Untitled
Abstract: No abstract text available
Text: AON7430 30V N-Channel MOSFET General Description Features The AON7430 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 20A
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AON7430
AON7430
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DEIC420
Abstract: DEIC420 RF MOSFET Gate Driver IC IXDD415SI 13.56Mhz class e power amplifier 13.56MHZ mosfet DE-275 EVIC420 1 ampere 15v transformer IXDD415
Text: DEIC420 20 Ampere Low-Side Ultrafast RF MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V
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DEIC420
TheDEIC420
45MHz,
DEIC420
DEIC420 RF MOSFET Gate Driver IC
IXDD415SI
13.56Mhz class e power amplifier
13.56MHZ mosfet
DE-275
EVIC420
1 ampere 15v transformer
IXDD415
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DEIC420
Abstract: DEIC420 RF MOSFET Gate Driver IC IXDD415SI DEIC420 application 13.56Mhz class e power amplifier power amplifier mosfet up to 50mhz "RF MOSFETs" DE-275 EVIC420 13.56MHZ mosfet
Text: DEIC420 20 Ampere Low-Side Ultrafast RF MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V
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DEIC420
TheDEIC420
45MHz,
DEIC420
DEIC420 RF MOSFET Gate Driver IC
IXDD415SI
DEIC420 application
13.56Mhz class e power amplifier
power amplifier mosfet up to 50mhz
"RF MOSFETs"
DE-275
EVIC420
13.56MHZ mosfet
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PDF
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DEIC420 RF MOSFET Gate Driver IC
Abstract: IXDD415
Text: DEIC420 20 Ampere Low-Side Ultrafast RF MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V
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DEIC420
TheDEIC420
45MHz,
DEIC420
DEIC420 RF MOSFET Gate Driver IC
IXDD415
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PDF
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DEIC421
Abstract: 13.56Mhz class e power amplifier mosfet driver 5v to 30v RF MOSFET Driver RF MOSFETs power amplifier mosfet up to 50mhz SMPS CIRCUIT DIAGRAM 5V 20A "RF MOSFETs" Class E power amplifier, 13.56MHz DEIC420 RF MOSFET Gate Driver IC
Text: DEIC421 RF MOSFET DRIVER 20 Ampere Ultrafast RF MOSFET Driver With Kelvin Connection Features • Built using the advantages and compatibility of CMOS and IXYS HDMOS processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V
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Original
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DEIC421
DEIC421
13.56Mhz class e power amplifier
mosfet driver 5v to 30v
RF MOSFET Driver
RF MOSFETs
power amplifier mosfet up to 50mhz
SMPS CIRCUIT DIAGRAM 5V 20A
"RF MOSFETs"
Class E power amplifier, 13.56MHz
DEIC420 RF MOSFET Gate Driver IC
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STW20NB50
Abstract: No abstract text available
Text: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STW20NB50
O-247
100oC
STW20NB50
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20NB50
Abstract: STW20NB50
Text: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW 20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING
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STW20NB50
O-247
20NB50
100oC
20NB50
STW20NB50
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STW20NB50
Abstract: No abstract text available
Text: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STW20NB50
O-247
100oC
STW20NB50
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PDF
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STW20NB50
Abstract: No abstract text available
Text: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STW20NB50
O-247
100oC
STW20NB50
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PDF
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STW20NB50
Abstract: No abstract text available
Text: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.27 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STW20NB50
O-247
100oC
STW20NB50
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AON6784
Abstract: No abstract text available
Text: AON6784 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6784 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6784
AON6784
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Untitled
Abstract: No abstract text available
Text: AON6782 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6782 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6782
AON6782
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AON6790
Abstract: No abstract text available
Text: AON6790 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6790 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6790
AON6790
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aon6780
Abstract: 30V85A
Text: AON6780 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6780 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6780
AON6780
30V85A
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AON6788
Abstract: No abstract text available
Text: AON6788 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON6788 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AON6788
AON6788
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Untitled
Abstract: No abstract text available
Text: AON6780 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6780 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6780
AON6780
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AON6786
Abstract: No abstract text available
Text: AON6786 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON6786 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AON6786
AON6786
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Untitled
Abstract: No abstract text available
Text: AO4714 30V N-Channel MOSFET 1234566576 General Description Product Summary TM SRFET AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4714
AO4714
Figure10:
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DFN 3.3X3.3
Abstract: 33X3
Text: AON7784 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON7784 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AON7784
AON7784
DFN 3.3X3.3
33X3
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AON6716L
Abstract: FET 4900
Text: AON6716L 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AON6716L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6716L
AON6716L
FET 4900
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Untitled
Abstract: No abstract text available
Text: AON6702 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON6702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AON6702
AON6702
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AON6704L
Abstract: No abstract text available
Text: AON6704L 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON6704L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AON6704L
AON6704L
CoAON6704L
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Untitled
Abstract: No abstract text available
Text: AON6722 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6722
AON6722
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STW20NB50
Abstract: No abstract text available
Text: STW20NB50 N - CHANNEL 500V - 0.22ft - 20A - TO-247 PowerMESH MOSFET TYPE V STW 20NB50 . . . . . . . dss 500 V R d S o i i < 0 .2 5 Q. Id 20 A TYPICAL RDs(on) = 0.22 £2 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STW20NB50
O-247
20NB50
O-247
P025P
STW20NB50
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