3203 NPN
Abstract: 2SD2116 3203 transistor transistor 3203
Text: Ordering number: EN 3 2 0 3 No. 3203 _ 2SD2116 NPN Epitaxial P lanar Silicon Transistor General Driver Applications F eatu re s • Darlington connection • High DC current gain •Large current capacity, wide ASO A bsolute M axim um R atin g s a t Ta = 25°C
|
OCR Scan
|
2SD2116
3203 NPN
3203 transistor
transistor 3203
|
PDF
|
NE567
Abstract: tone decoder ne567 567 tone decoder
Text: Issued March 1998 284-3203 Data Pack J Phase locked loops NE567 Data Sheet RS stock number 307-294 The RS NE567 tone and frequency decoder is a highly stable phase-locked loop with synchronous AM lock detection and power output circuitry. Its primary function is to drive a load
|
Original
|
NE567
NE567
500kHz)
100mA
tone decoder ne567
567 tone decoder
|
PDF
|
transistor 2sc 3203
Abstract: transistor 3203 2sc3203 transistor 3203 y
Text: F SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC 3203 (a p p lic a t io n s U n it in m m •Low F r e q u e n c y P o w e r A m plifiers [ (B-Class P u sh -p u ll, P o - l W ) ■General P u r p o s e Sw itch in g C ir c u its (f e a t u r e s )
|
OCR Scan
|
600mW,
800mA
500mA,
Ta-25Â
100mA
700mA
Ic-10mA
transistor 2sc 3203
transistor 3203
2sc3203
transistor 3203 y
|
PDF
|
LA 4301
Abstract: TCST 2301 telefunken tcst LA+4301
Text: TELEFUNKEN ELECTRONIC 'm u ‘ifiD IFlDKlKiK] electronic ÖTBDD^b QDQ7ÖM7 5 H i ALGG D TCST 110. up to TCST 430. r * y / - CreativeTéchnotogìes 7? Optoelectronic Interrupter with Aperture Construction: Emitter: GaAs-IR-Lumineszenzdiode Detector: Silicon NPN Epitaxial Phototransistor
|
OCR Scan
|
200Tb
0QQ765S
0D076S3
TCST4203
LA 4301
TCST 2301
telefunken tcst
LA+4301
|
PDF
|
2SD2116
Abstract: No abstract text available
Text: Ordering number:3203 NPN Epitaxial Planar Silicon Transistor 2SD2116 General Driver Applications Features Package Dimensions • Darlington connection. · High DC current gain. · Large current capacity, wide ASO. unit:mm 2064A [2SD2116] 2.5 1.45 1.0 1.0
|
Original
|
EN3203
2SD2116
2SD2116]
2SD2116
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Opto Semiconductors NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale Features
|
OCR Scan
|
103ff.
169ff.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei 880 nm (SFH 320 FA)
|
Original
|
Q62702-P0961
Q62702-P390
Q62702-P3602
Q62702-P1606
|
PDF
|
Q62702-P0961
Abstract: Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P3601 Q62702-P3602 Q62702-P390 Q62702-P393
Text: NPN-Silizium-Fototransistor im SMT TOPLED-Gehäuse Silicon NPN Phototransistor in SMT TOPLED-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei
|
Original
|
|
PDF
|
P3601
Abstract: Q62702-P0961 Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P3601 Q62702-P3602 Q62702-P390 Q62702-P393 marking 320 ON
Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
|
Original
|
|
PDF
|
Q65110A2510
Abstract: Q65110A2475
Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
|
Original
|
|
PDF
|
Q65110A2510
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2014-06-04 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED ®-Gehäuse Version 1.2 SFH 320, SFH 320 FA SFH 320 SFH 320 FA / FAG Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)
|
Original
|
D-93055
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 2014-01-14 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED®-Gehäuse Version 1.1 SFH 320, SFH 320 FA SFH 320 SFH 320 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)
|
Original
|
D-93055
|
PDF
|
OMA120
Abstract: FZT605 FZT604 FZT705 ARAA 14ge
Text: I SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT604 TRANSISTORS ~ ISSUE 3- OCTOBER 1995 FEATURES * Guaranteed * Fast Switching c h~~ Specified up to 2A E PARTMARKING DEVICE TYPE IN FULL DETAIL - COMPLEMENTARY TYPES - FZT604 - FZ1704 c @ B FZT605 - FZT705
|
Original
|
OT223
FZT604
FZT604
FZ1704
FZT605
FZT705
FZT605
FZTBI14
OMA120
FZT705
ARAA
14ge
|
PDF
|
Q62702-P0961
Abstract: Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P390 Q62702-P393 phototransistor 650 nm sfh 320 FA
Text: SFH 320 SFH 320 FA fplf6724 fpl06724 NPN-Silizium-Fototransistor im SMT TOPLED-Gehäuse Silicon NPN Phototransistor in SMT TOPLED-Package Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features
|
Original
|
fplf6724
fpl06724
IPCE/IPCE25o
Q62702-P0961
Q62702-P0988
Q62702-P1606
Q62702-P1607
Q62702-P390
Q62702-P393
phototransistor 650 nm
sfh 320 FA
|
PDF
|
BC368
Abstract: No abstract text available
Text: BC368 BC368 B C TO-92 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
BC368
BC368
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA C\J 1 ^ oO Q_ 2.1 0.1 (typ 1.7 0.9 0.7 CO CO 0.18 0.12 Approx. weight 0.03 < Cathode/Collector GPL06724 (M 1 ^ (O Maf3e in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.
|
OCR Scan
|
GPL06724
OHF01402
|
PDF
|
foto transistor
Abstract: phototransistor 650 nm P1606 sfh 97 Q62702-P0961 Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P390 Q62702-P393
Text: SFH 320 SFH 320 FA SFH 320 SFH 320 FA fplf6724 fpl06724 NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED -Package Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale
|
Original
|
fplf6724
fpl06724
IPCE/IPCE25o
foto transistor
phototransistor 650 nm
P1606
sfh 97
Q62702-P0961
Q62702-P0988
Q62702-P1606
Q62702-P1607
Q62702-P390
Q62702-P393
|
PDF
|
SIEMENS SMT-TOPLED
Abstract: sfh siemens
Text: SIEMENS NPN-Siliziiim-Fototransistor im SMT-TOPLED -Gehäuse mit Tageslichtsperrfilter Silicon NPN Phototransistor in SMT-TOP-LED® with Daylight Filter SFH 320 SFH 320 F M a ß e in m m , w en n nicht an d ers ang egeb en /D im en s io n s in m m , unless otherw ise specified.
|
OCR Scan
|
8235b
00S74T1
Photocurrent/pCE//pCE25°
0535bGS
S74T2
SIEMENS SMT-TOPLED
sfh siemens
|
PDF
|
cpi06
Abstract: No abstract text available
Text: SIEMENS SFH 320 SFH 320 FA fp!06724 NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED -Package 3.0 -LL 1.7 0.9 0.7 _ - 4 Chi 8^ J_ ^ ¡ 0 .6]^ Q.l2~ I "*0.4* C o th o d e ./C o lle c to r w e ig h t 0 .0 3 g
|
OCR Scan
|
CPI06724
cpi06
|
PDF
|
604f
Abstract: t605
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT604 FZT605 ISSUE 3 - OCTOBER 1995_ F E A TU R E S * G u a ra n te e d hFE S p e c ifie d up to 2A * Fast S w itc h in g P A R T M A R K IN G D E TA IL - D EVICE TY P E IN FU LL
|
OCR Scan
|
OT223
FZT604
FZT605
300ns,
FZT605
604f
t605
|
PDF
|
transistor BD 522
Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi
|
OCR Scan
|
BD801
BD801
transistor BD 522
BDS08
transistor 3203
Transistor 3202 1 A 60
221A-06
10 watt power transistor bd
BD802
BD808
BD810
|
PDF
|
