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    23C32000

    Abstract: No abstract text available
    Text: 32000AG C MOS M a s k R OM ELECTRONICS 32M-BH 4M X 8/2M X 16 CMOS MASK ROM • Switchable organization 4,194,304 x8(byte mode) 2,097,152 x16(word mode) • Fast access time : 120ns (Max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.)


    OCR Scan     		PDF KM23C32000AG 32M-BH 120ns 32000AG P-600 23C32000AG 304x8bit 152x16bit 0D313SQ 23C32000

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000