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    30N50 Search Results

    30N50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SiT1602BC-31-30N-50.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-83-30N-50.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-13-30N-50.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-22-30N-50.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-71-30N-50.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SF Impression Pixel

    30N50 Price and Stock

    Rochester Electronics LLC STY30N50E

    NFET T0264 SPCL 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STY30N50E Bulk 5,550 58
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    Nisshinbo Micro Devices RP130N501D-TR-FE

    IC REG LINEAR 5V 150MA SOT23-5
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    DigiKey RP130N501D-TR-FE Cut Tape 2,985 1
    • 1 $0.53
    • 10 $0.454
    • 100 $0.3394
    • 1000 $0.20604
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    Littelfuse Inc IXTH30N50L2

    MOSFET N-CH 500V 30A TO247
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    DigiKey IXTH30N50L2 Tube 893 1
    • 1 $30.94
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    • 100 $25.65
    • 1000 $24.047
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    Littelfuse Inc IXFH30N50Q3

    MOSFET N-CH 500V 30A TO247AD
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    DigiKey IXFH30N50Q3 Tube 367 1
    • 1 $13.05
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    • 100 $10.56667
    • 1000 $9.01269
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    Newark IXFH30N50Q3 Bulk 300
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    • 1000 $10.31
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    Littelfuse Inc IXTT30N50L2

    MOSFET N-CH 500V 30A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT30N50L2 Tube 275 1
    • 1 $17.53
    • 10 $17.53
    • 100 $14.18833
    • 1000 $12.1019
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    Newark IXTT30N50L2 Bulk 300
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    Find more 30N50 price and stock on Findchips.com

    30N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-3P weight

    Abstract: ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16
    Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)


    Original     		PDF 30N50P 30N50PS PLUS220 TO-3P weight ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16

    ixys ixfh 30n50p

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)


    Original     		PDF 30N50P 30N50PS PLUS220 ixys ixfh 30n50p

    IXFR32N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50

    IXFR32N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 30N50P VDSS ID25 RDS on Electrically Isolated Back Surface = 500 V = 17 A ≤ 225 mΩ Ω N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N50P ISOPLUS220TM E153432 405B2

    30n50

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5002 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 300 . 1500 mm alignment / soiled lens indicator


    Original     		PDF 30N5002 30n50

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator


    Original     		PDF 30N5003

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator


    Original     		PDF 30N5003

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing


    Original     		PDF 30N5004

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing


    Original     		PDF 30N5004

    30N50

    Abstract: IXFR32N50
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions


    Original     		PDF ISOPLUS247TM 32N50 30N50 30N50 IXFR32N50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C


    Original     		PDF 30N50 32N50 125OC

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR


    Original     		PDF 30N50P 30N50PS O-247 30N50P O-247 PLUS220

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS on trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N50P 30N50PS O-247 30N50P O-247

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator


    Original     		PDF 30N5003

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing


    Original     		PDF 30N5004

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5002 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 300 . 1500 mm alignment / soiled lens indicator


    Original     		PDF 30N5002

    fast IXFX

    Abstract: MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q
    Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 30N50Q 32N50Q 247TM O-264 125OC 728B1 fast IXFX MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q

    30N50

    Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 247TM 125OC 30N50 32N50 32N50Q IXFR30N50 IXFR32N50

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5001 Fiber optic sensors & cables dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 600 mm sensing distance Tw 110 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator


    Original     		PDF 30N5001

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing


    Original     		PDF 30N5004

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing


    Original     		PDF 30N5004

    32n50

    Abstract: 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50
    Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C


    Original     		PDF 30N50 32N50 125OC 32n50 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50

    32N50

    Abstract: 30n50
    Text: H iPerFET Power M O SFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 30N50 IXFH 32N50 p V DSS ^D25 500 V 30 A 0.16 f i 500 V 32 A trr £ 250 ns 0.15 Û DS on Preliminary data Sym bol Test C onditions V DSS Tj = 2 5 °C to 1 5 0 °C


    OCR Scan     		PDF 30N50 32N50 32N50 5A/25 6A/25