49181
Abstract: TA 49181 4918 2SJ362
Text: Ordering number:EN4918 P-Channel Silicon MOSFET 2SJ362 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ362] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5
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EN4918
2SJ362
2083B
2SJ362]
2092B
49181
TA 49181
4918
2SJ362
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2SK2273
Abstract: No abstract text available
Text: Ordering number:ENN5047 N-Channel Silicon MOSFET 2SK2273 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK2273] 0.16 0.95 0.95 2 1.9 2.9
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ENN5047
2SK2273
2SK2273]
2SK2273
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HPA251R
Abstract: No abstract text available
Text: Ordering number:ENN5033 NPN Triple Diffused Planar Silicon Transistor HPA251R Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions unit:mm 2111A [HPA251R] 20.0 5.0 20.7 3.0 2.0 26.0 • High speed tf typ=100ns .
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ENN5033
HPA251R
HPA251R]
100ns)
HPA251R
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2SK2273
Abstract: No abstract text available
Text: Ordering number:ENN5047 N-Channel Silicon MOSFET 2SK2273 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK2273] 0.16 0.95 0.95 2 1.9 2.9
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ENN5047
2SK2273
2SK2273]
2SK2273
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2SJ382
Abstract: No abstract text available
Text: Ordering number:EN5057 P-Channel Silicon MOSFET 2SJ382 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2083B [2SJ382] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5 1.6 0.8
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EN5057
2SJ382
2083B
2SJ382]
2092B
2SJ382
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Untitled
Abstract: No abstract text available
Text: 2SA1898 Ordering number : EN5049A SANYO Semiconductors DATA SHEET 2SA1898 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • High-speed switching. Features • • • • Adoption of FBET and MBIT processes. Large current capacity.
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2SA1898
EN5049A
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN5057 P-Channel Silicon MOSFET 2SJ382 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2083B [2SJ382] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5 1.6 0.8
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EN5057
2SJ382
2083B
2SJ382]
2092B
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2SJ420
Abstract: No abstract text available
Text: Ordering number:EN5064A P-Channel Silicon MOSFET 2SJ420 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2116 [2SJ420] 5 4 1.27 0.595 Specifications 0.43 0.1 1.5 5.0
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EN5064A
2SJ420
2SJ420]
2SJ420
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2SA1898
Abstract: MARKING AN
Text: Ordering number:5049 PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Application Applications Package Dimensions • High-speed switching. unit:mm 2038A Features [2SA1898] · Adoption of FBET and MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage.
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2SA1898
2SA1898]
2SA1898
MARKING AN
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2SA1898
Abstract: No abstract text available
Text: 2SA1898 Ordering number : EN5049A SANYO Semiconductors DATA SHEET 2SA1898 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • High-speed switching. Features • • • • Adoption of FBET and MBIT processes. Large current capacity.
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2SA1898
EN5049A
2SA1898
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be 49181
Abstract: 49181 41599TH 2SJ362 49182 TA 49181 240/ba 49181
Text: Ordering number:EN4918 P-Channel Silicon MOSFET 2SJ362 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ362] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5
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EN4918
2SJ362
2083B
2SJ362]
2092B
be 49181
49181
41599TH
2SJ362
49182
TA 49181
240/ba 49181
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FC155
Abstract: No abstract text available
Text: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one
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EN5063
FC155
FC155]
FC155
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2SA1898
Abstract: ITR05012 ITR05013 ITR05014
Text: Ordering number:ENN5049 PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Application Applications Package Dimensions • High-speed switching. unit:mm 2038A Features [2SA1898] · Adoption of FBET and MBIT processes. · Large current capacity.
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ENN5049
2SA1898
2SA1898]
25max
2SA1898
ITR05012
ITR05013
ITR05014
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FC155
Abstract: No abstract text available
Text: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one
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EN5063
FC155
FC155]
FC155
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fc155
Abstract: No abstract text available
Text: Ordering number: EN 5063 N o.5063 FC155 11 IP N P i E p itaxial P la n a r Silicon T ra n sis to r With bias resistances P N P E pitaxial P la n a r Silicon T ran sisto r Constant-Current Circuit Applications F eatu res • Com plex type of 2 devices (tra n s is to r with resistan c es and low s a tu ra tio n tran sistor) contained in one
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FC155
fc155
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31495MO
Abstract: transistor za
Text: O rdering num ber: EN 5063 No.5063 SA % Y O i I I _ I PNP Epitaxial Planar Silicon Transistor With bias FC155 resistances PNP Epitaxial Planar Silicon Transistor Constant-Current Circuit Applications F eatures
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FC155
-----15V
--10mA
--400mA
--50mA
--200mA,
--200mA
FC155
31495MO
transistor za
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2SJ420
Abstract: No abstract text available
Text: Ordering num ber: EN5064A 2SJ420 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications F e a tu re s • Low ON resistance. • U ltrahjgh-speed switching. • 2.5V drive. A b so lu te M axim um R a tin g s a tT a = 25°C Drain-to-Source Voltage
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EN5064A
2SJ420
1000mm2
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2SJ382
Abstract: No abstract text available
Text: Ordering num ber:EN 5057 2SJ382 No.5057 P-Channel MOS Silicon FET SAXYO i Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. - Very high-speed switching. • 2.5V drive. A b s o lu te M axim um R a tin g s a t Ta = 25°C Drain-to-Source Voltage
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2SJ382
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2SA1898
Abstract: MARKING AN
Text: Ordering number:EN 5049 _ 2SA1898 No.5049 PNP Epitaxial Planar Silicon Transistor DC/DC Converter A p p licatio n s • High-speed switching. F e a tu re s • Adoption of FBET and MBIT processes. • Large current capacity. •Low collector-to-emitter saturation voltage.
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2SA1898
250mm2
2SA1898
MARKING AN
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2SK22
Abstract: EN5047 2SK2273 TA-0067 b0401
Text: Ordering num ber:EN5047 2SK2273 N-Channel MOS Silicon FET No.5047 SAXYO Very High-Speed Switching Applications i F eatu res • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings atT a = 25°C Drain-to-Source Voltage
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EN5047
2SK2273
2SK22
TA-0067
b0401
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EN5049
Abstract: No abstract text available
Text: Ordering nurnbe-: EN5049 2SA1898 No.5049 P N P E p ita x ia l P l a n a r Silicon T r a n s i s to r DC/DC Converter A p p licatio n s • H ig h-sp eed sw itching. F e a tu re s • A doption of F B E T an d M B IT processes. • L a rg e c u r r e n t capacity.
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EN5049
2SA1898
31495MO
TA-0155
EN5049
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49181
Abstract: be 49181 EN4918 2SJ362 TA 49181 240/ba 49181
Text: Ordering number:EN4918 _ 2SJ362 N o.4918 P -C h an n el MOS Silicon FE T SAXYO I Very High-Speed Switching Applications F e a tu re s •Low ON resistan ce. • V ery high-speed sw itching. • Low-voltage drive. A b s o lu te M a x im u m R a tin g s a t T a = 25°C
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EN4918
2SJ362
10//S,
49181
be 49181
TA 49181
240/ba 49181
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50-33J
Abstract: HPA251R bx1462
Text: Ordering number: EN 5033 No.5033 H P A 251R NPN Triple Diffused P lanar Silicon T ransistor i V ery H igh-Definition Color D isplay Horizontal Deflection Output Applications F e a tu re s • High speed tf typ = 100ns . •H igh breakdow n voltage (Vcbo = 1500V).
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100ns)
50-33J
HPA251R
bx1462
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KCD03
Abstract: bx1462 1C16A HPA251R 31495MO
Text: Ordering n u m b e r:EN 5033 HPA251R No.5033 N PN Triple Diffused P lanar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F e a tu re s •High speed tf typ = 100ns . ■High breakdown voltage (Vcbo —1500V).
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HPA251R
100ns)
QQ2G44b
KCD03
bx1462
1C16A
HPA251R
31495MO
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