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    30V 50A MOSFET Search Results

    30V 50A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2270H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 3.4Mohm Lfpak Visit Renesas Electronics Corporation
    HAT2099H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 3.7Mohm Lfpak Visit Renesas Electronics Corporation
    RJK0391DPA-00#J53 Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 2.9Mohm Wpak Visit Renesas Electronics Corporation
    2SK2959-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 10Mohm To-220Ab Visit Renesas Electronics Corporation
    RJK03M1DPA-00#J5A Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 2.3Mohm Wpak Visit Renesas Electronics Corporation

    30V 50A MOSFET Datasheets Context Search

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    mdd1653

    Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
    Text: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching


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    PDF MDD1653 MDD1653 mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP

    MDD1653

    Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
    Text: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state


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    PDF MDD1653 MDD1653 MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R

    09N03

    Abstract: MEN09N03 MEN09N03BJ3 i 09N03 C430J3 09n0
    Text: CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET MEN09N03BJ3 BVDSS 30V ID 50A RDSON 9mΩ Features • VDS=30V, ID=50A, RDS ON =9mΩ • Low Gate Charge


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    PDF C430J3 MEN09N03BJ3 O-252 UL94V-0 09N03 MEN09N03 MEN09N03BJ3 i 09N03 C430J3 09n0

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 50A, 6.5mΩ General Description Features The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.


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    PDF MDD1654 MDD1654

    Untitled

    Abstract: No abstract text available
    Text: AON7428 30V N-Channel MOSFET General Description Product Summary The AON7428 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. ID (at VGS=10V) 30V 50A


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    PDF AON7428 AON7428

    Untitled

    Abstract: No abstract text available
    Text: AON7428 30V N-Channel MOSFET General Description Product Summary The AON7428 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. VDS 30V 50A ID (at VGS=10V)


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    PDF AON7428 AON7428

    AON7405

    Abstract: 30V 20A power p MOSFET
    Text: AON7405 30V P-Channel MOSFET General Description Product Summary The AON7405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. VDS -30V -50A ID (at VGS= -10V)


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    PDF AON7405 AON7405 30V 20A power p MOSFET

    n308ad

    Abstract: ISL9N308AD3ST N-308 35KP ISL9N308AD3
    Text: PWM Optimized ISL9N308AD3 / ISL9N308AD3ST N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


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    PDF ISL9N308AD3 ISL9N308AD3ST 2600pF O-251AA) O-252 O-252) n308ad ISL9N308AD3ST N-308 35KP

    n306ad

    Abstract: N306A ISL9N306AD3
    Text: ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


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    PDF ISL9N306AD3 ISL9N306AD3ST 3400pF n306ad N306A

    n306ad

    Abstract: N306A
    Text: PWM Optimized ISL9N306AD3ST/ ISL9N306AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


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    PDF ISL9N306AD3ST/ ISL9N306AD3 3400pF O-252 O-252) O-251AA) n306ad N306A

    n308ad

    Abstract: N-308
    Text: PWM Optimized ISL9N308AD3ST/ ISL9N308AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


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    PDF ISL9N308AD3ST/ ISL9N308AD3 2600pF O-252 O-252) O-251AA) n308ad N-308

    n306ad

    Abstract: N306A ISL9N306AD3 ISL9N306AD3ST
    Text: ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


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    PDF ISL9N306AD3 ISL9N306AD3ST 3400pF n306ad N306A ISL9N306AD3ST

    n312ad

    Abstract: No abstract text available
    Text: PWM Optimized ISL9N312AD3ST/ ISL9N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


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    PDF ISL9N312AD3ST/ ISL9N312AD3 1450pF O-252 O-252) O-251AA) n312ad

    N-308A

    Abstract: TO-252 MOSFET
    Text: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


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    PDF ISL9N308AD3ST 2600pF O-252 N-308A TO-252 MOSFET

    G2U4407

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/07/05 REVISED DATE : G2U4407 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 14m -50A Description The G2U4407 provide the designer with the best combination of fast switching, ruggedized device design, low


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    PDF G2U4407 G2U4407 O-262

    168E

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 50A, 30V N-CHANNEL POWER MOSFET  FEATURES * RDS ON < 14 mΩ @ VGS = 10 V, ID = 30 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified   SYMBOL ORDERING INFORMATION


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    PDF UT50N03 UT50N03L-TM3-T UT50N03G-TM3-T UT50N03L-TN3-R UT50N03G-TN3-R UT50N03L-TND-R UT50N03G-TND-R O-251 O-252 O-252D 168E

    CMT60N03

    Abstract: CMT60N03N252 CMT60N03N263 N-Channel MOSFET 40V 7A
    Text: CMT60N03 N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low Gate Charge Peak Current vs Pulse Width Curve VDSS RDS ON Typ. ID Inductive Switching Curves 30V 10.8mΩ 50A Improved UIS Ruggedness


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    PDF CMT60N03 O-252 O-263 CMT60N03 CMT60N03N252 CMT60N03N263 N-Channel MOSFET 40V 7A

    GU4407

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GU4407 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 14m -50A Description The GU4407 provide the designer with the best combination of fast switching, ruggedized device design, low


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    PDF GU4407 GU4407 O-263

    GE4407

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GE4407 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 14m -50A Description The GE4407 provide the designer with the best combination of fast switching, ruggedized device design, low


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    PDF GE4407 GE4407 O-220

    fs50smh-03

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50SMH-03 HIGH-SPEED SWITCHING USE FS50SMH-03 • 2.5V DRIVE • V dss . 30V .22mQ • ID . 50A


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    PDF FS50SMH-03 1CH23 fs50smh-03

    742 mosfet

    Abstract: No abstract text available
    Text: M ITSUBISHI Neh POW ER M OSFET FS50AS-03 HIGH-SPEED SW ITCHING USE FS50AS-03 • 10V DRIVE • V D S S .30V • ros ON (MAX) . 23mi2 • Id . 50A


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    PDF FS50AS-03 23mi2 571CH23 742 mosfet

    FS50A

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET ! FS50ASJ-03 | HIGH-SPEED SWITCHING USE FS50ASJ-03 • 4V D R IV E • VDSS . .30V • rDS ON (MAX) • •■• ■19mi2 .50A • Id . • Integrated Fast Recovery Diode (TYP.)


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    PDF FS50ASJ-03 19mi2 1CH23 FS50A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50SM-03 HIGH-SPEED SWITCHING USE FS50SM-03 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX 1.5 { 3.2 £ 5.45 0.6 oi 10V DRIVE V d s s . 30V rDS ON (MAX). 23mi2 I d . 50A


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    PDF FS50SM-03 23mi2

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50AS-03 HIGH-SPEED SWITCHING USE FS50AS-03 ' 10V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) .30V . 23mi2 .50A 60ns APPLICATION M otor control, Lamp control, Solenoid control


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    PDF FS50AS-03 23mi2