305 MOSFET TRANSISTOR Search Results

305 MOSFET TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

305 MOSFET TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2306 N-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S6	Original	OT-23 CJ2306 OT-23 to150	PDF
dc-ac converter royer Abstract: 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v Text: AN1722 APPLICATION NOTE Design and Realization of a CCFL Application Using TSM108, STN790A, or STS3DPFS30, and STSA1805 1. ABSTRACT This technical document shows how to use the integrated circuit TSM108, the PNP power bipolar transistor STN790A, or the P channel power MOSFET STS3DPFS30, the NPN power bipolar transistor	Original	AN1722 TSM108, STN790A, STS3DPFS30, STSA1805 STSA1805 1N5821 dc-ac converter royer 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v	PDF
fdb28n30tm Abstract: FDB28N30 Text: UniFETTM FDB28N30 tm N-Channel MOSFET 300V, 28A, 0.129Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDB28N30 FDB28N30 fdb28n30tm	PDF
OUTLINE DIMENSIONS in inche Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to	Original	ZXTP2027F -100V, ZXTN2018F OUTLINE DIMENSIONS in inche marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA	PDF
smd transistor marking zg Abstract: transistor smd zG TRANSISTOR SMD MARKING zg 2n7002bkv NXP SMD mosfet MARKING CODE NXP SMD TRANSISTOR MARKING CODE s1 2N7002BKV/DG/B2115 Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET	Original	2N7002BKV OT666 AEC-Q101 smd transistor marking zg transistor smd zG TRANSISTOR SMD MARKING zg 2n7002bkv NXP SMD mosfet MARKING CODE NXP SMD TRANSISTOR MARKING CODE s1 2N7002BKV/DG/B2115	PDF
TRANSISTOR SMD MARKING zg Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET	Original	2N7002BKV OT666 AEC-Q101 771-2N7002BKV115 2N7002BKV TRANSISTOR SMD MARKING zg transistor smd zG TRANSISTOR SMD MARKING CODE zg	PDF
Dual N-Channel mosfet sot-363 Abstract: marking code k7k DMN601DWK DMN601DWK-7 marking code k7k transistor Text: DMN601DWK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET SOT-363 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Min Max A 0.10 0.30	Original	DMN601DWK OT-363 DMN601DWK-7 3000/Tape com/datasheets/ap02007 DS30656 Dual N-Channel mosfet sot-363 marking code k7k DMN601DWK DMN601DWK-7 marking code k7k transistor	PDF
marking s1 sot363 Abstract: DMN601DWK DMN601DWK-7 Text: DMN601DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage	Original	DMN601DWK OT-363 J-STD-020C DS30656 marking s1 sot363 DMN601DWK DMN601DWK-7	PDF
DMN5L06DMK Abstract: No abstract text available Text: DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data N EW PRODU CT Features • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance	Original	DMN5L06DMK AEC-Q101 OT-26 J-STD-020C DS30927 DMN5L06DMK	PDF
DMN5L06DMK Abstract: No abstract text available Text: DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance	Original	DMN5L06DMK AEC-Q101 OT-26 J-STD-020C DS30927 DMN5L06DMK	PDF
k7k transistor Abstract: transistor k7k marking K7K transistor marking code k7k transistor Text: DMN601DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed	Original	DMN601DMK OT-26 OT-26 J-STD-020C MIL-STD-202, DS30657 k7k transistor transistor k7k marking K7K transistor marking code k7k transistor	PDF
smd transistor marking z8 Abstract: 771-2N7002BKM315 Text: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench	Original	2N7002BKM OT883 SC-101) AEC-Q101 771-2N7002BKM315 2N7002BKM smd transistor marking z8	PDF
Untitled Abstract: No abstract text available Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 1 — 10 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET	Original	2N7002BKV OT666 AEC-Q101	PDF
Untitled Abstract: No abstract text available Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET	Original	2N7002BKV OT666 AEC-Q101	PDF

d 434 mosfet Abstract: T0220AB mosfet 345 T0-220AB mosfet MOSFET N BUK854-500IS 200B 100a mosfet MOSFET 606 Text: P hilip s S e m ico n d u cto rs Index PowerMOS Transistors including TOPFETs and IGBTs ¡PAGE \| TYPE NUMBER \|TECHNOLOGY ENVELOPE BUK100-50DL TOPFET T0220AB 24 BUK100-50GL TOPFET T0220AB 32 BUK100-50GS TOPFET T0220AB 41 BUK101-50DL TOPFET T0220AB 50 BUK101-50GL	OCR Scan	BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L d 434 mosfet T0220AB mosfet 345 T0-220AB mosfet MOSFET N BUK854-500IS 200B 100a mosfet MOSFET 606	PDF
12 volt dc to 220 volt ac inverter 1000 watts Abstract: 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit Text: BIPOLAR TRANSISTORS EXCEL IN OFF-LINE RESONANT CONVERTERS Prepared by Jim Spangler, Applications Engineer Motorola Semiconductor Products Inc Phoenix, Az. Reprinted with permission of POWERTECHNICS, March, 1986 issue. 1986 Darnell Research Inc. All rights reserved.	OCR Scan	AR181/D 12 volt dc to 220 volt ac inverter 1000 watts 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit	PDF
Untitled Abstract: No abstract text available Text: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM	OCR Scan	cr122 340F-03 O-247) O-251)	PDF
1262C Abstract: No abstract text available Text: L H 1262C B /C A C SIEM EN S Dual Photovoltaic MOSFET Driver Preliminary Data Sheet FEATURES • High open circuit voltage • High short circuit current • High I/O isolation voltage • Logic compatible input • High reliability D im ensions in Inches mm	OCR Scan	1262C 18-pln typ135 fl535t	PDF
Untitled Abstract: No abstract text available Text: Provisional Data Sheet No. PD - 9.1722 International IOR Rectifier IRFE210 dv/dt R A TED J ANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF: M IL-PRF-19500/556] R E P E T IT IV E A VA LA N CH E A N D N -C H A N N E L 200Volt, 1.512, HEXFET Product Summary	OCR Scan	IRFE210 ANTX2N6784U JANTXV2N6784U MIL-PRF-19500/556] 200Volt,	PDF
IRF641 Abstract: IRF643 IRF841 PFC55 Text: El 3875081 d F \| 3ö7SDöi DaiagsT a \|~ G E SOLID Standard Power M O S FE T s STATE 01E 1 8 3 59 D IRF641, IRF643 F ile N u m b e r 1585 Power MOS Field-Effect Transistors	OCR Scan	IRF641, IRF643 IRF641 IRF841 PFC55	PDF
transistor rf m 9860 Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490 Text: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for	OCR Scan	520MHz RD30HUF1 520MHz 25deg Jun008 RD30HUF1 transistor rf m 9860 equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490	PDF
Untitled Abstract: No abstract text available Text: PD - 9.683A International Ek>ri Rectifier IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve	OCR Scan	IRGBC40U O-220AB 60Emitter TQ-220AB S5452	PDF
2N7224 JANTXV Abstract: 3000CL 2N7224 IRFM150 Text: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM150 SN7SS4 JANTXSN7SS4 JANTXV2N7224 ;n N-CHANNEL [REF: M IL-S-19500/59S] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International	OCR Scan	IRFM150 MIL-S-19500/595] IRFM150D IRFM150U O-254 MIL-S-19500 S5M52 2N7224 JANTXV 3000CL 2N7224 IRFM150	PDF
MOTOROLA N-Channel MOSFET 3-334 Abstract: 3-336 motorola MTH20N15 YI45M RF1MB Case 197A-02 VDE 0660 AN569 MTM20N15 S150 Text: MOTOROLA SC IME D I b3b7254 QGôTiQG 4 I XSTRS/R F 7 ~~3 ? - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTH2 0 N15 MTM2 0 N15 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS T M O S P O W ER F E T s 20 A M P E R E S	OCR Scan	3b7254 MTH20N15 MTM20N15 to-218ac MOTOROLA N-Channel MOSFET 3-334 3-336 motorola YI45M RF1MB Case 197A-02 VDE 0660 AN569 MTM20N15 S150	PDF

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305 MOSFET TRANSISTOR Search Results

305 MOSFET TRANSISTOR Result Highlights (5)

305 MOSFET TRANSISTOR Datasheets Context Search

Untitled

dc-ac converter royer

fdb28n30tm

OUTLINE DIMENSIONS in inche

smd transistor marking zg

TRANSISTOR SMD MARKING zg

Dual N-Channel mosfet sot-363

marking s1 sot363

DMN5L06DMK

DMN5L06DMK

k7k transistor

smd transistor marking z8

Untitled

Untitled

d 434 mosfet

12 volt dc to 220 volt ac inverter 1000 watts

Untitled

1262C

Untitled

IRF641

transistor rf m 9860

Untitled

2N7224 JANTXV

MOTOROLA N-Channel MOSFET 3-334