Hdsl-3600
Abstract: smd transistor 3310 33171 HSDL-3310 3310 DIODE 3310 DIODE DATASHEET 3310
Text: Agilent HSDL-3310 IrDA Data Compliant 1.152 Mb/s Infrared Transceiver Data Sheet Functional Description The HSDL-3310 is a small form factor infrared IR transceiver module that provides interface between logic and IR signals for through-air, serial, half-duplex IR
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HSDL-3310
HSDL-3310
825-Class
5988-0129EN
Hdsl-3600
smd transistor 3310
33171
3310 DIODE
3310 DIODE DATASHEET
3310
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Untitled
Abstract: No abstract text available
Text: 3310 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage1k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)3 @Temp. (øC) (Test Condition)25
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Current10
Current75u
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CTX01-16741
Abstract: zener diode c18 5t MAX5922 diode d2s GRM21BR71C224K "power sourcing equipment" Cooper CTX01 MAX5941B B0863-A C12 IC GATE 5L
Text: 19-3310; Rev 1; 1/05 MAX5941B Evaluation Kit Features The MAX5941B evaluation kit EV kit is a fully assembled and tested surface-mount circuit board featuring an Ethernet port, network powered device (PD) interface and DC-DC PWM controller circuit for -48V systems. The
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MAX5941B
MAX5922
MAX5935
MAX5941B
CTX01-16741
zener diode c18 5t
diode d2s
GRM21BR71C224K
"power sourcing equipment"
Cooper CTX01
B0863-A
C12 IC GATE 5L
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diode d2s
Abstract: CTX01-16741 MOSFET ACER zener diode c18 5t ERJ6ENF1002V GRM21BR71C224K 5pin Fairchild Power Switch SOP4 R11 "power sourcing equipment" C12 IC GATE 5L
Text: 19-3310; Rev 3; 6/06 MAX5941B Evaluation Kit The MAX5941B evaluation kit EV kit is a fully assembled and tested surface-mount circuit board featuring an Ethernet port, network powered device (PD) interface and DC-DC PWM controller circuit for -48V systems. The
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MAX5941B
MAX5922
MAX5935
MAX5941B
diode d2s
CTX01-16741
MOSFET ACER
zener diode c18 5t
ERJ6ENF1002V
GRM21BR71C224K
5pin Fairchild Power Switch
SOP4 R11
"power sourcing equipment"
C12 IC GATE 5L
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IR3310
Abstract: No abstract text available
Text: Data Sheet No.PD60181_B IR3310 PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Product Summary Features • • • • • • • Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Over temperatue shutdown
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PD60181
IR3310
1E-05
IR3310
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3310 DIODE DATASHEET
Abstract: 21F2904
Text: Key Parameters VRRM = 3200 IFAVM = 2110 IFSM = 26.0 VF0 = 0.89 rF = 0.17 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 21F3204 Doc. No. 5SYA 1130 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation
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21F3204
Apr-98
21F2904
21F2604
CH-5600
3310 DIODE DATASHEET
21F2904
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IR3310
Abstract: SMD-220 IR3310S Q100 SMD220
Text: Data Sheet No.PD60181 Rev.E IR3310 S PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Product Summary Features • • • • • • • Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Over temperatue shutdown
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PD60181
IR3310
SMD220)
SMD-220
IR3310S
Q100
SMD220
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MC1648 spice model
Abstract: KEL1648 K1648 varactor diode q factor measurement MC100EL1648 application note capacitor 1.3 mF symbol of varactor diode and equivalent circuit
Text: MC100EL1648 5 V ECL Voltage Controlled Oscillator Amplifier The MC100EL1648 is a voltage controlled oscillator amplifier that requires an external parallel tank circuit consisting of the inductor L and capacitor (C). A varactor diode may be incorporated into the tank
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MC100EL1648
MC1648.
BRD8011/D.
AN1405/D
AN1406/D
AN1503/D
MC1648 spice model
KEL1648
K1648
varactor diode q factor measurement
MC100EL1648 application note
capacitor 1.3 mF
symbol of varactor diode and equivalent circuit
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K1648
Abstract: cd 4050 buffer ic mst 3363 "product detector" MC1648 variable inductor values for 10MHz- 100MHz oscillator MC4044 MV1404 MC100 MC100EL1648
Text: MC100EL1648 5VĄECL Voltage Controlled Oscillator The MC100EL1648 requires an external parallel tank circuit consisting of the inductor L and capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input for
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MC100EL1648
MC100EL1648
MC1648.
r14525
MC100EL1648/D
K1648
cd 4050 buffer ic
mst 3363
"product detector"
MC1648
variable inductor values for 10MHz- 100MHz oscillator
MC4044
MV1404
MC100
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IR3310
Abstract: IR3310S Q100 SMD220
Text: Data Sheet No.PD60181_D IR3310 S PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Product Summary Features • • • • • • • Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Over temperatue shutdown
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PD60181
IR3310
SMD220)
IR3310S
Q100
SMD220
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IR3310
Abstract: IR3310S SMD220
Text: ADVANCE INFORMATION Data Sheet No.PD60181 IR3310 PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Product Summary Features • • • • • • Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Reverse battery protection reverse current operation
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PD60181
IR3310
SMD220)
SMD220
IR3310
IR3310S
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3310 DIODE
Abstract: IR3310
Text: Data Sheet No.PD60181_A IR3310 PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Product Summary Features • • • • • • • Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Over temperatue shutdown
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PD60181
IR3310
1E-05
3310 DIODE
IR3310
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IR3310
Abstract: IR3310S Q100 SMD220
Text: Data Sheet No.PD60181 Rev.E IR3310 S PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Product Summary Features • • • • • • • Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Over temperatue shutdown
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PD60181
IR3310
SMD220)
IR3310S
Q100
SMD220
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omron g2vn-237pl
Abstract: pbl3762a G2VN relay G2VN dr 12v relay
Text: May 1997 TB 205 Testboard for SLIC PBL 3762 A/X, 3764A/X Testboard TB 205 offers a complete Subscriber Line application, equipped with all the essential components, to get an easy access to analogue or digital line card design. The SLIC includes all standard
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764A/X
LS7416N
LZT-15322
S-164
omron g2vn-237pl
pbl3762a
G2VN
relay G2VN
dr 12v relay
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CEM3310
Abstract: ltks 3310 Curtis kt 205 attack 3310 DIODE
Text: OSS CEM 3310 CURTIS €L6CTROmUSIC 5P€CIALTI€5 Voltage Controlled Envelope Generator The CEM 3310 is a self-contained, precision ADSR type o f envel ope generator intended fo r elec tro n ic music and o th e r sound generation applications. A tta c k ,
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CEM3310
CEM3310
ltks
3310
Curtis
kt 205
attack
3310 DIODE
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3306F
Abstract: scu41 3302F 3304F 3304UF 3306UF 3308F 3308UF 3310UF G511
Text: m L3E J> TSlMfiSM ÜG00S1I, lb? H v n I THREE PHASE BRIDGE FULL WAVE 70nS*150nS*3000nS RECOVERY 3302 3304 3306 3308 3310 3302F 3304F 3306F 3308F 331 OF 3302UF 3304UF 3306UF 3308UF 3310UF VOLTAGE MULTIPLIERS INC V RWM = IF = 2 0 0 -1000V 9.0-1 OA * * AC AC
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150nSÂ
3000nS
3302F
3302U
3304F
3304UF
3306F
3306UF
3308F
3308UF
scu41
3304UF
3306UF
3308UF
3310UF
G511
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ZVN3310
Abstract: ZVN3310A ZVN3310B ZVN3310F F159
Text: büE D • T ti?GS7a QODVÔST 3DÔ ■ ZETB — ZETEX SEMICONDUCTORS N-channel enhancement mode vertical DMOS FET ZVN 3310 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance
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0D70ST
ZVN3310
ZVN3310A
ZVN3310B
ZVN3310F
F-162
0007fibS
F-163
ZVN3310
F159
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3110
Abstract: S 3310
Text: 7 CH D 7 4 1 GDG1532 SANKEN 753 « S A K J T-1 Contact Mount Standard Type Diffused SANKEN LIGHT EMITTING DIODES SEL 3510 G SEL 3710 Y SEL 3110 R SEL 3310 G FEATURES • Thermal Capability by Thick Collar • Low Profile • High R eliability/Long Life under Contact
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HD741
GDG1532
HD74J
3110
S 3310
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1N3307
Abstract: 1N3327 1N3327BR IR 94 1N3328 1N3326 1N3311 1N3315 1N3320 1n3321
Text: zener diodes diodes zener Types VZT/'ZT min 50 W / 1N 3305 B 1N 3306 B 1N 3307 B 1N 3308 B 1N 3309 B 1N 3310 B 1N3311 B 1N 3312 B 1N 3314 B 1N3315 B 1N 3317 B 1N 3319 B 1N 3320 B 1N 3321 B 1N 3323 B 1N 3324 B 1N 3325 B 1N 3326 B 1N 3327 B 1N 3328 B 1N 3330 B
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1N3311
1N3307
1N3327
1N3327BR
IR 94
1N3328
1N3326
1N3315
1N3320
1n3321
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3308F
Abstract: 3308UF 3310F 3302F 3302UF 3304F 3304UF 3306F 3306UF
Text: THREE PHASE BRIDGE FULL WAVE 70nS*150nS*3000nS RECOVERY V RWM = I = 3302 3304 3306 3308 3310 2 0 0 -1000V 9 .0 -1 0A Working Reverse Voltage Average Rectified Current Vrwm f - A A À E L E C T R IC A L C H A R A C T E R IS T IC S A N D M A X IM U M Reverse
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150nS
3000nS
3302F
3302UF
3304F
3304UF
3306F
3306UF
3308F
3308UF
3308UF
3310F
3302UF
3304UF
3306UF
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CEM3310
Abstract: jfet s00 jfet transistor for VCR
Text: 25E D • bTIOMS? QQOQ251 S ■ ON CHIP S Y S T EM S CEM 3310 " T - S D - O 0! CURTIS € U C T R 0 fflU 5 tC S P « W fft€ 3 110 H ig h la n d Ave. L o s G atos Ca. 9S030, U S A Tel. 408 395-3350 Voltage Controlled Envelope Generator The C E M 3 3 10 Is a self-contained,
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b71QM57
CEM3310
jfet s00
jfet transistor for VCR
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5D diode
Abstract: ZVN3310 00573E D7950 sw S O T-3 2 3
Text: PLESSEY SEHICOND/DISCRETE TS 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /DI S C R E T E DE 1 7 2 5 G 533 □□□S 7 3 S 3 | 9S D 0 5 7 3 5 T '3 S - i5 ZVN 3310 N-channel enhancement mode vertical D M O S FET FEATURES • Com pact geometry • Fast sw itching speeds
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752DS33
0DG573fl
G-240
00573e
G-241
ZVN3310
G-242
G-243
000574E
5D diode
ZVN3310
00573E
D7950
sw S O T-3 2 3
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STR F 6526
Abstract: A3310 str 6526 la 3310
Text: CA3310A, C A 3310A ¡ I] H A R R CA3310, CA3310A IS S E M I C O N D U C T O R CMOS 10-Bit Analog-to-Digital Converter with Internal Track and Hold GENERAL DESCRIPTION FEATURES The Harris C A3310 is a fast, low pow er, 10-bit successive approxim ation a nalog-to-digital converter, w ith m icrop ro ces
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CA3310A,
CA3310,
CA3310A
10-Bit
A3310
STR F 6526
str 6526
la 3310
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A3310
Abstract: No abstract text available
Text: C A3310A, C A 3 3 1 0 A CA3310, CA3310A i HARRIS U Z S E M I C O N D U C T O R CMOS 10-Bit Analog-to-Digital Converter with Internal Track and Hold GENERAL DESCRIPTION FEATURES The Harris CA3310 is a fast, low power, 10-bit successive approximation analog-to-digital converter, with microproces
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A3310A,
CA3310,
CA3310A
10-Bit
CA3310
A3310
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