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Infineon Technologies AG SPW32N50C3FKSA1 MOSFET N-CH 560V 32A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPW32N50C3FKSA1	Tube	228		1	1 $9.86 10 $9.86 100 $5.838 1000 $4.69812 10000 $4.69812	Buy Now
Avnet Americas	SPW32N50C3FKSA1	Bulk		19 Weeks, 1 Days	1	1 $10.76 10 $9.72 100 $8.05 1000 $8.05 10000 $8.05	Buy Now
Newark	SPW32N50C3FKSA1	Bulk	2		1	1 $1.34 10 $1.34 100 $1.34 1000 $1.34 10000 $1.34	Buy Now
EBV Elektronik	SPW32N50C3FKSA1			16 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPW32N50C3 Trans MOSFET N-CH 560V 32A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW32N50C3FKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPW32N50C3	Tube		15 Weeks	240	1 - 10 - 100 - 1000 $3.56036 10000 $3.50071	Buy Now
Mouser Electronics	SPW32N50C3		282			1 $9.86 10 $9.47 100 $4.93 1000 $4.69 10000 $4.69	Buy Now
Chip-Germany GmbH	SPW32N50C3		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPW32N50C3		1,500			1 - 10 $6.8661 100 $4.5774 1000 $4.5774 10000 $4.5774	Buy Now

32N50C3 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
32N50C3 Abstract: SPW32N50C3 Q67040-S4613 Text: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 32N50C3 SPW32N50C3 Q67040-S4613	PDF
32N50C3 Abstract: 32N50C 32N50 Text: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 PG-TO247 SPW32N50C3 Q67040-S4613 32N50C3 32N50C3 32N50C 32N50	PDF
32N50C3 Abstract: Q67040-S4613 SPW32N50C3 Text: 32N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 P-TO247 Q67040-S4613 32N50C3 32N50C3 Q67040-S4613 SPW32N50C3	PDF
32N50C3 Abstract: SPW32N50C3 Text: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 009-134-A O-247 32N50C3 SPW32N50C3	PDF
32N50C3 Abstract: SPW32N50C3 Text: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 32N50C3 SPW32N50C3	PDF
32N50C3 Abstract: 32N50C SPW32N50C3 Q67040-S4613 Text: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 P-TO247 Q67040-S4613 32N50C3 32N50C3 32N50C SPW32N50C3 Q67040-S4613	PDF
32N50C3 Abstract: 32N50C Text: 32N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 P-TO247 Q67040-S4613 32N50C3 32N50C3 32N50C	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF
Untitled Abstract: No abstract text available Text: 32N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 009-134-A O-247	PDF