R1LV0408D
Abstract: R1LV0408DSB-7L R1LV0408DSA
Text: R1LV0408D Series 4M SRAM 512-kword x 8-bit REJ03C0310-0100 Rev.1.00 May.24.2007 Description The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s highperformance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density,
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R1LV0408D
512-kword
REJ03C0310-0100
32-pin
32pin
R1LV0408DSB-7L
R1LV0408DSA
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M5M51008BFP
Abstract: M5M51008BVP
Text: 1997-4/1 MITSUBISHI LSIs M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL-I 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Type name M5M51008BFP,VP,RV,KV,KR-70VL
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M5M51008BFP
-70VL
-10VL
-12VL
-15VL,
-70VLL
-10VLL
-12VLL
-15VLL-I
1048576-BIT
M5M51008BVP
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M5M5V108DFP
Abstract: M5M5V108DKV M5M5V108DVP
Text: 7th.July.2000 Ver. 1.1 MITSUBISHI LSIs M5M5V108DFP,VP,KV -70HI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.
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M5M5V108DFP
-70HI
1048576-BIT
131072-WORD
M5M5V108DVP
32-pin
M5M5V108DKV
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A1245
Abstract: M5M51008BVP M5M51008BP
Text: 1997-3/25 MITSUBISHI LSIs M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, -55LL,-70LL,-10LL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Power supply current Type name M5M51008BP,FP,VP,RV,KV,KR-55L
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M5M51008BP
-55LL
-70LL
-10LL
1048576-BIT
131072-WORD
KR-55L
KR-70L
A1245
M5M51008BVP
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SMD a16 Transistor
Abstract: DQ7-21 MARK S2 smd transistor A8 M5M5V108CFP M5M5V108CRV M5M5V108CVP
Text: MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI, -70XI, -10XI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and
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M5M5V108CFP
-70HI,
-10HI,
-70XI,
-10XI
1048576-BIT
131072-WORD
M5M5V108CVP
SMD a16 Transistor
DQ7-21
MARK S2
smd transistor A8
M5M5V108CRV
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Untitled
Abstract: No abstract text available
Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher
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R1LP0108E
R10DS0029EJ0300
072-word
32-pin
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432W6
Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P
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240K6X-A
240P6Y-A
240P6Z-A
255F7F
256F7B
256F7X-A/B
256P6J-E
256P6K-E
272F7X-A/B
281S8-C
432W6
48P4B
hssop
44P3W-R
28P0
5P5T
tsop 2-54
42P9R
70P3S-M
479F7G
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m5m5408b
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M5M5V408BFP
Abstract: M5M5V408BKR M5M5V408BKV M5M5V408BRT M5M5V408BTP M5M5408
Text: revision-K1.0e, ' 98.09.07 MITSUBISHI LSIs M5M5V408BFP/TP/RT/KV/KR 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM FEATURES DESCRIPTION The M5M5V408B is a family of low voltage 4-Mbit static RAMs organized as 524,288-words by 8-bit, fabricated by Mitsubishi's highperformance 0.25µm CMOS technology.
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M5M5V408BFP/TP/RT/KV/KR
4194304-BIT
524288-WORD
M5M5V408B
288-words
32-pin
M5M5V408BFP
M5M5V408BKR
M5M5V408BKV
M5M5V408BRT
M5M5V408BTP
M5M5408
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M5M5408B
Abstract: M5M5408BFP M5M5408BRT M5M5408BTP M5M5408
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M5M51008CP
Abstract: M5M51008CRV M5M51008CVP
Text: MITSUBISHI LSIs M5M51008CP,FP,VP,RV,KV,KR -55H, -70H, -55X, -70X 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and
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M5M51008CP
1048576-BIT
131072-WORD
M5M51008CVP
32-pin
M5M51008CRV
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M5M51008BP
Abstract: M5M51008BVP
Text: 1997-4/1 MITSUBISHI LSIs M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, -55LL,-70LL,-10LL-I 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Power supply current Type name M5M51008BP,FP,VP,RV,KV,KR-55L
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M5M51008BP
-55LL
-70LL
-10LL-I
1048576-BIT
131072-WORD
KR-55L
KR-70L
M5M51008BVP
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R1LP0108ESP
Abstract: R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202
Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0200 Rev.2.00 2011.01.14 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher
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R1LP0108E
R10DS0029EJ0200
072-word
32-pin
R1LP0108ESP
R1LP0108ESF
R1LP0108
R1LP0108ESP-7SI
R1LP0108ESF-7SR
R1LP0108ESP-7SR
R1LP0108es
r1lp0108esp-5si#s0
r1lp0108esp-7sr#b0
ttl 7202
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100MHZ
Abstract: IC PACKAGE ELECTRICAL CHARACTERISTIC LCR 24p2n-a 136P6S-C
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES IC PACKAGE ELECTRICAL CHARACTERISTIC 6.2 IC PACKAGE ELECTRICAL CHARACTERISTICS Tables 1, 2 and 3 show electrical characteristics of packages of various types. They are called LCR values, which include Ls, Lm, Co, Cm,
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136P6S-C
100P6S-C
80P6N-C
208P6Y-A
64P6N-B
160P6E-A
44P6N-B
100MHZ
IC PACKAGE ELECTRICAL CHARACTERISTIC LCR
24p2n-a
136P6S-C
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is M5M5408AFP,TP,RT-70L-I,-70LL-I, -1 OL-1,-1 OLL-I 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5408A is 4,194,304-bit CMOS static RAM organized as 524,288-words by 8-bit, fabricated using high-performance
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M5M5408AFP
RT-70L-I
-70LL-I,
4194304-BIT
524288-WORD
M5M5408A
304-bit
288-words
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Untitled
Abstract: No abstract text available
Text: .» iJ V n V MITSUBISHI LSIS P R E U ^ 'N A R ^ M5M5408FP,TP,RT-85VL,-1 OVL, -85VLL,-Ì0VLL s°mepa,a 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5408 is 4194304-bit CMOS static RAM organized as 524288-words by 8-bit, fabricated using high-performance
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M5M5408FP
RT-85VL
-85VLL
4194304-BIT
524288-WORD
M5M5408
4194304-bit
524288-words
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PP5V
Abstract: M5M28F101AFP 708-8034
Text: K MITSUBISHI LSIs _ ' M 5 M 2 8 F 1 0 1 _ A F P , J , V P , R V - 8 5 , - 1 0 , - 1 2 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI M5M28F101A is hlgh-speei 1048576-bit CMOS Flash Memories. This is suitable for the api lications with micro
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1048576-BIT
131072-WQRD
M5M28F101A
1048576-bit
32pin
--A14
MD5-MEM-05-6/95-500
PP5V
M5M28F101AFP
708-8034
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Untitled
Abstract: No abstract text available
Text: '97.3.21 MITSUBISHI LSIs M5M5V208FP,VP,RV,KV,KR -tol-w, -85L-W, -10L-W, -12L-W, _ n.,nnrNn/araw -70LL-W, -85LL-W, -10LL-W, -12LL-W ip jB lU llö M /Ä W Y N o tic e T h is is n e t • Som e paramètre: limits are subject_ 2097152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM
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M5M5V208FP
-85L-W,
-10L-W,
-12L-W,
-70LL-W
-85LL-W
-10LL-W
-12LL-W
2097152-BIT
262144-WORD
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m5m5v208
Abstract: AX8560 Kr85
Text: '97.3.21 MITSUBISHI LSIs M5M5V208FP,VP,RV,KV,KR -70L-W, -85L-W, - 10L-W, - 12 L-W, nnn,nAf5 W -70LL-W, -85LL-W, -10LL-W, -12LL-W Notice: This is not a final sP ^ ^ ° o c h ange. s o m e p a ra m e tric lim its are sud io c 2Q g71 g 2 B |J 2 g 2 1 44.WORD BY 8-BIT) CMOS STATIC RAM
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M5M5V208FP
-70L-W,
-85L-W,
10L-W,
-70LL-W,
-85LL-W,
-10LL-W,
-12LL-W
M5M5V208
152-bit
AX8560
Kr85
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51T08AP,FP,VP,RV-55SL 1048576-BIT 131Q72-WORD BY8-BIT CM0S STATIC RAM DESCRIPTION The M5M51T08AP, FP, VP, RV are a 1048576- bit CMOS static RAM organized as 131072 word by 8 - bit which are fabricated using high-performance quadruple-polysilicon
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M5M51T08AP
RV-55SL
1048576-BIT
131Q72-WORD
M5M51T08AP,
32-pin
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M5M27C101P
Abstract: No abstract text available
Text: bSHTBes 0 D2 3 1 0 7 b S T • MI T I MITSUBISHI LSIs M 5M 27C 101P,FP,J,VP,RV-15 1048576-BIT 131072-WORD BY 8-BIT CMOS ONE TIME PROGRAMMABLE ROM WDESCRIPTION The Mitsubishi M5M27C101 P, FP, J. VP, R V -15 are high speed 1 0 48 57 6-bit one time programmable read only
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RV-15
1048576-BIT
131072-WORD
M5M27C101
M5M27C101P,
RV-15
M5M27C101P
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51008BP,FP,VP,RV-55L,-70L,-85L, oreUw«n ^ y -10L,-55LL,-70LL,-85LL,-1 OLL a ^ me _ 1048576-BIT 131Q72-WORD BY 8-BIT CMOS STATIC RAM NoWe SO<^ç DESCRIPTION The M5M51008BP,FP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated
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M5M51008BP
RV-55L
-55LL
-70LL
-85LL
1048576-BIT
131Q72-WORD
1048576-bit
131072-word
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 5 4 0 8 A F P ,T P ,R T -5 5 L , * -7 0 L ,-1 0 L , -5 5 L L ,-7 0 L L ,-1 O L L * not a c6m!ts 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5408A Is a 4194304-bit CMOS Static RAM organized as 524288-word by 8-bit. This device is fabricated using Mitsubishi's
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4194304-BIT
524288-WORD
M5M5408A
4194304-bit
32-pin
M5M5408AFP)
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m5m51008afp
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51008AFP,VP,RV-85VL,-1 OVL, -85VLL,-1 OVLL 1048576-BIT 131Q72-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AFP, VP, RV are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - bit which are fabricated using high-performance triple polysilicon CMOS
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M5M51008AFP
RV-85VL
-85VLL
1048576-BIT
131Q72-WORD
M5M51008AFP,
M5M51008AVP,
M5M51008AVP
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