Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5317 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.
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NX5317
NX5317EH)
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PX10160E
Abstract: No abstract text available
Text: LASER DIODE NX5317 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.
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NX5317
NX5317EH)
PL10609EJ01V0DS
PX10160E
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laser cutting circuit
Abstract: ARR01C120
Text: 120W CW Laser Diode Array Part Number: ARR01C120 DERRINGER TM • Packaged Laser Diode Array · Available With Any Silver BulletTM Configuration · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS MIN
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ARR01C120
785-1064nm
------120W
B-10/01
laser cutting circuit
ARR01C120
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ARR01C120
Abstract: No abstract text available
Text: Industrial Microphotonics Company 120W CW Laser Diode Array Part Number: ARR01C120 DERRINGER TM • Packaged Laser Diode Array · Available With Any Silver BulletTM Configuration · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
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ARR01C120
785-1064nm
------120t
laser2000
B-10/01
ARR01C120
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850 VCSEL
Abstract: OPV314 OPV314F OPV314Y OPV314YF OPV315 OPV315F OPV315YF PT50 current-30nA
Text: Vertical Cavity Surface Emitting Laser in FC Optical Sub-Assembly OPTEK Technology OPV314F, OPV314YF, OPV315F, OPV315YF • • • • • 850 nm VCSEL technology, up to 2.5 Gbps data rate High thermal stability with Microbead lens High optical coupling to MM fiber with FC style receptacle
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OPV314F,
OPV314YF,
OPV315F,
OPV315YF
OPV31XF
OPV31XYF
850nm
75-6g
850 VCSEL
OPV314
OPV314F
OPV314Y
OPV314YF
OPV315
OPV315F
OPV315YF
PT50
current-30nA
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • Current-controlled output current source with 5 input channels 2 selectable outputs for grounded laser diodes Output current per channel up to 200 mA Total output current up to 250 mA Rise time 1.0 ns / fall time 1.1 ns
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SSO24
T0800
T0800
28-Sep-01
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • Current-controlled output current source with 5 input channels 2 selectable outputs for grounded laser diodes Output current per channel up to 200 mA Total output current up to 250 mA Rise time 1.0 ns / fall time 1.1 ns
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SSO24
T0800
T0800
16-Oct-01
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Untitled
Abstract: No abstract text available
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.2, 2013-07-22 Final Power Management & Multimarket Edition 2013-07-22 Published by Infineon Technologies AG
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ESD103-B1-02
ESD103-B1-02ELS
ESD103-B1-02EL
TSLP-2-19,
-20-MK
TSLP-2-20
AN210:
FIN-24101
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • Low power, low voltage CMOS Rectifier, voltage limiter, clock extraction on-chip no battery Small size Factory laser programmable ROM Operating temperature range -40 to +125°C Radio Frequency (RF): 100 to 450 kHz Transmission options
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RF/16,
RF/32,
RF/40,
RF/50,
RF/64,
RF/80,
RF/100,
RF/128
e5530
128-Bit
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PDF
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TSLP-2-20
Abstract: nokia mobile phone schematic ESD103-B1-02ELS
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.0, 2013-05.07 Final Power Management & Multimarket Edition 2013-05.07 Published by Infineon Technologies AG
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ESD103-B1-02Series
ESD103-B1-02ELS
ESD103-B1-02EL
TSLP-2-19,
-20-MK
TSLP-2-20
AN210:
FIN-24101
nokia mobile phone schematic
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AN4001
Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
Text: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at
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AN4001
MRF151A
12MHz,
AN4001
laser diode spice model simulation
Class E amplifier
300 watt mosfet amplifier class AB
MRF transistor
PIN diode MACOM SPICE model
27.12MHz power amplifier
27.12Mhz
500 watt mosfet power amplifier circuit diagram
1000 watt mosfet power amplifier
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • • Current-controlled output current source / 3 input channels Low power consumption Output current per channel to 250 mA Total output current to 300 mA Rise time 1.0 ns / fall time 1.1 ns On-chip RF oscillator
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SSO16
T0815
T0815
07-Nov-01
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LASER DISTANCE METER
Abstract: IEC60825-1
Text: Machine Vision Development Kit Userguide 1. Product Overview Thank you for purchasing the Machine Vision Development Kit. The module in this kit emits a red spot or projection The Machine Vision Development Kit provides a reliable, industrial laser light source in the form
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660nm
660nm,
10V/240V
ISO9001
LASER DISTANCE METER
IEC60825-1
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diode hp 2800
Abstract: DIODES SC-70 MARKING C3 b3 sot323 marking code C4 Sot 23-5 HSMS-2820
Text: Surface Mount RF Schottky Diodes in SOT-323 SC-70 Technical Data HSMS-280A Series HSMS-281A Series HSMS-282A Series Features • Surface Mount SOT-323 Package • Low Turn-On Voltage (As Low as 0.34 V at 1 mA) • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level
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OT-323
SC-70)
HSMS-280A
HSMS-281A
HSMS-282A
diode hp 2800
DIODES SC-70 MARKING C3
b3 sot323
marking code C4 Sot 23-5
HSMS-2820
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45128
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • • Current-controlled output current source / 3 input channels Low power consumption Output current per channel to 250 mA Total output current to 300 mA Rise time 1.0 ns / fall time 1.1 ns On-chip RF oscillator
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SSO16
T0816
T0816
16-Nov-01
45128
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Untitled
Abstract: No abstract text available
Text: RF2317 LINEAR CATV AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2317 is a general purpose, low-cost high-linearity
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RF2317
RF2317
50MHz
1000MHz,
005GHz
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Untitled
Abstract: No abstract text available
Text: RF2317 3 LINEAR CATV AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description -A- The RF2317 is a general purpose, low-cost high-linearity
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RF2317
RF2317
50MHz
1000MHz,
005GHz
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Untitled
Abstract: No abstract text available
Text: RF2317 /,1 $5 &$79 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 3URGXFW 'HVFULSWLRQ -A- The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. The device is manufactured on an
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RF2317
RF2317
50MHz
1000MHz,
005GHz
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Untitled
Abstract: No abstract text available
Text: RF2317 • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2317 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an
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RF2317
RF2317
50MHz
1000MHz,
005GHz
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Untitled
Abstract: No abstract text available
Text: RF2317 • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2317 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an
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RF2317
RF2317
50MHz
1000MHz,
005GHz
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DATASHEET OF BJT 547
Abstract: Bjt 547 R1519 RF2317
Text: RF2317 3 LINEAR CATV AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description -A- The RF2317 is a general purpose, low-cost high-linearity
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RF2317
RF2317
50MHz
1000MHz,
005GHz
DATASHEET OF BJT 547
Bjt 547
R1519
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DATASHEET OF BJT 547
Abstract: RF2317 CATV amplifier transistor 001214
Text: RF2317 3 LINEAR CATV AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description -A- The RF2317 is a general purpose, low-cost high-linearity
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RF2317
RF2317
50MHz
1000MHz,
005GHz
DATASHEET OF BJT 547
CATV amplifier transistor
001214
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PDF
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Untitled
Abstract: No abstract text available
Text: RF2317 • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2317 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an
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RF2317
RF2317
50MHz
1000MHz,
005GHz
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Analog devices assembly code marking Information
Abstract: No abstract text available
Text: wmLEM h n PA H ECK w LAE RT DT Surface Mount RF Schottky Diodes in SOT-323 SC-70 Technical Data HSMS-280A Series HSMS-281A Series HSMS-282A Series Features • Surface Mount SOT-323 Package • Low Turn-On Voltage (As Low as 0.34 V at 1 mA) • Low FIT (Failure in Time)
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OT-323
SC-70)
HSMS-280A
HSMS-281A
HSMS-282A
OT-323
Analog devices assembly code marking Information
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