual Info: itesi E G & G/ CANADA/ OPTOELEK IO D • 3G3DblO OGGG11S Electro Optics 266 «CANA Photodiode C30872 DATA SHEET Large Area Silicon Avalanche Photodiode for General-Purpose Applications IHigh Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm