Hitachi DSA00171
Abstract: No abstract text available
Text: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry
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HN58S256A
32768-word
ADE-203-692
32768word
64-byte
D-85622
Hitachi DSA00171
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CXK5V8257BM
Abstract: CXK5V8257BTM CXK5V8257BYM
Text: CXK5V8257BTM/BYM/BM -70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits.
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CXK5V8257BTM/BYM/BM
-70LL/10LL
32768-word
32768words
TSOP-28P-L01R
TSOP028-P-0000-B
CXK5V8257BTM/BYM/BM
CXK5V8257BM
CXK5V8257BM
CXK5V8257BTM
CXK5V8257BYM
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Hitachi DSA002713
Abstract: No abstract text available
Text: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÕs organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.
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HN58S256A
32-kword
ADE-203-692B
32768word
64-byte
Hitachi DSA002713
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6303 CMOS IC LC35V256EM, ET-70W 256K 32K words x 8 bits SRAM Control pins: OE and CE Overview Package Dimensions The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices
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ENN6303
LC35V256EM,
ET-70W
LC35V256EM-70W
LC35V256ET-70W
32768word
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692B
Abstract: HN58S256A HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA00358
Text: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry
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HN58S256A
32-kword
ADE-203-692B
32768word
64-byte
D-85622
692B
HN58S256AT
HN58S256AT-15
HN58S256AT-20
Hitachi DSA00358
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6304 CMOS IC LC35W256EM, ET-10W 256K 32K words x 8 bits SRAM Control pins: OE and CE Overview Package Dimensions The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices
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ENN6304
LC35W256EM,
ET-10W
LC35W256EM-10W
LC35W256ET-10W
32768word
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HN27C256AFP-12T
Abstract: HN27C256AFP-15T HN27C256AP-12 HN27C256AP-15
Text: HN27C256AP/AFP Series 32768-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C256AP/AFP is a 32768-word by 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C256AP/AFP are in the “1” State Output High . Data is introduced by
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HN27C256AP/AFP
32768-word
32768-word
28-pin
HN27C256AFP-12T
HN27C256AFP-15T
HN27C256AP-12
HN27C256AP-15
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1822-HEX
Abstract: HM71V832 HM71V832FP-15 HM71V832T-15 "Ferroelectric RAM" Hitachi 32k static RAM Hitachi DSA00198 Hitachi DSA00198182
Text: HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM Preliminary Rev. 0.0 Nov. 20, 1995 Description The HM71V832 is a ferroelectric RAM, or FARM memory, organized as 32k-word x 8-bit. FRAM memory products from Hitachi combine the read/write characteristics of semiconductor RAM with
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HM71V832
32768-word
32k-word
HM71V832-15
HM71V832FP
FP-28DA)
HM71V832T
TFP-28DB)
1822-HEX
HM71V832FP-15
HM71V832T-15
"Ferroelectric RAM"
Hitachi 32k static RAM
Hitachi DSA00198
Hitachi DSA00198182
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70513
Abstract: No abstract text available
Text: Ordering number : ENN*7051 CMOS IC LC35W256GM, GT-70U 256K 32768-words x 8-bit SRAM with OE and CE control pins Preliminary Overview Package Dimensions The LC35W256GM-70U and LC35W256GT-70U are 32768-words by 8-bit asynchronous silicon gate low supply voltage CMOS SRAMs. These devices adopt a
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LC35W256GM,
GT-70U
32768-words
LC35W256GM-70U
LC35W256GT-70U
32768-words
70513
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TSOP028-P-0000-B
Abstract: No abstract text available
Text: CXK58257ATM/AYM -70L/10L -70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM Block Diagram Description CXK58257ATM/AYM is a 256K-bit, 32,768-word-by8-bit, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small packages and low
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CXK58257ATM/AYM
-70L/10L
-70LL/10LL
32768-word
256K-bit,
768-word-by8-bit,
CXK58257ATM:
CXK58257AYM:
CXK58257ATM/AYM-70L,
TSOP028-P-0000-B
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HN58V257T-35
Abstract: Hitachi DSA00171
Text: ADE-203-053F Z HN58V257 Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM Rev. 6.0 May. 25, 1995 The Hitachi HN58V257 is a electically erasable and programmable ROM organized as 32768-word × 8-bit. It realizes high speed, low power
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ADE-203-053F
HN58V257
32768-word
64-byte
HN58V257T
TFP-32DA)
HN58V257T-35
Hitachi DSA00171
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Untitled
Abstract: No abstract text available
Text: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry
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HN58S256A
32768-word
ADE-203-692
32768word
64-byte
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AWPn
Abstract: JG30 CXK58257B
Text: SONY CXK58257BTM/BYM/BP/BM -55LL/70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely
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CXK58257BTM/BYM/BP/BM
-55LL/70LL/10LL
32768-word
32768words
-55LL
-70LL
-10LL
AWPn
JG30
CXK58257B
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Untitled
Abstract: No abstract text available
Text: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry
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OCR Scan
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HN58S256A
32768-word
ADE-203-692
32768word
64-byte
D-85622
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PDF
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Untitled
Abstract: No abstract text available
Text: HN58S256A Series 256 k EEPROM 32-kword x 8-bit HITACHI ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÔs organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.
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OCR Scan
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HN58S256A
32-kword
ADE-203-692B
32768word
64-byte
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Untitled
Abstract: No abstract text available
Text: HN27256P Series 32768-word x 8-bit One Time Electrically Programmable ROM The HN27256P is a 32768-word by 8-bit one time electrically pro grammable ROM. Initially, all bits of the HN27256P are In the " 1 " state Output High . Data is introduced by selectively programming
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HN27256P
32768-word
28-pin,
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hm62256
Abstract: No abstract text available
Text: HM62256 Series 32768-word x 8-bit High Speed CMOS Static RAM FEATURES H M 6 2 2 5 6 P S eries High Speed: Fast Access Time 85/100/120/150ns max. Low Power Standby and Low Power Operation; Standby: 200/iW (typ)/10/LiW (typ) (L-version), Operation: 40mW (typ.) ( f = 1MHz)
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HM62256
32768-word
85/100/120/150ns
200/iW
/10/LiW
2256P
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5255BP, BFP, BKP-70,-85,-10,-12.-70L, -85L,- 10L,- 12L,-70LL,-85LL,- 10LL,-12LL 2 6 2 1 4 4 -B IT 3 2 7 6 8 -W 0 R D BY 8-BIT CM O S STATIC RAM DESCRIPTION The M5M5255BP, BFP, BKP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabri
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M5M5255BP,
BKP-70
-70LL
-85LL
-12LL
262144-bit
32768-words
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Untitled
Abstract: No abstract text available
Text: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) HITACHI ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized
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HN58C256A
HN58C257A
32-kword
HN58C257A)
ADE-203-410D
32768-word
64-byte
ns/100
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62256LP-12
Abstract: AKM62256-10 62256FP-12T 62256P
Text: AK M 62256 Series 32768-word x 8-bit High Speed CMOS Static RAM • • FEATURES High Speed: Fast Access Time 85/100/120/150ns max. • Low Power Standby and Low Power Operation; • Standby: 200^tW {t y p ) /1 0/uW (typ) (L-version), Operation: 40mW (typ.) (f = 1MHz)
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32768-word
85/100/120/150ns
62256P
DP-28)
62256FP
M62256P-8
AKM62256
62256LP-12
AKM62256-10
62256FP-12T
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N15N
Abstract: No abstract text available
Text: ADE-203-412 Z HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM Preliminary Rev. 0.0 Nov. 20,1995 HITACHI T h e H M 71V 832 is a fe rro e le c tric RAM , or FRAM memory, organized as 32k-word x 8-bit FRAM® memory products from Hitachi combine
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ADE-203-412
HM71V832
32768-word
32k-word
N15N
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28 pin plastic dip hitachi dimension
Abstract: No abstract text available
Text: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) HITACHI ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized
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HN58C256A
HN58C257A
32-kword
HN58C257A)
ADE-203-410D
32768-word
64-byte
ns/100
28 pin plastic dip hitachi dimension
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PDF
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Untitled
Abstract: No abstract text available
Text: HM62D3232 Series 32768-word x 32-bit Synchronous Fast Static RAM with Burst Counter and Pipelined Data Output HITACHI ADE-203-491A Z Rev. 1.0 Jun. 24, 1996 Features • • • • • • • • • • • • • • Single 3.3 Y power supply (LYTTL)
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HM62D3232
32768-word
32-bit
ADE-203-491A
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Untitled
Abstract: No abstract text available
Text: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) HITACHI ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized
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OCR Scan
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HN58V256A
HN58V257A
32-kword
HN58V257A)
ADE-203-357D
32768-word
64-byte
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