TO-3P weight
Abstract: ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16
Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)
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30N50P
30N50PS
PLUS220
TO-3P weight
ixys ixfh 30n50p
QG SMD TRANS
PLUS220SMD
123B16
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ixys ixfh 30n50p
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)
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30N50P
30N50PS
PLUS220
ixys ixfh 30n50p
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IXFR32N50
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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ISOPLUS247TM
30N50Q
32N50Q
30N50
32N50
32N50
247TM
IXFR32N50
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IXFR32N50
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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ISOPLUS247TM
30N50Q
32N50Q
30N50
32N50
32N50
125OC
IXFR32N50
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 30N50P VDSS ID25 RDS on Electrically Isolated Back Surface = 500 V = 17 A ≤ 225 mΩ Ω N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings
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30N50P
ISOPLUS220TM
E153432
405B2
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30n50
Abstract: No abstract text available
Text: Photoelectric sensors FZAM 30N5002 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 300 . 1500 mm alignment / soiled lens indicator
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30N5002
30n50
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator
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30N5003
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator
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30N5003
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Untitled
Abstract: No abstract text available
Text: Ultrasonic sensors UEDK 30N5103 Ultrasonic through beam sensors dimension drawing 30 18,4 LED 13 4,5 37,4 65 23 Pot ø 13,2 11,4 14 20 general data photo emitter / receiver receiver sensing range sd 0 . 700 mm scanning range far limit Sde 0 . 700 mm
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30N5103
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing
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30N5004
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Untitled
Abstract: No abstract text available
Text: Ultrasonic sensors UEDK 30N5103/S14 Ultrasonic through beam sensors dimension drawing 30 18,4 LED 11 4,5 37,4 65 23 Pot 11,4 M12 x 1 20 14 general data photo emitter / receiver receiver sensing range sd 0 . 700 mm scanning range far limit Sde 0 . 700 mm
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30N5103/S14
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Untitled
Abstract: No abstract text available
Text: Ultrasonic sensors UEDK 30N5103 Ultrasonic through beam sensors dimension drawing 30 18,4 LED 13 4,5 37,4 65 23 Pot ø 13,2 11,4 14 20 general data photo emitter / receiver receiver sensing range sd 0 . 700 mm scanning range far limit Sde 0 . 700 mm
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30N5103
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing
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30N5004
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30N50
Abstract: IXFR32N50
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions
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ISOPLUS247TM
32N50
30N50
30N50
IXFR32N50
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Untitled
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR
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30N50P
30N50PS
O-247
30N50P
O-247
PLUS220
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C-15
Abstract: No abstract text available
Text: 30N5P 88.9±0.2 C1.5 8.6MAX 1 30 2.54±0.2 7.62±0.2 0.5±0.1 29✕2.54=73.66±0.4 4±0.5 13.2MAX 12.2±0.12 Dimensions in mm 0.25±0.1 Mar.’98
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30N5P
C-15
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS on trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings
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30N50P
30N50PS
O-247
30N50P
O-247
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RFP-30N50T-S
Abstract: No abstract text available
Text: Model RFP-30N50T-S RoHS Compliant Aluminum Nitride Termination 30 Watts, 50Ω General Specifications Resistive Element Substrate Cover Lead s Operating Temperature Thick film Aluminum Nitride ceramic Alumina ceramic 99.9% pure silver (.005” thick) -55 to +150°C (see de rating chart)
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RFP-30N50T-S
MIL-E-5400.
30N50T-S
RFP-30N50T-S
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator
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30N5003
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Untitled
Abstract: No abstract text available
Text: 30N5Q Dimensions in mm 30 2.54±0.2 0.5±0.1 18MAX 1 5.0MAX 4±0.5 17.2±0.2 78.9±0.2 0.25±0.1 2.62±0.2 29✕2.54=73.66±0.4 Mar.’98
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30N5Q
18MAX
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing
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30N5004
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FZAM 30N5002 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 300 . 1500 mm alignment / soiled lens indicator
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30N5002
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fast IXFX
Abstract: MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q
Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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30N50Q
32N50Q
247TM
O-264
125OC
728B1
fast IXFX
MD 202
TO-264-aa
TO-268
transistor tl 187
IXFK
125OC
32N50Q
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32N50
Abstract: 30n50
Text: H iPerFET Power M O SFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 30N50 IXFH 32N50 p V DSS ^D25 500 V 30 A 0.16 f i 500 V 32 A trr £ 250 ns 0.15 Û DS on Preliminary data Sym bol Test C onditions V DSS Tj = 2 5 °C to 1 5 0 °C
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OCR Scan
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30N50
32N50
32N50
5A/25
6A/25
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