AU-1448
Abstract: 548 1334 diode
Text: MITEQ AU-1448 - AU-1480 AMPLIFIER FREQUENCY MHz 5–200 5–400 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AU-1480 AU-1448 50 50 0.5 0.5 2.0:1 2.0:1 50/50 50/50 1.2 1.2 11
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AU-1448
AU-1480
548 1334 diode
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rectifier diode for max 1.5A
Abstract: 433B IRFF430 JANTX2N6802 JANTXV2N6802 9433B
Text: Provisional Data Sheet No. PD-9.433B HEXFET JANTX2N6802 POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430] N-CHANNEL Ω HEXFET 500 Volt, 1.5Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
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JANTX2N6802
JANTXV2N6802
MIL-PRF-19500/557]
IRFF430]
rectifier diode for max 1.5A
433B
IRFF430
JANTX2N6802
JANTXV2N6802
9433B
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9433B
Abstract: IRFF430 JANTX2N6802 JANTXV2N6802 433B rectifier diode for max 250v 1.5A
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.433B HEXFET JANTX2N6802 POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430] N-CHANNEL Ω HEXFET 500 Volt, 1.5Ω Product Summary HEXFET technology is the key to International
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JANTX2N6802
JANTXV2N6802
MIL-PRF-19500/557]
IRFF430]
9433B
IRFF430
JANTX2N6802
JANTXV2N6802
433B
rectifier diode for max 250v 1.5A
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JANTX2N6762
Abstract: IRF430 JANTX2N6768 JANTXV2N6762 JANTXV2N6768
Text: Provisional Data Sheet No. PD-9.336E HEXFET JANTX2N6762 POWER MOSFET JANTXV2N6762 [REF:MIL-PRF-19500/542] [GENERIC:IRF430] N-CHANNEL Ω HEXFET 500 Volt, 1.5Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance
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JANTX2N6762
JANTXV2N6762
MIL-PRF-19500/542]
IRF430]
JANTX2N6762
IRF430
JANTX2N6768
JANTXV2N6762
JANTXV2N6768
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IRF430
Abstract: JANTX2N6762 JANTX2N6768 JANTXV2N6762 JANTXV2N6768
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.336E HEXFET JANTX2N6762 POWER MOSFET JANTXV2N6762 [REF:MIL-PRF-19500/542] [GENERIC:IRF430] N-CHANNEL Ω HEXFET 500 Volt, 1.5Ω Product Summary HEXFET technology is the key to International Rectifier’s
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JANTX2N6762
JANTXV2N6762
MIL-PRF-19500/542]
IRF430]
IRF430
JANTX2N6762
JANTX2N6768
JANTXV2N6762
JANTXV2N6768
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rfm 1207-5
Abstract: 433,92 resonator RP1207-5 433.92 Mhz two-port saw resonator 133524 MPSH10 P1239 RF1172 rx1305 IC rp1102
Text: Low Power Components Short Form Catalog l Introduction l Selection Guide by Frequency Application l Master Index Sorted by Frequency l Master Index Sorted by Lid Symbol l Typical Radio Types l Superhet Receiver Example l RO Series l RP Series l RF Series l
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100ppm
rfm 1207-5
433,92 resonator
RP1207-5
433.92 Mhz two-port saw resonator
133524
MPSH10
P1239
RF1172
rx1305
IC rp1102
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IRFY430C
Abstract: IRFY430CM
Text: Provisional Data Sheet No. PD 9.1291B HEXFET POWER MOSFET IRFY430CM N-CHANNEL Product Summary 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1291B
IRFY430CM
IRFY430C
IRFY430CM
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IRFY430C
Abstract: IRFY430CM
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1291B HEXFET POWER MOSFET IRFY430CM N-CHANNEL Product Summary 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1291B
IRFY430CM
IRFY430C
IRFY430CM
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA93 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • HIGH VOLTAGE — 400V (±200V) LOW QUIESCENT CURRENT — 10mA HIGH OUTPUT CURRENT — 8A PROGRAMMABLE CURRENT LIMIT
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546-APEX
SIP03)
200mS
PA93U
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zener z1
Abstract: 12 volt zener diode 10 watts j718
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF1513T1
AN215A,
zener z1
12 volt zener diode 10 watts
j718
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IRF9530 mosfet circuit diagram
Abstract: AN-948 HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet complementary of irf9530 IR 948 amplifier circuit diagram transistor 2n5088 equivalent transistor f 948 IRF9530 mosfet
Text: AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary
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AN-948
IRF9530 mosfet circuit diagram
AN-948
HEXFEt Power MOSFET Design Guide
hf class AB power amplifier mosfet
complementary of irf9530
IR 948
amplifier circuit diagram
transistor 2n5088 equivalent
transistor f 948
IRF9530 mosfet
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hf class AB power amplifier mosfet
Abstract: AN-948 IRF9530 mosfet circuit diagram amplifier circuit diagram HEXFET Guide HEXFEt Power MOSFET Design Guide circuit diagram of mosfet based power supply 60w audio amplifier circuit diagram power mosfet audio amplifier class-A mosfet HF amplifier
Text: AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary
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AN-948
hf class AB power amplifier mosfet
AN-948
IRF9530 mosfet circuit diagram
amplifier circuit diagram
HEXFET Guide
HEXFEt Power MOSFET Design Guide
circuit diagram of mosfet based power supply
60w audio amplifier circuit diagram
power mosfet audio amplifier class-A
mosfet HF amplifier
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d401a
Abstract: D302 d401b PIC18CXXX
Text: 32 Specifications Section 32. Electrical Specifications HIGHLIGHTS 32.1 32.2 32.3 32.4 32.5 32.6 32.7 32.8 32.9 32.10 32.11 32.12 32.13 32.14 32.15 32.16 32.17 32.18 32.19 32.20 32.21 32.22 32.23 32.24 32.25 32.26 32.27 32.28 32.29 Introduction . 32-2
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PIC18CXXX.
com/10/faqs/codeex/
DS39533A-page
PIC18C
d401a
D302
d401b
PIC18CXXX
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D401A
Abstract: D401a datasheet D405 NR pp d115 PIC18CXXX ssp i2c d401b D403 A D403 transistor datasheet d405
Text: Section 32. Electrical Specifications HIGHLIGHTS Introduction . 32-2 Absolute Maximums. 32-3
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com/10/faqs/codeex/
DS39533A-page
PIC18CXXX.
PIC18C
D401A
D401a datasheet
D405 NR
pp d115
PIC18CXXX
ssp i2c
d401b
D403 A
D403 transistor datasheet
d405
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OIP1Q1_ Digital Output Photodetector_ GENERAL DESCRIPTION The O IP IO I is a digital output photodetector that incorporates a photodiode, amplifier circuit, Schmitt-trigger circuit and a voltage regulator circuit on to a single chip. The O IP IO I allows
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Untitled
Abstract: No abstract text available
Text: Jp j-0 rnational Provisional Data Sheet No. PD-9.336E I O R Rectifier JANTX2N6762 HEXFET POWER MOSFET JANTXV2N6762 [REF:MIL-PRF-19500/542] [GENERIC:IRF430] N- CHA NNE L 500 Volt, 1.50 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The effi
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JANTX2N6762
JANTXV2N6762
MIL-PRF-19500/542]
IRF430]
554S5
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Untitled
Abstract: No abstract text available
Text: Jp | j - 0 p p q j- j q J p q Provisional Data Sheet No. PD-9.433B I O R Rectifier JANTX2N6802 HEXFET POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430] N -C H A N N E L 500 Volt, 1 .5 0 HEXFET Product Sum m arf HEXFET technology is the key to International
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JANTX2N6802
JANTXV2N6802
MIL-PRF-19500/557]
IRFF430]
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Untitled
Abstract: No abstract text available
Text: International Provisional Data Sheet No. PD 9.1291 HëHRectifier IRFY4 3 0 CM HEXFET POWER MOSFET OD N -C H A N N E L Description Product Summary Characteristic H E X F E T ® te c h n o lo g y is th e key to In te rn a tio n a l Rectifier's advanced line of power M O SFET transistors.
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O-257AA
4A554S2
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.809 International IG R Rectifier IRFI2 6 0 HEXFET TRANSISTOR N-CHANNEL Product Summary 200Volt, 0.060Q, HEXFET H E X F E T technology Is the key to International Rectifier’s advanced line of power M OSFET transis tors. The efficient geometry design achieves very
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200Volt,
IRFI260
GGSS41Ã
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1291 B International I R Rectifier HEXFET PO W E R M O S F E T IRFY430CM N -C H A N N E L Product Summary 500Volt, 1.5£2 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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IRFY430CM
500Volt,
S5452
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DMS1-26A
Abstract: mdc 171 DMH2-22 MD 243 diode MD-525-4 MDS-222 MLLF-3 MD 202 MD-414 Adams-Russell
Text: INDEX PAGE 26 27 29 30 29 31 32 33 34 39 38 50 51 53 58 66 75 76 77 84 90 86 91 91 88 92 93 28 35 37 38 40 41 42 43 44 45 46 47 48 49 52 54 55 56 57 59 61 62 63 64 65 67 68 69 70 72 73 MODEL AM/AMC-184 AM/AMC-210 AM/AMC-211 AM/AMC-212 AM/AMC-250 AMS-117 AMS-162
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AM/AMC-184
AM/AMC-210
AM/AMC-211
AM/AMC-212
AM/AMC-250
AMS-117
AMS-162
AMS-181
AMS-211
AMS-212
DMS1-26A
mdc 171
DMH2-22
MD 243 diode
MD-525-4
MDS-222
MLLF-3
MD 202
MD-414
Adams-Russell
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sec 222M se
Abstract: RKM 24 sm transistor sire db 125 160F 2120R SENSORS TEMPERATURE Pt-100-DIN 43760 long rang TRANSMITTER Fm circuit calibration procedure altek thermocouple simulator 2600 t series pressure transmitter pyro sensor range 20m turbine flowmeter
Text: ALTEK Altek process calibrators are accurate, rugged, and easy to u s e . . perfect for control room, shop, or field. They save you time on startups and routine calibration, reduce downtime and increase productivity. Simply select, connect, and check. Each calibrator does a specific job. Check milliamp loops; simulate and measure
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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CON-46
O-104
14-Lead
16-Lead
12-Lead
16-Lead
O-220AB
1N5411
npn transistor RCA 467
CD4004T
CA3051
CD4001D
40468A
RCA 40822
40664 SCR
rca 40583
2N5756
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Gunn Diode
Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Text: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER
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DA1304
DA1307
DA1321
DA1321-1
DA1338
DA1338-1
DA1338-2
DA1338-3
DA1349-2
DA1349-4
Gunn Diode
Microwave Silicon Detector Diode
DW9248
microwave waveguide
Marconi gunn
Silicon Detector
UHF diode
varactor diode filter
varactor
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