30MHZ MOSFET 12V Search Results

30MHZ MOSFET 12V Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

30MHZ MOSFET 12V Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RD06HHF1-101 Abstract: mosfet HF amplifier RD06HHF1 RD 15 hf mitsubishi 10Turns RD06HHF Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 3.6+/-0.2 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz	Original	RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-101 mosfet HF amplifier RD 15 hf mitsubishi 10Turns RD06HHF	PDF
RD06HHF1 Abstract: RD06HHF1-101 RD06HHF 10TURNS 40gp0 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz	Original	RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-or RD06HHF1-101 RD06HHF 10TURNS 40gp0	PDF
MAR 618 transistor Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz	Original	RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-th MAR 618 transistor MAR 737 transistor d 1557 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231	PDF
RD 15 hf mitsubishi Abstract: RD06HHF1-101 RD06HHF Text: < Silicon RF Power MOS FET Discrete > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING RD06HHF1 is a MOS FET type transistor specifically 1.3+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz	Original	RD06HHF1 30MHz RD06HHF1 30MHz RD06HHF1-101 Oct2011 RD 15 hf mitsubishi RD06HHF	PDF
rd16hhf1 Abstract: RD16HHF1 application notes Rd16hhf Text: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz 30MHz RD16HHF1 RD16HHF1 application notes Rd16hhf	PDF
RD16HHF1 Abstract: RD16HHF RD16HHF1 application notes RD16HHF1-101 RD16H PO-20W Text: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-101 Oct2011 RD16HHF RD16HHF1 application notes RD16H PO-20W	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING RD06HHF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz	Original	RD06HHF1 30MHz RD06HHF1 30MHz	PDF
RD70HHF1 Abstract: No abstract text available Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 24.0+/-0.6 FEATURES 4-C2 •High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz	Original	RD70HHF1 30MHz 30MHz RD70HHF1	PDF
erf7530 Abstract: 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR Text: ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP DESCRIPTION The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the HF frequency range. High power in a TO-218 package for an excellent ‘watt per dollar’ value. TO-218 PACKAGE OUTLINE & MARKINGS	Original	ERF7530 30MHz ERF7530 O-218 30MHz 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR	PDF
transistor t06 Abstract: 828 TRANSISTOR equivalent Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINEDRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	RD00HHS1 30MHz RD00HHS1 30MHz 48MAX 53MAX transistor t06 828 TRANSISTOR equivalent	PDF
transistor t06 Abstract: RD00HHS1-101 lal04na1r0 RD00HHS1 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA Text: ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	RD00HHS1 30MHz RD00HHS1 30MHz transistor t06 RD00HHS1-101 lal04na1r0 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA	PDF
c 879 transistor Abstract: transistor t06 TRANSISTOR 7533 mosfet HF amplifier RD00HHS1 a 933 transistor f-30MHz 933 TRANSISTOR Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1	Original	RD00HHS1 30MHz RD00HHS1 30MHz c 879 transistor transistor t06 TRANSISTOR 7533 mosfet HF amplifier a 933 transistor f-30MHz 933 TRANSISTOR	PDF
LAL04NA Abstract: RD00HHS1-101 transistor t06 DD 127 D TRANSISTOR mosfet HF amplifier RD00HHS1 S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET T06 transistor FET 355 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	RD00HHS1 30MHz RD00HHS1 30MHz LAL04NA RD00HHS1-101 transistor t06 DD 127 D TRANSISTOR mosfet HF amplifier S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET T06 transistor FET 355	PDF
RD16HHF1 Abstract: RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet	PDF

16HHF1 Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz 16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF	PDF
LAL04NA Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	RD00HHS1 30MHz RD00HHS1 30MHz LAL04NA T113 mosfet HF amplifier RD00HHS1-101 3M Touch Systems	PDF
RD16HHF1 equivalent Abstract: RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet RD16HHF1 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1 equivalent RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING	PDF
RD16HHF1 Abstract: RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1th RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8	PDF
RD70HHF Abstract: RD70HHF1 mosfet HF amplifier idq10 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD70HHF1 30MHz RD70HHF1 30MHz RD70HHF1-101 RD70HHF mosfet HF amplifier idq10	PDF
RD16HHF1 application notes Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1or RD16HHF1 application notes RD16HHF RD16HHF1-101 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE	PDF
RD70HHF Abstract: RD70HHF1-101 RD70HHF1 10Turns mosfet HF amplifier TRANSISTOR D 1765 738 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD70HHF1 30MHz RD70HHF1 30MHz RD70HHF1-101 RD70HHF RD70HHF1-101 10Turns mosfet HF amplifier TRANSISTOR D 1765 738	PDF
transistor 1765 Abstract: rd100hhf1 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 24.0+/-0.6 FEATURES 4-C2 •High power and High Gain:	Original	RD100HHF1 30MHz 30MHz RD100HHF1 transistor 1765	PDF
RD70HHF1 Abstract: TRANSISTOR D 1765 738 RD70HHF a 1757 transistor hf power transistor mosfet TRANSISTOR D 1765 mosfet HF amplifier rd70 MITSUBISHI RF POWER MOS FET TRANSISTOR 0931 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD70HHF1 30MHz RD70HHF1 30MHz TRANSISTOR D 1765 738 RD70HHF a 1757 transistor hf power transistor mosfet TRANSISTOR D 1765 mosfet HF amplifier rd70 MITSUBISHI RF POWER MOS FET TRANSISTOR 0931	PDF
RD100HHF1 Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD100HHF1 30MHz RD100HHF1 30MHz TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w	PDF

30MHZ MOSFET 12V Search Results

30MHZ MOSFET 12V Result Highlights (5)

30MHZ MOSFET 12V Datasheets Context Search

RD06HHF1-101

RD06HHF1

MAR 618 transistor

RD 15 hf mitsubishi

rd16hhf1

RD16HHF1

Untitled

RD70HHF1

erf7530

transistor t06

transistor t06

c 879 transistor

LAL04NA

RD16HHF1

16HHF1

LAL04NA

RD16HHF1 equivalent

RD16HHF1

RD70HHF

RD16HHF1 application notes

RD70HHF

transistor 1765

RD70HHF1

RD100HHF1