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Catalog Datasheet	MFG & Type	Document Tags	PDF
33L5000 Abstract: 5SDD33L5000 JAN95 33L4800 Text: Key Parameters ^FAVM = 5SDD 33L5000 50000 A II 5180 A / frms = 1FSM = 1.00 V O Rectifier Diode 5000 V 3300 A VRSM = 0.130 mQ rF Doc. No. 5SYA 1102-01 Jan.95 Features • Patented free-floating silicon technology. • Very low on-state power losses. • High average and surge current.	OCR Scan	33L5000 33L5000 33L4800 33L4400 CH-5600 5SDD33L5000 JAN95	PDF

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33L5000

Abstract: 5SDD33L5000 JAN95 33L4800
Text: Key Parameters ^FAVM = 5SDD 33L5000 50000 A II 5180 A / frms = 1FSM = 1.00 V O Rectifier Diode 5000 V 3300 A VRSM = 0.130 mQ rF Doc. No. 5SYA 1102-01 Jan.95 Features • Patented free-floating silicon technology. • Very low on-state power losses. • High average and surge current.

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33L5000 33L5000 33L4800 33L4400 CH-5600 5SDD33L5000 JAN95

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