FMC141501-01
Abstract: k-band amplifier
Text: FMC141501-01 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC141501-01
31dBm
FMC141501-01
k-band amplifier
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microwave transmitter 10GHz
Abstract: LTC5588-1 J340 R2C marking 6SEPC680M LTC2630 LTC5588IPF-1 00J1 4J120 J1500
Text: LTC5588-1 200MHz to 6000MHz Quadrature Modulator with Ultrahigh OIP3 Description Features Frequency Range: 200MHz to 6000MHz n Output IP3: +31dBm Typical at 2140MHz Uncalibrated +35dBm Typical (User Optimized) n Single Pin Calibration to Optimize OIP3 n Low Output Noise Floor at 6MHz Offset:
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LTC5588-1
200MHz
6000MHz
31dBm
2140MHz
35dBm
10ns/17ns
24-Lead
microwave transmitter 10GHz
LTC5588-1
J340
R2C marking
6SEPC680M
LTC2630
LTC5588IPF-1
00J1
4J120
J1500
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Untitled
Abstract: No abstract text available
Text: RFAM9011 RFAM90111:1 SMT Transformer 450MHz TO 500MHz LOW NOISE/HIGH LINEARITY PA CONNECTORIZED MODULE Module, 2 RF Connectors, 1 DC Pin, 3 GND Pins 61.47 mm x 55.12 mm x 13.46 mm Features 5VOperation, 630mA High Output P1dB>+31dBm Low Noise Figure<0.5dB
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RFAM9011
RFAM90111
450MHz
500MHz
630mA
31dBm
45dBm
RFAM9011
500MHz.
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Hitachi DSA002749
Abstract: No abstract text available
Text: 2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675 Z 1st. Edition Aug. 1998 Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline
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2SK2922
ADE-208-675
31dBm,
Hitachi DSA002749
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2SK2794
Abstract: Hitachi DSA002780
Text: 2SK2794 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-465 1st. Edition Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 60 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elecro Static Discharge.
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2SK2794
ADE-208-465
31dBm,
2SK2794
Hitachi DSA002780
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12W SMD
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
12W SMD
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
50pcs)
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
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Untitled
Abstract: No abstract text available
Text: AM183031WM-Q4-R Oct 2010 Rev 3 DESCRIPTION AMCOM’s AM183031WM-Q4-R is part of the GaAs MMIC power amplifier series. It has 30dB gain, 31dBm output power over the 1.8 to 3.4GHz band. This MMIC is in a plastic package with both RF and DC leads at the bottom
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AM183031WM-Q4-R
AM183031WM-Q4-R
31dBm
31dBm
50-ohm
670mA,
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RF6509PCBA-410
Abstract: RF6509 900MHZ
Text: RF6509 Proposed 3.2V MODULE INTENDED TO INTEGRATE WITH 900MHZ AMR SOLUTIONS 1 RX Filter 31 30 29 2 Input V3S1 32 28 27 26 25 RX out/TX in Output V2S2 3 24 V1S2 4 23 V1S1 10 22 V2S1 5 Applications LNA Vcc TX Output Power: 27dBm TX Gain: 31dBm
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RF6509
900MHZ
27dBm
31dBm
32-Pin,
902MHz
928MHz
DS090817
RF6509PCBA-410
RF6509
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complementary symmetry amplifier 2-30 MHz ssb driver applications
Abstract: 513-MHz MGA-633P8 AT224-1 k 3366 57 LTC5584 LTC5588-1 LTC6409
Text: LTC5584 30MHz to 1.4GHz IQ Demodulator with IIP2 and DC Offset Control Description Features I/Q Bandwidth of 530MHz or Higher n High IIP3: 31dBm at 450MHz, 28dBm at 900MHz n High IIP2: 70dBm at 450MHz, 65dBm at 900MHz n User Adjustable IIP2 to >80dBm n User Adjustable DC Offset Null
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530MHz
31dBm
450MHz,
28dBm
900MHz
70dBm
65dBm
80dBm
complementary symmetry amplifier 2-30 MHz ssb driver applications
513-MHz
MGA-633P8
AT224-1
k 3366 57
LTC5584
LTC5588-1
LTC6409
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Untitled
Abstract: No abstract text available
Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC
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FMM5815X
5-20GHz
31dBm
FMM5815X
the17
FCSI0601M200
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0951P
Abstract: MGF0951P 60Ghz mitsubishi mgf
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
0951P
60Ghz
mitsubishi mgf
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901 704 16 08 55
Abstract: amplifier mmic 576 DC TO 18GHZ RF AMPLIFIER MMIC transistor zo 607 ZO 607 MA A004R AMMP-6425 DB21
Text: AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm
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AMMP-6425
AMMP-6425
18GHz
28GHz.
25GHz,
31dBm
AV02-0034EN
901 704 16 08 55
amplifier mmic 576
DC TO 18GHZ RF AMPLIFIER MMIC
transistor zo 607
ZO 607 MA
A004R
DB21
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FUJITSU SEMICONDUCTOR phemt
Abstract: mmic case styles power amplifier mmic
Text: FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 20dB (Typ.) High PAE: ηadd = 25% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815GJ is a packaged, high-gain, high linearity,
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FMM5815GJ-1
31dBm
FMM5815GJ
the17
FCSI0402M200
FUJITSU SEMICONDUCTOR phemt
mmic case styles
power amplifier mmic
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Untitled
Abstract: No abstract text available
Text: AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm
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AMMP-6425
AMMP-6425
18GHz
28GHz.
25GHz,
31dBm
AV02-0034EN
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968E
Abstract: No abstract text available
Text: AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm
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AMMP-6425
AMMP-6425
18GHz
28GHz.
25GHz,
31dBm
AV02-0034EN
968E
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
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blm11
Abstract: A601 S980D3
Text: High Frequency ICs High-Speed Transimpedance Amplifier Preliminary Data S980D3 Bipolar IC Features • data rate up to 0.622Gb/s • supply range from +4.5V to +5.5V • internal High-Pass-Filter • maximum input current 3 mApp -12 • input sensitivity -31dBm (BER=10 )
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S980D3)
622Gb/s
-31dBm
S980D3
BLM11
S980D3
blm11
A601
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Power Amplifier AM304031MM-TM DATASHEET Preliminary, January 2001 This document contains information on a product under development. The parametric information contains target parameters that are subject to change. DESCRIPTION AMCOM’s AM304031MM-TM is part of the GaAs MMIC power amplifier series. It has 34dB gain and 31dBm output
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AM304031MM-TM
31dBm
31dBm
50-ohm
29dBm
37dBm
40dBm
200mA
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Untitled
Abstract: No abstract text available
Text: RFSW6131 RFSW6131 F9999 SP3T SYMMETRIC SWITCH LF TO 6000MHZ Package: DFN, 8-pin, 1.5mm x 1.5mm V3 RF3 8 7 Features LF to 6000MHz Operation Symmetric SP3T Low Loss: 0.5dB 2GHz Isolation: 27dB (2GHz) High IP3: 56dBm P0.1dB: 31dBm (5V, 2.2GHz)
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RFSW6131
F9999
6000MHZ
6000MHz
56dBm
31dBm
RFSW6131
DS120606
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FET K 1358
Abstract: 951P MGF0951P
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> PRELIMINARY M G F0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
FET K 1358
951P
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Untitled
Abstract: No abstract text available
Text: P, ,f?TQI, FMC141501-01 r UJ11jU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 31dBm Typ. High Gain: G-ih r = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC141501-01
UJ11jU
31dBm
FMC141501-01
12dBm
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MGF0913A
Abstract: No abstract text available
Text: / \ MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm TYP. @ f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
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