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    30V N CHANNEL MOS FET Search Results

    30V N CHANNEL MOS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    30V N CHANNEL MOS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2808-01MR

    Abstract: No abstract text available
    Text: 2SK2808-01MR N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		PDF 2SK2808-01MR 2SK2808-01MR

    2SK2806-01

    Abstract: No abstract text available
    Text: 2SK2806-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original     		PDF 2SK2806-01 2SK2806-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2808-01MR N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		PDF 2SK2808-01MR

    k 2750 MOSFET

    Abstract: L027
    Text: 2SK2688-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,017Ω ±50A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		PDF 2SK2688-01 277mH k 2750 MOSFET L027

    ups 017

    Abstract: 2SK2688-01
    Text: 2SK2688-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,017Ω ±50A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		PDF 2SK2688-01 ups 017 2SK2688-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2807-01L,S N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		PDF 2SK2807-01L

    12v power amplifier 30w

    Abstract: 2SK2807-01L
    Text: 2SK2807-01L,S N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original     		PDF 2SK2807-01L 12v power amplifier 30w

    2SK1609

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1609 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 500


    Original     		PDF 2SK1609 2SK1609

    2SK1606

    Abstract: A300012 1086v
    Text: Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 450


    Original     		PDF 2SK1606 2SK1606 A300012 1086v

    2SK1612

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1612 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 800


    Original     		PDF 2SK1612 2SK1612

    2SK1608

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1608 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 500


    Original     		PDF 2SK1608 2SK1608

    2SK1605

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 450


    Original     		PDF 2SK1605 2SK1605

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 4.0±0.1 4.5±0.2 900 V VGSS ±30


    Original     		PDF 2SK1613

    2SK1611

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic ■ Applications Unit VDSS 800 V Gate to Source voltage VGSS ±30 V DC


    Original     		PDF 2SK1611 2SK1611

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1605

    2SK1614

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss, 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1614 capacitance155' 2SK1614

    2SK1606

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1606 -150V, 2SK1606

    2SK1613

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1613 capacitance155' 2SK1613

    2SK1610

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1610 2SK1610

    IRLA 075

    Abstract: 2SK1940-01 2SK1940 SC-65 T151 s48a 6avs LM050 ups S
    Text: 2.SK1940-01 FUJI POW ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIA SERIES Outline Drawings I Features 'High speed switching ' L ow on-resistance 'N o secondary breakdown ' Low driving power 'High voltage •V gs - ± 30V Guarantee 'Avalanche-proof


    OCR Scan     		PDF 2SK1940-01 SC-65 IRLA 075 2SK1940-01 2SK1940 SC-65 T151 s48a 6avs LM050 ups S

    tz 1008-01

    Abstract: mosfet kt 208 A277 T151 fci dh 22 U101a
    Text: ÍSK1008-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -n SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • Islo secondary breakdown • Low driving power • High voltage • 7 gss = ± 30V Guarantee • Avalanche-proof


    OCR Scan     		PDF SK1008-01 SC-46 tz 1008-01 mosfet kt 208 A277 T151 fci dh 22 U101a

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1607

    2SK1612

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1612 Silicon N-Channel Power F-MOS Unit : rrnn I Features 4.2±0.2 ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic 03.1±O.1 I Applications ►High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1612 2SK1612

    2SK series

    Abstract: 25C1 2SK1020 T151 3CA H
    Text: 2SK1020 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V g ss~ ± 30V Guarantee ■Applications


    OCR Scan     		PDF 2SK1020 2SK series 25C1 2SK1020 T151 3CA H