cts 10mhz oscillator
Abstract: UART Program Examples DL000D 10MHZ 16MHZ DSA003646 mitsubishi cm10
Text: Rev.1.0 Mitsubishi microcomputers M16C / 30L Group Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M16C/30L group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin plastic molded QFP.
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16-BIT
M16C/30L
M16C/60
100-pin
M16hnologies
cts 10mhz oscillator
UART Program Examples
DL000D
10MHZ
16MHZ
DSA003646
mitsubishi cm10
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LUCENT DSP1610
Abstract: mip 4140 DSP1610 Simulator DSP1605 DSP1609 RMM2 user guide PT 10000 lucent DSP 312C0
Text: Information Manual June 1998 DSP1609 Digital Signal Processor For additional information, contact your Microelectronics Group Account Manager or the following: http://www.lucent.com/micro INTERNET: docmaster@micro.lucent.com E-MAIL: N. AMERICA: Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103
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DSP1609
30L-15P-BA,
DSP1609
LUCENT DSP1610
mip 4140
DSP1610 Simulator
DSP1605
RMM2 user guide
PT 10000
lucent DSP
312C0
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dsp16a
Abstract: LUCENT DSP1610 finder timer type 15.21 XAB 316 intel crc circuits hardwired polynomials YL1010 54175 DSP1616 LUCENT DSP1610 data sheet dsp16a user guide
Text: Information Manual January 1998 DSP1611/17/18/27/28/29 Digital Signal Processor For additional information, contact your Microelectronics Group Account Manager or the following: INTERNET: http://www.lucent.com/micro E-MAIL: docmaster@micro.lucent.com N. AMERICA: Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103
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DSP1611/17/18/27/28/29
30L-15P-BA,
DSP1611/17/18/27/28/29
dsp16a
LUCENT DSP1610
finder timer type 15.21
XAB 316
intel crc circuits hardwired polynomials
YL1010
54175
DSP1616
LUCENT DSP1610 data sheet
dsp16a user guide
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finder timer type 15.21
Abstract: 54175 lucent DSP DSP1617 YL16 DSP1618 eccp dsp16a user guide
Text: Information Manual January 1998 DSP1611/17/18/27/28/29 Digital Signal Processor For additional information, contact your Microelectronics Group Account Manager or the following: INTERNET: http://www.lucent.com/micro E-MAIL: docmaster@micro.lucent.com N. AMERICA: Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103
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DSP1611/17/18/27/28/29
30L-15P-BA,
finder timer type 15.21
54175
lucent DSP
DSP1617
YL16
DSP1618 eccp
dsp16a user guide
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DL000D
Abstract: TB1S 10MHZ 16MHZ CM04
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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DL000D
Abstract: 03751 10MHZ 16MHZ
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Electrical Remote Control Curtain System
Abstract: 2033 C1200H 3 phase, 415v and 45 kw motor 380V 415v motor 2030-RLSPG 2032-A0210F 2033T 2030PC 2030-RLSHG
Text: Bulletin 2030-SG002A-EN-P ElectroGuard Bulletin 2030 Safety Isolation System Selection Guide Safety Isolation System ElectroGuard Overview . . . . . . . . . . . . . . . . . . . . . . 12-2 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2
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2030-SG002A-EN-P
Ame32)
D-74834
2030-SG002A-EN-P
Electrical Remote Control Curtain System
2033
C1200H
3 phase, 415v and 45 kw motor
380V 415v motor
2030-RLSPG
2032-A0210F
2033T
2030PC
2030-RLSHG
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2033
Abstract: 380V 415v motor fusible 65k 2032-A0420C-29J 2032-A0210F 2031-A0420F
Text: Safety Isolation System ElectroGuard Overview . . . . . . . . . . . . . . . . . . . . . . 12-2 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 Non Combination Systems for North America . . . 12-4 Non Combination Systems
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Untitled
Abstract: No abstract text available
Text: NU MB ER 0A * M IN PS DU D CT C AN PA TO CE RA LE L RA µH LEL N RA CE T DC ED C PA PA URR RA L R RE AL ENT LEL L . SI E M ST L D A X 0 A . MA C . (A MP IN MP X. ( S) O DU S CT DC HMS TO ANC SER ) E IE LE (µ S R H) RA ANC E TE DC D CU SE R SE RR IES MA RIES ENT
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4448R
-102M
to134L
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DA 2688
Abstract: 102M SE
Text: NU MB ER 0A * M IN PS DU D CT C AN PA TO CE RA LE L RA µH LEL N RA CE T DC ED C PA PA URR RA L R RE AL ENT LEL L . SI E M ST L D A X 0 A . MA C . (A MP IN MP X. ( S) O DU S CT DC HMS TO ANC SER ) E IE LE (µ S R H) RA ANC E TE DC D CU SE R SE RR IES MA RIES ENT
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4448R
-102M
to134L
DA 2688
102M SE
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Surface Mount
Abstract: DA 2688 MP 130l 102M SE
Text: API_newlayouts_single:APIcatalog_newlayouts 8/26/10 9:36 AM Page 76 s or ct du In er w Po CE AN ST S SI HM RE O M DC DC MU ES ) ES XI RI A ERI MPS S SE M D (A TE M U CE RA XIM AN MA ER T OL EN T ES RI ) RR SE (µH CU DC E S NC . MP TA ST 0 ADUC ESI ) R MS
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4448R
MIL-STD-202,
4448-102M
-102M
to134L
Surface Mount
DA 2688
MP 130l
102M SE
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mps 0952
Abstract: DA 2688 102M SE
Text: s or ct du In er w Po CE AN ST S SI HM RE O M DC DC U M ES ) ES XI RI A ERI MPS S SE M D (A TE UM CE RA XIM AN MA ER T L EN TO ES RI ) RR SE H CU µ ( DC E S NC . MP TA ST 0 ADUC ESI ) R MS IN DC (OH EL M LL MU DC RA XI EL M PA MA LL U RA XIM PA A D TM
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4448R
MIL-STD-202,
4448-102M
-102M
to134L
mps 0952
DA 2688
102M SE
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - PldB = 45 dBm at 5.3 GHz to 5.9 GHz
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TIM5359-30L
TIM5359-30L
MW50680196
TCH7250
0Q22432
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power * P-idB = 45 dBm at 4.4 GHz to 5.0 GHz
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TIM4450-30L
IM4450-30L
MW50550196
002237b
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TIM5053-30L
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-30L TECHNICAL DATA FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po =34.5 dBm Single Carrier Level ■ HIGH POWER P i dB =45 dBm at 5.0 GHz to 5.3 GHz ■ HIGH GAIN G1dB =9 dB at 5.0 GHz to 5.3 GHz
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TIM5053-30L
TIM5053-30L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA M ICROW AVE POWER MICROWAVE SEMICONDUCTOR GaAs FET T IM 5359-30L TECHNICAL DATA FEATURES : • HIGH GAIN G u b = 8.5 dB at 5.3 GHz to 5.9 GHz ■ LOW INTERM ODULATIO N DISTORTION I M 3 = —45 dBc at Po = 34.5 dBm, Single Carrier Level ■ BROAD BAND INTERNALLY MATCHED
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5359-30L
dB160
TIM5359-30L
TIM5359-30L
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microwave fet IC
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE MICROWAVE POWER G aAs FET S E M IC O N D U C T O R TIM 4450-30L TECHNICAL DATA FEATURES: LOW INTERM O D ULA TIO N DISTORTION I M 3 = —45 dBc at Po = 34.5 dBm, Single Carrier Level G 1dB = at ^ .4 Hz to 5-0 GHz BROAD BAND INTERNALLY MATCHED
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4450-30L
TIM4450-30L------TIM4450-30L
microwave fet IC
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30L 128
Abstract: No abstract text available
Text: TO SHIBA I M IC R O W A V E P O W E R | MICROWAVE SEMICONDUCTOR GaAs FET TIM 6472 30L TECHNICAL DATA FEATURES : • LOW INTERM O D ULA TIO N DISTORTION I M 3 = - 4 3 dBc at Po = 34.5 dBm, Single Carrier Level ■ HIGH POWER P-jdB = 4 4 . 5 dBm at 6.4 GHz to 7.2 GHz
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TIM6472-30L
TIM6472-30L
30L 128
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 45 d B m a t 5 .3 G H z to 5.9 G H z
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TIM5359-30L
MW50680196
TIM5359-30L
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k 03j2
Abstract: No abstract text available
Text: V v . " - > . • 1 TYPETCX v ^ A,-.r V" Extended Tem perature Range Computer Grade Capacitor O FEATURES: •Long Life • Low ESR •105°C • High Ripple Current The TCX capacitor m anufactured by Aerovox is designed as a high perform ance capacitor of long life com puter grade quality and reliability. Type TCX capacitors provide low
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250L2C
TCX151M
250L3C
TCX271M
TCX181M
TCX391M
k 03j2
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Untitled
Abstract: No abstract text available
Text: Bé h H| h M i •MÉrifli IH BIT 128K WORD x 8 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531001CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro
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TC531001CP/CF
120ns
150ns
TC531001CP-12,
TC531001
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Untitled
Abstract: No abstract text available
Text: a M/HITE /M IC R O E L E C T R O N IC S 128Kx32 EEPROM MODULE WE128K32-XG2X PRELIMINARY* FEATURES * Access Times of 150nS to 300nS • 5 Volt Power Supply ■ Packaging • G8-lead Hermetic CQFP, 22.4 mm (.8B0 inch square ■ Guilt in Decoupling Caps and Multiple Ground Pins for Low
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WE128K32-XG2X
128Kx32
150nS
300nS
256Kxl6
512KxB
128Kx
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EDI88130CS25CB
Abstract: No abstract text available
Text: ^ED I _ EDI88130CS Electronic Designs Inc.i High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory
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EDI88130CS
128Kx8
EDI88130LPS)
EDI88130CS25CB
DI881
30CS25CC
30C325CI
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gal 16v8 programming algorithm
Abstract: GAL16V8 application notes gal16v8 national National SEMICONDUCTOR GAL16V8 gal 16v8 programming specification GAL16V8-25 25L90 gal programming algorithm GAL16V8-25L 16L8* GAL
Text: GAL16V8 National iCA Semiconductor GAL16V8 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per formance CMOS process with electrically erasable floating gate technology. This programmable memory technology
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GAL16V8
GAL16V8
20-pin
gal 16v8 programming algorithm
GAL16V8 application notes
gal16v8 national
National SEMICONDUCTOR GAL16V8
gal 16v8 programming specification
GAL16V8-25
25L90
gal programming algorithm
GAL16V8-25L
16L8* GAL
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