k 2645 MOSFET
Abstract: ECJ1VB1C105M IRF 244 MOSFET C1608X7R1H104KT ECJ1VB1C105K ECJ2FB0J106M ECJ3YB1C106M JMK212BJ106MG MAX8543 MAX8543EEE
Text: 19-3155; Rev 0; 5/04 Step-Down Controllers with Prebias Startup, Lossless Sensing, Synchronization, and OVP The MAX8543/MAX8544 current-mode, constant-frequency PWM buck controllers operate from a 3V to 13.2V input supply and generate adjustable 0.8V to 0.9
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MAX8543/MAX8544
MAX8543/MAX8544
k 2645 MOSFET
ECJ1VB1C105M
IRF 244 MOSFET
C1608X7R1H104KT
ECJ1VB1C105K
ECJ2FB0J106M
ECJ3YB1C106M
JMK212BJ106MG
MAX8543
MAX8543EEE
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Untitled
Abstract: No abstract text available
Text: 19-3155; Rev 0; 5/04 Step-Down Controllers with Prebias Startup, Lossless Sensing, Synchronization, and OVP Features The MAX8543/MAX8544 current-mode, constant-frequency PWM buck controllers operate from a 3V to 13.2V input supply and generate adjustable 0.8V to 0.9
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MAX8543/MAX8544
MAX8543/MAX8544
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C1608X7R1H104KT
Abstract: k 2645 MOSFET C5315 IRF 244 MOSFET power MOSFET IRF data
Text: 19-3155; Rev 0; 5/04 KIT ATION EVALU E L B A IL AVA Step-Down Controllers with Prebias Startup, Lossless Sensing, Synchronization, and OVP The MAX8543/MAX8544 current-mode, constant-frequency PWM buck controllers operate from a 3V to 13.2V input supply and generate adjustable 0.8V to 0.9
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MAX8543/MAX8544
MAX8543/MAX8544
C1608X7R1H104KT
k 2645 MOSFET
C5315
IRF 244 MOSFET
power MOSFET IRF data
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IRF 540 with gain 16.5
Abstract: MOSFET IRF 540 AS A SWITCH 33a sot23 diode IRf 48 MOSFET
Text: 19-3155; Rev 0; 5/04 KIT ATION EVALU E L B A IL AVA Step-Down Controllers with Prebias Startup, Lossless Sensing, Synchronization, and OVP The MAX8543/MAX8544 current-mode, constant-frequency PWM buck controllers operate from a 3V to 13.2V input supply and generate adjustable 0.8V to 0.9
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MAX8543/MAX8544
MAX8543/MAX8544
IRF 540 with gain 16.5
MOSFET IRF 540 AS A SWITCH
33a sot23 diode
IRf 48 MOSFET
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HVM10
Abstract: diode HVM12 HVM15 HVM12 HVM14 HVM16 HVP10 HVP12 HVP14 HVP16
Text: LESHAN RADIO COMPANY, LTD. HVM5 – HVM16 HVP5 – HVP16 HIGH – VOLTAGE DIODES MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase,half wave, 60Hz,resistive or inductive load. For capacitive load,derate current by 20%.
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HVM16
HVP16
HVM10
diode HVM12
HVM15
HVM12
HVM14
HVM16
HVP10
HVP12
HVP14
HVP16
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1N3154
Abstract: 1N3157 1N3157A JANTX1N3157-1 1n3155 RH3156 RH3157 RH3157A 1N3156
Text: 1N3154 thru 1N3157, A, -1 8.4 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes provides a selection of 8.4 V nominal voltages and temperature coefficients to
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1N3154
1N3157,
1N3157A
DO-204AA)
1N3157A
1N3157
JANTX1N3157-1
1n3155
RH3156
RH3157
RH3157A
1N3156
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Untitled
Abstract: No abstract text available
Text: 1N3154 thru 1N3157, A, -1, e3 8.4 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARAN CE The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes provides a selection of 8.4 V nominal voltages and temperature coefficients to
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1N3154
1N3157,
1N3157A
DO-20ge
1N3157A,
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1N3154
Abstract: 1N3157A JANTX1N3157-1 1N3157 RH3156 RH3157 RH3157A JANTX1N
Text: 1N3154 thru 1N3157, A, -1, e3 8.4 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes provides a selection of 8.4 V nominal voltages and temperature coefficients to
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1N3154
1N3157,
1N3157A
DO-204r
1N3157A,
JANTX1N3157-1
1N3157
RH3156
RH3157
RH3157A
JANTX1N
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powerex nd41
Abstract: No abstract text available
Text: ND413425 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: OUTLINE DRAWING Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated
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ND413425
ND413425
150oC
150oC
125oC
powerex nd41
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Untitled
Abstract: No abstract text available
Text: rz 7 SGS-THOMSON ^ 7 # [M û[M iajO T ô*S 1N 3 1 5 4 , 1 N 3157,A TEMPERATURE COMPENSATED ZENER DIODES • SEMICONDUCTOR MATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING s - " ' DO 35 (Glass) A B S O L U T E R A TIN G S (limiting values)
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IN3155
Abstract: IN3157 BL-5B IN3154 1n3156 1N3154 015G 12123 N3157 3155
Text: SbE ]> • 7 ^ 2 3 7 0041532 «S6TH s 6 S-TH4MS0N SCS-THOMSON !QJOT@«S 171 T- , h ° ^ 1N 3154,A-> 1N 3157,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values
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ZT10
Abstract: CI 4583 CI 4584 1N4681 1N4682 4776a
Text: D O 35 CB 102 Voltage reference diodes ( tem perature compensated ) DO 35 IZ T 4 m A V z t 6,4 V Ptot 9-4 W ( T amt> 50 ° C ) D iodes de référence de tension ( compensées en tem pérature ) D O 3 5 DRS 75 VZT* rZT* 'ZT Test temperatures avz (V> (S2)
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TOROIDS transformer
Abstract: GP 841 Diode
Text: AN ALO G D E V IC E S 5-Bit Programmable Triple Power Supply Controller for Pentium III Processors ADP3155 FEATURES Active V oltage Positioning w ith Gain and Offset A djustm ent O ptim al Com pensation for Superior Load Transient Response VRM 8.2, VRM 8.3 and VRM 8.4 Com pliant
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ADP3155
TSSOP-20
20-Lead
RU-20
TOROIDS transformer
GP 841 Diode
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in823a
Abstract: IN943B 1N941 3155a 1N942A IN821
Text: DIODES ZENER COMPENSÉES EN TEMPÉRATURE i * temperature compensateci zener diodes TY P ES * V ZT V >ZM (mA) min 'ZT nom max A V max. @ IZT pour A t (mV) rZT max. (mA) (£2) at At (10-5 rc) <°c> Boîtier Case autres tensions ou autres boîtiers, nous consulter. Please consult us for others voltages or others esses.
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3155a
Abstract: No abstract text available
Text: • 1N3154,1N3155,1N3156, AND 1N3157 AVAILABLE IN JAN, JANTX AND JANTXV • 1N3154-1,1N3155-1,1N3156-1, AND 1N3157-1 AVAILABLE INJAN, JANTX AND JANTXV 1N3154 thru 1N3157A and 1N3154-1 thru 1N3157A-1 • 8.4 VOLT NOMINAL ZENER VOLTAGE • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
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1N3154
1N3155
1N3156,
1N3157
1N3154-1
1N3155-1
1N3156-1,
1N3157A
3155a
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ana 650
Abstract: ana 650, SM 7525 1N4989 1N5388 20688 ed 8554
Text: Zener Regulator Diodes Micmsemj A Part Number i Microsemi Division ZEN 1N5387A 1N5387B SMBG5387B SMBJ5387B UZ4120 UZ5120 UZ5220 1N5388 1N5388A 1N5388B SMBG5388B SMBJ5388B 1N4989 JAN1N4989 JANS1N4989 JANTX1N4989 JANTXV1N4989 1N4989US JAN1N4989US JANS1N4989US
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ZEN-130
ana 650
ana 650,
SM 7525
1N4989
1N5388
20688
ed 8554
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in3155
Abstract: zener diode - C 10 ST 1N3154 1N3157A diode zener 718 1N3154A 1N3155 1N3156 1N3156A 1N3157
Text: 1775470 C O D I SEMICONDUCTOR I| TO INC 90D 0 0 5 5 7 D eT | 1775470 0Q00SS7 t, D • CODI Sem iconductor, Inc. 8.4 VOLT NOMINAL ZENER VOLTAGE 1N3154 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES thru 1N3157A «MAXIMUM RATINGS O p e ra tin g T e m p e ra tu re :
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0000S57
1N3154
1N3157A
500mW
1N3154
1N3154A
1U010I
1M01C-7A
in3155
zener diode - C 10 ST
1N3157A
diode zener 718
1N3155
1N3156
1N3156A
1N3157
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1N407E
Abstract: No abstract text available
Text: Zero-TC Reference Diodes Micmsemj I Part N um ber OTC M icrosem i ; P ackage i O u tlin e Division \ Type ; Mil Spec Pow er Data S h e e t ID W Vz (V) Izt <mA) «V z (%/C) Z zt (n ) IR i V R ! Toi. (uA ) ! 0 0 ;(+/-%) 1N4069 Scottsdale DD STD 2323 2 51 7 5
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OTC-18
1N407E
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MBR20030CTL
Abstract: MBR20025CTL R20025C
Text: MOTOROLA SC DIODES/OPTO b3fci72SS □0flb3Lci DSb b4E D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL POWERTAP SWITCHMODE Power R ectifiers . . using the S chottky B arrier prin ciple w ith a platin um barrier metal. These stateof-the-art devices have the fo llo w in g features:
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b3fci72SS
MBR20015CTL
MBR20020CTL
MBR20025CTL
MBR20030CTL
MBR20030CTL
MBR20025CTL,
R20025C
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Untitled
Abstract: No abstract text available
Text: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5G1 The F5G1 is an 880nm LED encapsulated in a clear, wide angle, sidelooker package. — D— * ï E f — I bi 1- 1 - 1 j-1 Green H? Color '¿b-— Code SECTION x -x LEAD PROFILE a I •* T i «•
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880nm
ST1334
ST1041
ST1046
ST1042
ST1045
ST1043
74bbflSl
ST1044
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Untitled
Abstract: No abstract text available
Text: 1N3154&A thru 1N3157 & A Mierdsemi Corp. ' Tfte diode experts SANTA A N A , CA SC O TTSD A LE, A Z For more inform ation call: 602 941-6300 FEATURES 8.4 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • ZENER VOLTAGE 8.4V ± 5 % (Sea Note Ij • 1N3154 THRU 1N3157 HAVE JAN. JANTX, JANTXV. AND -1 QUALIFICATIONS
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1N3154
1N3157
1N3157
MIL-S-19500/158
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Untitled
Abstract: No abstract text available
Text: 1N 3154& A thru 1N3157 & A M ierosemi Corp. y The diode experts SCOTTSDALE, A Z SANTA ANA, CA For more inform ation call: 602 941-6300 FEATURES 8.4 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • ZENER VOLTAGE 8.4V + 5% (See Note 1) • 1N3154 THRU 1N3157 HAVE JA N . JA N T X , JA N T X V . AND -1 Q UALIFICATIONS
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1N3157
1N3154
1N3157
IL-S-19500/158
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NTE519
Abstract: lenses
Text: DISCRETE LED INDICATORS diffused light are generally assumed to be more pleasing to the eye than the lenses that produce a highly-intense point of light. AC Operation LED’s should be operated in the forward direction only. Therefore, the LED circuit must provide reverse-voltage
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NTE519)
NTE519
NTE519
lenses
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Untitled
Abstract: No abstract text available
Text: MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD3154 thru CD3156 8.4 VOLT NOMINAL ZENER VOLTAGE ± 5% ELECTRICALLY SIMILAR TO 1N3154 THRU 1N3156 COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
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1N3154
1N3156
CD3154
CD3156
CD3154
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