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    33 16U Search Results

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    33 16U Price and Stock

    Amphenol Communications Solutions 10131933-316ULF

    CONN RCPT 16P 0.079 GOLD SMD R/A
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    DigiKey 10131933-316ULF Tube
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    Newark 10131933-316ULF Bulk 2,016
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    Amphenol Corporation 10131933-316ULF

    MINITEK RECEP DR HCC SMT - Rail/Tube (Alt: 10131933-316ULF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 10131933-316ULF Tube 19 Weeks, 1 Days 2,016
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    Mouser Electronics 10131933-316ULF
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    Kyocera AVX Components TAJD336M016TNJV

    Tantalum Capacitors - Solid SMD 16V 33uF 20% 2917 ES R= 0.9 Ohm
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    Mouser Electronics TAJD336M016TNJV 1,653
    • 1 $1.56
    • 10 $1.18
    • 100 $0.876
    • 1000 $0.489
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    Rubycon Corporation 16USG33000MEFCSN30X35

    Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS
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    Mouser Electronics 16USG33000MEFCSN30X35
    • 1 $6.18
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    Kyocera AVX Components 116UK331M100TT

    Specialty Ceramic Capacitors AVX/ATC SLC FINISHED
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    Mouser Electronics 116UK331M100TT
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    Find more 33 16U price and stock on Findchips.com

    33 16U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KB910Q

    Abstract: FW82801FBM KB910Q B4 SP093MX0000 FBM-L11-160808-800LMT ML1220T10 FBM-L11-201209-221LMAT BUF C752 D970K NQ82915GM
    Text: Material List by Single-Item/Multi-Level - All -Date : 03/22/2005 Time : 11:33:04 Drawing No: 451336 Plant: CN30 Revision: K Report by UID: 8745064


    Original     		PDF BO001 BO002 BO003 BO004 BO005 451336BO001 LA-2601 EDL00 NV43M/128M 451336BO002 KB910Q FW82801FBM KB910Q B4 SP093MX0000 FBM-L11-160808-800LMT ML1220T10 FBM-L11-201209-221LMAT BUF C752 D970K NQ82915GM

    Balluff bks-s21

    Abstract: BKS-S75 BKS-S74 C75B balluff 18 BKS-S20 BKS-S22 BKS-S49 C04A C49B
    Text: Mini Style Connectors Connectors Connector Style Configuration 3-5 Pole Mini 7/8' - 16UN-2B Straight 3 Pole Mini Cordset 3 Pole Female - 3 Pole Male Straight - Straight 3-5 Pole Mini 7/8' - 16UN-2B Right Angle 25 25 41 25 33 Cable Length Female 7/8”-16UN-2B


    Original     		PDF 16UN-2B 7/8-16UN-2B 12-pin BKS-S19. BKS-S20. BKS-S21. BKS-S22. Balluff bks-s21 BKS-S75 BKS-S74 C75B balluff 18 BKS-S20 BKS-S22 BKS-S49 C04A C49B

    Untitled

    Abstract: No abstract text available
    Text: 2N1524/33 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)24 I(C) Max. (A)10m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)16u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N1524/33 Freq33

    Untitled

    Abstract: No abstract text available
    Text: 2N1526/33 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)24 I(C) Max. (A)10m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N1526/33 Freq33

    Untitled

    Abstract: No abstract text available
    Text: SST12CP12 2.4 GHz 256 QAM High-Power Amplifier Features Product Description • High Gain: - Typically 33 dB gain across 2.4–2.5 GHz over temperature -40°C to +85°C • High linear output power, typical performance: - 1.75% dynamic EVM up to 23 dBm, MCS8,


    Original     		PDF SST12CP12 matchi9857 DS70005124B-page

    Untitled

    Abstract: No abstract text available
    Text: SST12CP12 2.4 GHz High-Power and High-Gain Power Amplifier Features Product Description • High Gain: - Typically 33 dB gain across 2.4–2.5 GHz over temperature -40°C to +85°C • High linear output power, typical performance: - 1.75% dynamic EVM up to 23 dBm, MCS8,


    Original     		PDF SST12CP12 mat1-9859 DS70005121A-page

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM3742-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM3742-16UL 95GHz

    TIM5359-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM5359-16UL TIM5359-16UL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM7785-16UL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM5359-16UL

    TIM7785-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM7785-16UL TIM7785-16UL

    TIM3742-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM3742-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM3742-16UL 95GHz TIM3742-16UL

    TIM7179-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM7179-16UL TIM7179-16UL

    TIM7179-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM7179-16UL TIM7179-16UL

    TIM5359-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz n HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM5359-16UL TIM5359-16UL

    TIM3742-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM3742-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		PDF TIM3742-16UL 95GHz TIM3742-16UL

    TIM7179-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		PDF TIM7179-16UL Disto10V TIM7179-16UL

    XFA-0101-16U

    Abstract: XFA-0101-16UH
    Text: XFA-0101-16UH SURFACE MOUNT TRANSFORMER Features • • • • • Frequency Range: 0.165 – 75 MHz Impedance Ratio: 1:16, Unbalanced to Unbalanced Industry Standard SMT package Available in Tape-and -Reel Low Cost Description The XFA-0101-16U transformer is designed for applications that


    Original     		PDF XFA-0101-16UH XFA-0101-16U D-90441, XFA-0101-16UH

    XFA-0101-16U

    Abstract: No abstract text available
    Text: XFA-0101-16U SURFACE MOUNT TRANSFORMER Features • • • • • Frequency Range: 0.3 – 75 MHz Impedance Ratio: 1:16, Unbalanced to Unbalanced Industry Standard SMT package Available in Tape-and -Reel Low Cost Description The XFA-0101-16U transformer is designed for applications that


    Original     		PDF XFA-0101-16U XFA-0101-16U D-90441,

    TIM6472-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM6472-16UL TIM6472-16UL

    TIM6472-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM6472-16UL TIM6472-16UL

    Untitled

    Abstract: No abstract text available
    Text: in te i 82375EB PCI-EISA Bridge PCEB Provides the Bridge Between the PCI Bus and EISA Bus 32-Bit Data Paths 100% PCI and EISA Compatible — PCI and EISA Master/Slave Interface — Directly Drives 10 PCI Loads and 8 EISA Slots — Supports PCI at 25 MHz to 33 MHz


    OCR Scan     		PDF 82375EB 32-Bit 16-byte

    638 pin micro PGA

    Abstract: No abstract text available
    Text: C a t a l o g 16 P r e v i e w RoHS C om pliant IC Sockets S Adapters • O .C 75[l.Q 33 - 1.752 4.4.50] S( 1 fi0 0 [4 0 .fi4 : SÌJ 52 EO. SP. 9 0.C50[ t . & P /N : 5 3 9 7 - 5 6 0 « KM ! £ < • i ss Table o f Contents Table o f Contents B6A Socketing Systems


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 A 0 Uî lf> 0 1 2 250 in I o wa ÜÎÎÉ rT n \j SECT. C 5 C A L E 2-1 3 ß O S E C T . ’ A '-'A ' CSCALE 2-15 CL JUJ Z AVAILABLE AVAILABLE NOT ABA1LAGLE r\ zO O _l f\l1 IÜLL 43 54. 7 48. 7 42. 7 36. 7 33. 7 30. 7 27. 7 24 . 7 21 . 7 1 8 .7 15.7 16 0


    OCR Scan     		PDF 16U1T C-316559 -J010-2C