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    Kyocera AVX Components UCQ30A03-TE24L2

    DIODE SCHOTTKY 30V 30A TO263LP
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    GCT Semiconductor Inc BD120-30-A-0305-0229-L-B

    HEADER DUAL 1.27MM VERT T-H 30PO
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    GCT Semiconductor Inc BD125-30-A-0305-0580-L-B

    HEADER DUAL 1.27MM VERT SMT 30PO
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    GCT Semiconductor Inc 10-30-A-0304-C-4-08-4-T

    1MM PITCH FFC, 30 CONTACTS, A TY
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    GCT Semiconductor Inc 05-30-A-0304-A-4-06-4-T

    CABLE FFC/FPC 30POS 0.5MM 11"
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    30A03 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    30A-030A IC Sensors TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable Scan PDF
    30A-030D IC Sensors OEM Pressure Sensor Differential PC Board Mountable Serialized Scan PDF
    30A-030D IC Sensors TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable Scan PDF
    30A-030G IC Sensors TO-8 Series Pressure Sensor Selection Guide, PC Board Mountable Scan PDF
    30A-030G IC Sensors OEM Pressure Sensor Differential PC Board Mountable Serialized Scan PDF

    30A03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FCH30A03L

    Abstract: A03L
    Text: SBD T y p e : FCH30 FCH30A0 30A03L A03L OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.75g Symbol 30A03L


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    FCH30A03L O-220AB FCH30A03L A03L PDF

    30A03L

    Abstract: A03L FCH30A03L
    Text: SBD T y p e : FCH30 FCH30A0 30A03L A03L OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.75g Symbol 30A03L


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    FCH30 FCH30A0 30A03L O-220AB FCH30A03L A03L FCH30A03L PDF

    Untitled

    Abstract: No abstract text available
    Text: SBD T y p e : FCH30 FCH30A0 30A03L A03L OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.75g Symbol 30A03L


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    FCH30 FCH30A0 30A03L O-220AB FCH30A03L PDF

    Untitled

    Abstract: No abstract text available
    Text: Commercial SRAM Products 256Kx8, 25 - 70ns, DIP 30A036-01 C 2 Megabit High Speed CMOS SRAM DPS256S8AP DESCRIPTION: The DPS256S8AP is a high speed 256K x 8 high-density, low-power static RAM module comprised of two high speed ceramic 128K x 8 monolithic SRAM’s, an advanced high-speed CMOS


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    256Kx8, 30A036-01 DPS256S8AP DPS256S8AP 600-mil-wide, 32-pin 500mV PDF

    Dense-Pac Microsystems

    Abstract: DPS128X32XJ3 32-256K
    Text: Military SRAM Products 128Kx8, 15 - 35ns, LCC/JLCC 30A037-01 B 4 Megabit High Speed CMOS SRAM DPS128X32XJ3 ADVANCED INFORMATION DESCRIPTION: The DPS128X32XJ3 is a 128K x 8 “J” Leaded Ceramic Surface Mount Module. It contains four individual 128K x 8 SRAMs, packaged in their own hermetically


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    128Kx8, 30A037-01 DPS128X32XJ3 DPS128X32XJ3 I/O31 30A210-00 Dense-Pac Microsystems 32-256K PDF

    A03L

    Abstract: No abstract text available
    Text: SBD T y p e : FCH30 FCH30A0 30A03L A03L OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.75g Symbol 30A03L


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    FCH30 FCH30A0 30A03L O-220AB FCH30A03L A03L PDF

    Untitled

    Abstract: No abstract text available
    Text: Militay SRAM Products 128Kx8, 15 - 35ns, LCC/JLCC 30A037-01 B 1 Megabit High Speed CMOS SRAM DPS128M8En DESCRIPTION: The DPS128M8En is a very high speed 128K x 8 Static Random Access Memory SRAM fabricated with a CMOS silicon gate process. The memory utilizes


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    128Kx8, 30A037-01 DPS128M8En DPS128M8En PDF

    30021

    Abstract: L48C L41C IC L44C DATASHEET L30C l31c L43C ORSO42G5 ORSO82G5 ORT42G5
    Text: ORCA ORSO42G5 and ORSO82G5 0.6 - 2.7 Gbps SONET Backplane Interface FPSCs August 2005 Data Sheet Introduction Lattice has extended its family of high-speed serial backplane devices with the ORSO42G5 and ORSO82G5 devices. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSO42G5 and


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    ORSO42G5 ORSO82G5 ORSO82G5 ORSO42G5-1BMN484I ORSO82G5-2FN680I 30021 L48C L41C IC L44C DATASHEET L30C l31c L43C ORT42G5 PDF

    AD30102

    Abstract: E3P15
    Text: ORCA ORT42G5 and ORT82G5 06 to 3.7 Gbits/s XAUI and FC FPSCs March 2004 Data Sheet Introduction Lattice Semiconductor has developed a family of next generation FPSCs intended for high-speed serial backplane data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the


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    ORT42G5 ORT82G5 ORT82G5 ORT42G5-2BM484I ORT42G5-1BM484I ORT82G5-2BM680I ORT82G5-1BM680I AD30102 E3P15 PDF

    ORCA ORT42G5

    Abstract: No abstract text available
    Text: ORCA ORT42G5 and ORT82G5 3.7 Gbits/s XAUI and 4.25 Gbits/s FC FPSCs November 2003 Data Sheet Introduction Lattice Semiconductor has developed a family of next generation FPSCs intended for high-speed serial backplane data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the


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    ORT42G5 ORT82G5 ORT82G5 ORT42G5-2BM484ES ORT42G5-1BM484ES ORT82G5-2BM680I ORT82G5-1BM680I ORCA ORT42G5 PDF

    AL437

    Abstract: L97c L235C L103T L41C L140C L94C l165c L239C L43C
    Text: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC November 2003 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two


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    8b/10b OIF-SPI4-02 ORSPI4-1FE1036IES ORSPI4-F1156IES ORSPI4-2FE1036CES ORSPI4-1FE1036CES ORSPI4-2F1156CES ORSPI4-1F1156CES AL437 L97c L235C L103T L41C L140C L94C l165c L239C L43C PDF

    L67c

    Abstract: L41C l44c L71C l75c transistor l57c IC L44C DATASHEET l31c L47c l51c
    Text: ORCA ORT42G5 and ORT82G5 06 to 3.7 Gbits/s XAUI and FC FPSCs February 2004 Data Sheet Introduction Lattice Semiconductor has developed a family of next generation FPSCs intended for high-speed serial backplane data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the


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    ORT42G5 ORT82G5 ORT82G5 ORT42G5-2BM484ES ORT42G5-1BM484ES ORT82G5-2BM680I ORT82G5-1BM680I ORT42G5 L67c L41C l44c L71C l75c transistor l57c IC L44C DATASHEET l31c L47c l51c PDF

    p 32 lcc 300 r

    Abstract: 32-PIN Dense-Pac Microsystems
    Text: 30A03 7-01 B DENSE FAC 1 Megabit High Speed CM O S SRAM MICROSYSTEMS DPS128M8En PRELIMINARY DESCRIPTION: The DPS128M8En is a very high speed 12 8 K x 8 Static Random Access M em ory SRAM fabricated w ith a CMOS silicon gate process. The memory utilizes asynchronouscircuitryand may be maintained in any


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    30A03 DPS128M8En DPS128M8En 128Kx 32-PAO 32-PIN California92841-1428 G001b5fi p 32 lcc 300 r Dense-Pac Microsystems PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 0A 0 3 7-01 B DENSE-PAC 1 Megabit High Speed CMOS SRAM DPS128M8En MICROSYSTEMS PRELIMINARY DESCRIPTION: The DPS128M8En is a very high speed 128K x 8 Static Random Access Memory SRAM fabricated with a CMOS silicon gate process. The memory utilizes asynchronouscircuitryand may be maintained in any


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    DPS128M8En DPS128M8En California92841-1428 30A037-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: D PS5 1 2 S8 P 512KX8 CMOS SRAM MODULE DESCRIPTION: T h e D P S 512 S 8P is a 5 1 2K X 8 high-density, low-power static RAM module comprised of four 12 8 K X 8 m o no lithic S R A M 's, an advanced high-speed C M O S d e co d er and deco up ling capacitors surface mounted on a co-fired ceramic


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    512KX8 DPS512S8P 600-mil-wide, 32-pin A0-A18 DPS512S8P 100ns 120ns 150ns PDF

    Untitled

    Abstract: No abstract text available
    Text: DPS256S8AN Dense-Pac Microsystems, Inc. O HIGH SPEED MILITARY 256K X 8 CMOS SRAM MODULE ADVANCED INFORMATION DESCRIPTION: The DPS256S8AN is a high speed military 256K X 8 high-density, low-power static RAM module comprised of two high speed ceramic 128K X 8 monolithic


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    DPS256S8AN DPS256S8AN 600-mil-wide, 32-pin 30A036-31 PDF

    Untitled

    Abstract: No abstract text available
    Text: □PM DPS256S8P Dense-Pac Microsystems, Inc. 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The D P S256 S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 1 2 8 K X 8 m o no lithic SR A M 's, an advanced high-speed C M O S d e co d er and deco upling


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    DPS256S8P DPS256S8P 600-mil-wide, 32-pin S256S8P 120ns 150ns PDF

    DPS512S8AP

    Abstract: 165001
    Text: DENSE PAC 4 Megabit High Speed CMOS SRAM M I C R O S Y S T E M S DPS512S8AP DESC RIPTIO N: The DPS512S8AP is a high speed 5 1 2K x 8 high-density, lo w -p o w e r static RAM m odule comprised of four high speed ceramic 128K x 8 monolithic SRAM's, an advanced high-speed CMOS


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    DPS512S8AP DPS512S8AP 600-mil-wide, 32-pin 00017aa 165001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Dense-Pac Microsystems, Inc. ^ O DPS128M8 CERAMIC 128K X 8 CMOS SRAM MONOLITHIC DESCRIPTION: The D PS128M 8 is a m o n o lith ic 128K X 8 Static Random Access M em o ry SRAM fabricated using C M O S technology. It is designed fo r use in high density, high speed, lo w po w e r applications. All pins


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    DPS128M8 PS128M DPS128M 32-pin 32-Pad PDF

    Untitled

    Abstract: No abstract text available
    Text: □PM 4 Megabit High Speed CM OS SRAM Dense-Pac Microsystems. Inc. ^ DPS512S8AP DESCRIPTION: The D P S51 2 S8 A P is a high speed 512K X 8 high-density, low-power static RAM module comprised of four 128K X 8 monolithic SRAM's, an advanced high-speed CM OS decoder and decoupling capacitors


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    DPS512S8AP DPS512S8AP 600-mil-wide, 32-pin PS512S8A 30A03441 PDF

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 1 Megabit High Speed CMOS SRAM DPS128M8En PRELIM INARY DESCRIPTION: The DPS128M8En is a very high speed 128K x 8 Static Random Access Memory SRAM fabricated with a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be maintained in any


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    DPS128M8En DPS128M8En DP5128M 3QA037-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 2 Megabit CMOS SRAM DPS256S8P/DPS256S8PL/DPS256S8PLL DESCRIPTION: The DPS256S8P/PL/PLL is a 256K x 8 high-density, low-power static RAM module comprised of two 128K x 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors surface


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    DPS256S8P/PL/PLL TheDPS256S8P/PL/PLL 600-mil-wide, 32-pin DPS256S8P/DPS256S8PL/DPS256S8PLL 500mV 30A036-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: DPE6434 64K X 32 CMOS EEPROM MODULE DESCRIPTION: The DPE6434 is a high-performance Electrically Erasable and Programmable Read O nly M emory EEPRO M module and may be organized as 64K X 32, 128K X 16 or 256K X 8. The module is built with eight low-power C M O S 32K X 8


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    DPE6434 DPE6434 PE6434 16-bit 32-bit E6434 64-BW 500mV PDF

    Untitled

    Abstract: No abstract text available
    Text: □ P r ò Dense-Pac * Microsystems. Inc ^ 2 Megabit High Speed CM OS SRAM DPS256S8AP DESCRIPTION: The DPS256S8AP is a high speed 256K X 8 high-density static RAM module comprised of two 128K X 8 monolithic SRAM's, an advanced high-speed CM OS decoder and decoupling capacitors surface mounted


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    DPS256S8AP OPS256S8AP 600-mil-wide, 32-pin DPS256S8AP 3QA036O1 PDF