ST32F32
Abstract: ST32F320 arm gsm Firmware interface GSM iso 7816-2 320kByte
Text: ST32F320 Smartcard MCU with 32-bit ARM Cortex M3 CPU and 320 Kbyte high-density Flash memory Data brief Features Hardware features • ARM Cortex™-M3 32-bit RISC core ■ 8 Kbytes of user RAM ■ 320 Kbytes of user Flash memory with OTP area: – 10-year data retention
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ST32F320
32-bit
10-year
16-bit
ST32F32
ST32F320
arm gsm
Firmware interface GSM
iso 7816-2
320kByte
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Untitled
Abstract: No abstract text available
Text: ST32F320-M M2M MCU with 32-bit ARM Cortex M3 CPU and 320 Kbyte high-density Flash memory Data brief Features Hardware features • ARM Cortex™-M3 32-bit RISC core ■ 8 Kbytes of user RAM ■ 320 Kbytes of user Flash memory with OTP area: – 10-year data retention at 105°C, or 15
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ST32F320-M
32-bit
10-year
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240x320
Abstract: FPD95320 LTPS 320x480
Text: FPD95320 320-Channel LTPS/CGS Driver with Partial Display Memory and MPL-1 Interface General Description Features The FPD95320 is a 320–channel LTPS/CGS driver with Partial Display Memory, a 18-bit RGB video interface and enhanced display quality. It provides 320 output source drivers
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FPD95320
320-Channel
FPD95320
18-bit
400-bit
240x320
LTPS
320x480
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JESD22-b103
Abstract: ST32F320-M ST32F320 a102 transistor JESD22-B104 ST32F32 JESD22-A104 microcontroller interface with gsm module JESD22-A101 JESD22-A102
Text: ST32F320-M M2M MCU with 32-bit ARM Cortex M3 CPU and 320 Kbyte high-density Flash memory Data brief Features Hardware features • ARM Cortex™-M3 32-bit RISC core ■ 8 Kbytes of user RAM ■ 320 Kbytes of user Flash memory with OTP area: – 10-year data retention at 105°C, or 15
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ST32F320-M
32-bit
10-year
JESD22-b103
ST32F320-M
ST32F320
a102 transistor
JESD22-B104
ST32F32
JESD22-A104
microcontroller interface with gsm module
JESD22-A101
JESD22-A102
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Untitled
Abstract: No abstract text available
Text: ST21F320 Smartcard MCU with 320 Kbytes of high-density Flash memory Data brief Features Hardware features • Enhanced 8/16-bit CPU core with 16 Mbytes of linear addressable memory ■ 7 Kbytes of User RAM ■ 320 Kbytes of User Flash memory with OTP area:
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ST21F320
8/16-bit
10-year
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M 16100 39 2 1019
Abstract: No abstract text available
Text: SPC560P34L1, SPC560P34L3 SPC560P40L1, SPC560P40L3 32-bit Power Architecture based MCU with 320 KB Flash memory and 20 KB RAM for automotive chassis and safety applications Datasheet − production data Features • ■ Up to 64 MHz, single issue, 32-bit CPU core
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SPC560P34L1,
SPC560P34L3
SPC560P40L1,
SPC560P40L3
32-bit
e200z0h)
LQFP100
M 16100 39 2 1019
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spc560p34
Abstract: SPC560P34L1 SPC560P40L1 SPC560P SPC560P40 SPC560 SPC560P40L3 CRC-16-CCIT 1421D
Text: SPC560P34L1, SPC560P34L3 SPC560P40L1, SPC560P40L3 32-bit Power Architecture based MCU with 320 KB Flash memory and 20 KB RAM for automotive chassis and safety applications Datasheet − production data Features • ■ Up to 64 MHz, single issue, 32-bit CPU core
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SPC560P34L1,
SPC560P34L3
SPC560P40L1,
SPC560P40L3
32-bit
e200z0h)
16-channel
spc560p34
SPC560P34L1
SPC560P40L1
SPC560P
SPC560P40
SPC560
SPC560P40L3
CRC-16-CCIT
1421D
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Untitled
Abstract: No abstract text available
Text: C8051T620/621/320/321/322/323 Full Speed USB EPROM MCU Family Analog Peripherals High-Speed 8051 µC Core 10-Bit ADC C8051T620/320/321 only - - Up to 500 ksps Up to 21 external inputs VREF from on-chip VREF, external pin, Internal 1.8 V Regulator or VDD
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C8051T620/621/320/321/322/323
10-Bit
C8051T620/320/321
C8051T62x
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MN101E01K
Abstract: MN101E01L MN101E01M QFP100-P-1818B
Text: MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01K (under development) MN101E01L (under development) MN101E01M (under development) 256 K 320 K 384 K 10 K 14 K 24 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded
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MN101E01K,
MN101E01L,
MN101E01M
MN101E01K
MN101E01L
QFP100-P-1818B
MN101E01K
MN101E01L
MN101E01M
QFP100-P-1818B
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Untitled
Abstract: No abstract text available
Text: MN101E01L Type MN101E01L under development ROM (x×8-bit) 320 K External memory can be expanded RAM (××8-bit) 14 K External memory can be expanded Package Minimum Instruction Execution Time QFP100-P-1818B *Pb free 0.625 µs (at 3.0 V to 3.6 V, 32 MHz)
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MN101E01L
QFP100-P-1818B
P25/IRQ5
P24/IRQ4
P23/IRQ3A
P22/IRQ2A
P21/IRQ1
P20/IRQ0
P16/TM7IOA
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Untitled
Abstract: No abstract text available
Text: MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01K MN101E01L MN101E01M (under planning) 256 K 320 K 384 K 10 K 14 K 24 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package Minimum Instruction Execution Time
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MN101E01K,
MN101E01L,
MN101E01M
MN101E01K
MN101E01L
QFP100-P-1818B
P25/IRQ5
P24/IRQ4
P23/IRQ3A
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Untitled
Abstract: No abstract text available
Text: MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01K MN101E01L MN101E01M (under development) 256 K 320 K 384 K 10 K 14 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package Minimum Instruction Execution Time
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MN101E01K,
MN101E01L,
MN101E01M
MN101E01K
MN101E01L
QFP100-P-1818B
30/SBO1/TXD1
P25/IRQ5
P24/IRQ4
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MN101E01K
Abstract: MN101E01L MN101E01M QFP100-P-1818B
Text: MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01K MN101E01L MN101E01M (under development) 256 K 320 K 384 K 10 K 14 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package Minimum Instruction Execution Time
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MN101E01K,
MN101E01L,
MN101E01M
MN101E01K
MN101E01L
QFP100-P-1818B
MN101E01K
MN101E01L
MN101E01M
QFP100-P-1818B
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MN150409
Abstract: MN150810 MN152811 MN150402 MN152810 MN150831 MN150202 mn150832
Text: • 4-Bit Single Chip Microcomputers, MN1500 Family Category ROM K Byte RAM ( X4-bit) Input/ Output (Lines) 1 96 23 MN150401 4 2 4 MN150602 6 MN155201 2 320 128 320 320 128 MN150837 4 4 8 320 128 192 256 512 32 32 54 32 23 32 21 21 23 33 MN151233 12 512
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MN1500
MN1551A2
MN150402
MN150202
MN150401
MN150602
MN155201
N15P0802
MN15P5402
MN150837
MN150409
MN150810
MN152811
MN152810
MN150831
mn150832
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M2118
Abstract: sck 0120 M2118-12 M2118-15 M2118-7 x 1-Bit Dynamic RAM
Text: intei M2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM M ILITARY M2118-12 M2118-15 Maximum Access Time ns 120 150 Read, Write Cycle (ns) 270 320 Read-Modify Cycle (ns) 320 410 CAS Controlled Output is Three-State, TTL Compatible RAS Only Refresh 128 Refresh Cycles Required
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M2118
M2118-12
M2118-15
sck 0120
M2118-15
M2118-7
x 1-Bit Dynamic RAM
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2118 intel
Abstract: Intel 2118 2118 dynamic ram intel 2118 FAMILY tcp 8111 2118 ram S6447 2118-15 S6331 2118-10
Text: intei 2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM 2118-10 2118-12 Maximum Access Time ns 100 120 150 Read, Write Cycle (ns) 235 270 320 Read-Modify-Write Cycle (ns) 285 320 410 Single +5V Supply, ±10% Tolerance CAS Controlled Output is Three-State, TTL Compatible
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x 1-Bit Dynamic RAM
Abstract: No abstract text available
Text: in t e T 12118 FAMILY 16,384 x 1-BIT DYNAMIC RAM INDUSTRIAL 12118-15 12118-12 Maximum Access Time ns 120 150 Read, Write Cycle (ns) 270 320 Read-Modify Cycle (ns) 320 410 CAS Controlled Output is Three-State, TTL Compatible Single + 5 V Supply, ± 1 0 % Tolerance
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AFN-12118/FDS
AFN-12118/FDS
x 1-Bit Dynamic RAM
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MN152810
Abstract: SDIP052-P-0600 EP152810
Text: □ M N 152810 1Type MN152810 | ROM x8-bit 8K | RAM (x4-bit) 320 | Number of Instructions 115 | Minimum Instruction Execution Time 2.O^is at 1/12 frequency dividing (at 4.5 to 5.5V, 6MHz) | Interrupts •RESET | Timer Counter Timer Counter: 8-bit x 1 | Serial Interface
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MN152810
PX-ICE1500
PX-PRB152810
EP152810
SDIP052-P-0600
P23/SIRQ
MN152810
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Untitled
Abstract: No abstract text available
Text: intei M2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM M IL IT A R Y M2118-4 120 270 320 Maximum Access Time ns Read, Write Cycle (ns) Read-Modify Cycle (ns) • Single +5V Supply, ±10% Tolerance M2118-7 150 320 410 ■ RAS Only Refresh ■ HMOS Technology ■ Low Power: 150 mW Max. Operating
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M2118
M2118-4
M2118-7
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x 1-Bit Dynamic RAM
Abstract: M2118 M2118-4 M2118-7
Text: in t e i M2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM M ILITARY M2118-4 120 270 320 Maximum Access Time ns Read, Write Cycle <ns) Read-Modify Cycle (ns) M2118-7 150 320 410 • Single + 5 V Supply, ± 1 0 % Tolerance ■ RAS Only Refresh ■ HMOS Technology ■ Low Power: 150 mW Max. Operating
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M2118
M2118-4
M2118-7
x 1-Bit Dynamic RAM
M2118-7
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Intel 2118
Abstract: TC2-25 M2118 M2118-4 M2118-7
Text: in t e i M2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM M ILITARY M2118-4 120 270 320 Maximum Access Time ns Read, Write Cycle <ns) Read-Modify Cycle (ns) M2118-7 150 320 410 • Single + 5 V Supply, ± 1 0 % Tolerance ■ RAS Only Refresh ■ HMOS Technology ■ Low Power: 150 mW Max. Operating
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M2118
M2118-4
M2118-7
Intel 2118
TC2-25
M2118-7
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Untitled
Abstract: No abstract text available
Text: in te i 4002 320-BIT RAM AND 4-BIT OUTPUT PORT Four Registers of 20 4 Bit Characters Direct Interface to MCS-40 4 Bit Bus Output Port Low-Power TTL Compatible • 16 Pin Dual In-Line Package ■ Standard Operating Temperature Range of 0° to 70°C ■ Also Available With -40°
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320-BIT
MCS-40TM
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Untitled
Abstract: No abstract text available
Text: J IVIN6755240 / 320 MN6755240 / 320 1 Type 1 ROM x8-bit 2 4 K /3 2 K 1 RAM (x8-bit) 7 0 4 / 1024 1 Minimum Instruction Execution Time 0,33|JS (at 3 .3 to 5 .5 V , 1 2M H z) w ith M ain c lo c k operated 0.25ms (at 4 .2 to 5 .5 V , 1 6M H z) 122ms (at 3 .3 to 5 .5 V , 3 2 .7 6 8 k H z)
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IVIN6755240
MN6755240
122ms
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RC clock generator 12MHz
Abstract: QFP128 MN6755240 MN6755320 QFP124-P-2828 QFP128-P-1818
Text: □ MN6755240 / 320 M N 6755240 / 320 1 Type > ROM x8-bit 2 4 K /3 2 K 1 RAM (xB-bit) 7 0 4 / 1024 1 Minimum Instruction Execution Time ' 0,33|JS (at 3 .3 to 5 .5 V , 12M H z) w ith M ain C lock operated 0 .2 5 ms (at 4 .2 to 5 .5 V , 1 6M Hz) 1 2 2 ms (at 3 .3 to 5 .5 V , 32.7 68 k H z)
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MN6755240
MN6755249
24K/32K
12MHz)
16MHz)
768kHz)
16-bit
16MHz
RC clock generator 12MHz
QFP128
MN6755320
QFP124-P-2828
QFP128-P-1818
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