Untitled
Abstract: No abstract text available
Text: 181-34002 - Slotted Wall Home Events Careers How To Buy Contact Search Products Cable Ties Cable Ties with Fasteners Cable Tie Tools Clamps and Clips Industries Resources News About Us 181-34002 Slotted Wall Wiring Duct, 3" X 4" Non-Adhesive, PVC, Black, 120ft/Carton
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Original
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120ft/Carton
120ft
TS16949,
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PDF
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Q62702-P1103
Abstract: Q62702-P1796 Q62702-P1805 Q62702-P3605
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet für Vapor Phase-Löten und IR-Reflow-Löten
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Original
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OHF00327
OHF02341
GEO06953
Q62702-P1103
Q62702-P1796
Q62702-P1805
Q62702-P3605
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PDF
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AN 34002
Abstract: No abstract text available
Text: 2008-07-30 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.0 SFH 3400 Features: Besondere Merkmale: • Spectral range of sensitivity: 460 . 1080 nm • Package: Smart DIL • Special: High linearity • Available only on tape and reel
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Original
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D-93055
AN 34002
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PDF
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34053
Abstract: 34043 34059NT 34004 34044-NT 34049 34017 M83446/11 34007 34051
Text: M I L I TA R Y P R O D U C T S Magnetically Shielded Chip Inductors M83446/11 - Series 34,000 Qualified Product Listed MIL-PRF-83446 IN MM 0.163 4.140 0.147 3.734 0.133 3.378 0.130 3.302 0.117 2.972 0.073 1.854 0.040 1.016 0.037 0.940 0.020 0.508 0.015 0.381
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Original
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M83446/11
MIL-PRF-83446
M83446/11
34053
34043
34059NT
34004
34044-NT
34049
34017
34007
34051
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PDF
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Untitled
Abstract: No abstract text available
Text: 340MHz SAW Filter 22MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBN34002 www.sipatsaw.com Features For RF SAW filter Single-ended operation Ceramic Surface Mount Package Small size
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Original
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340MHz
22MHz
LBN34002
2002/95/EC)
10MHz)
305MHz
10deg/Div
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PDF
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AN569
Abstract: U425
Text: Order this data sheet by MTH6N100E/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s MTH6NIOOE Data sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.
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Original
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MTH6N100E/D
O-218AC
AN569
U425
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PDF
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Untitled
Abstract: No abstract text available
Text: g MOTOROLA M ilitary 54F11 Triple 3-Input AND Gate MP0 ELECTRICALLY TESTED PER: MIL-M-38510/34002 « ///// LOGIC DIAGRAM Vqc C1 Y1 C3 B3 A3 Y3 nri frri [TT] rrn H nn it i AVAILABLE AS: 1) JAN: JM38510/34002BXA 2) SMD: N/A 3 )8 8 3 : 54F11/BXAJC X = CASE OUTLINE AS FOLLOWS:
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OCR Scan
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MIL-M-38510/34002
54F11
JM38510/34002BXA
54F11/BXAJC
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PDF
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34002
Abstract: MC34002AN an 34002 MC34002AD
Text: M C 33 00 2/A /B M C 34002/A /B M C 35 00 2/A /B SGS-THOMSON *5 7 li^ D e ^ [l[L i g ¥ ^ (S ® { lD i J-FET INPUT DUAL OP-AMPs LOW POWER CONSUMPTION i WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE i LOW INPUT BIAS AND OFFSET CURRENT i OUTPUT SHORT-CIRCUIT PROTECTION
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OCR Scan
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MC33002/A/B
MC34002/A/B
MC35002/A/B
LCC20
27max.
MC33002/A/B-MC34002/A/B-MC35002/A/B
34002
MC34002AN
an 34002
MC34002AD
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PDF
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34002 op
Abstract: MC34002 mc34001 MC3400X 34004b LM324 Motorola ANALOG
Text: 8 < >MOTOROLA M C 34001, B M C 34002, B M C34004, B JFET Input O perational A m plifiers T hese low co st JFE T input op eratio nal a m plifiers com bine tw o s ta te -o f-th e -a rt analog technologies on a single m onolithic integrated circuit. Each internally com pensated operational am plifier has well matched
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OCR Scan
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MC1741,
3403/LM
34002 op
MC34002
mc34001
MC3400X
34004b
LM324
Motorola ANALOG
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PDF
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Untitled
Abstract: No abstract text available
Text: g M ilita ry 5 4 F 1 1 MOTOROLA Triple 3-In pu t AND G ate MPO ELECTRICALLY TESTED PER: MIL-M-38510/34002 mini LOGIC DIAGRAM V çc R C1 Y1 C3 fisi R i R B3 A3 fîôl (TI ITI AVAILABLE AS: 1) JAN: JM38510/34002BXA 2) SMD: N/A 3)883: 54F11/BXAJC X = CASE OUTLINE AS FOLLOWS:
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OCR Scan
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MIL-M-38510/34002
JM38510/34002BXA
54F11/BXAJC
56A-02
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PDF
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA Military 54F11 Triple 3-Input A N D G ate ELECTRICALLY TESTED PER: MIL-M-38510/34002 A VA ILA BLE A S: LOGIC DIAGRAM V cc Cl Y1 C3 B3 A3 1 JAN : JM 38510/34002BXA 2) S M D : • 3) 883C: 54F11/BXAJC Y3 r»i pài h h h rn m j X = C A S E O U TLIN E A S FO LLOW S:
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OCR Scan
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54F11
MIL-M-38510/34002
38510/34002BXA
54F11/BXAJC
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PDF
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MC34002
Abstract: MC34002U MC34002P mc34002ap MC34002 equivalent MC34002BU MC34002A MC34002B Polycarbonate capacitor 20Hz-to-200Hz
Text: MC34002 LINEAR INTEGRATED CIRCUITS JF E T -IN P U T D U A L O P E R A T IO N A L A M P L IF IE R S • H IG H S L E W -R A T E . 13V/jus T Y P . • LO W POW ER C O N S U M P T IO N • W ID E C O M M O N - M O D E A N D E N T IA L V O L T A G E R A N G E S
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OCR Scan
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MC34002
MC34002
52max
MC34002U
MC34002P
mc34002ap
MC34002 equivalent
MC34002BU
MC34002A
MC34002B
Polycarbonate capacitor
20Hz-to-200Hz
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PDF
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34004
Abstract: hv 9961 MC34004BL 34002 op LM324 MC1741 MC34002 equivalent 35004B MC1458 MC34002
Text: MC34001, MC35001 MC34002, MC35002 MC34004, MC35004 MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Input Operational Amplifiers These low cost JFET Input operational amplifiers combine two state-of-the-art linear technologies on a single monolithic integrated circuit. Each internally
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OCR Scan
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MC34001,
MC35001
MC34002,
MC35002
MC34004,
MC35004
MC1741,
MC1458,
MC3403/LM324
MC35001/35002/35004
34004
hv 9961
MC34004BL
34002 op
LM324
MC1741
MC34002 equivalent
35004B
MC1458
MC34002
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PDF
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MC35002AU
Abstract: MC34002AP MC1408L mc1508l8
Text: MO TOR OLA SC {TELE COM} 01 6367253 MOTOROLA SC L,3b7253 000073"] & D <TÉLÉCOM 0 1E 8 0 7 3 9 D MC34001, MC35001 MC34002, MC35002 MC34004, MC35004 MOTOROLA JFET INPUT OPERATIONAL AMPLIFIERS Th e se lo w cost J F E T In p u t o p e ra tio n a l a m p lifie rs c o m b in e tw o
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OCR Scan
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3b7253
MC34001,
MC35001
MC34002,
MC35002
MC34004,
MC35004
MC35002AU
MC34002AP
MC1408L
mc1508l8
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PDF
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35002a
Abstract: 34002A
Text: C r C .T U ñ M C n il w U ö I n U m O U Il BíflD»i[LIl gW ISDOgi MC33002/A/B MC34002/A/B MC35002/A/B GENERAL PURPOSE DUAL JFET OPERATIONAL AMPLIFIERS • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE (UP TO Vcc+) AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT
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OCR Scan
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MC33002/A/B
MC34002/A/B
MC35002/A/B
35002a
34002A
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PDF
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MC34002
Abstract: fet SS55 MC33002 MC35002 MC34002 equivalent 118PF
Text: SCS-THOMSON mcS Â /b _M C 3 5 0 0 2 / A / B GENERAL PURPOSE DUAL JFET OPERATIONAL AMPLIFIERS LOW POWER CONSUMPTION WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION
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OCR Scan
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MC35002/A/B
MC33002/A/B
MC34002/A/B
Gain-of-10
10OKHz
118pF
1N4148
MC34002,
MC34002
fet SS55
MC33002
MC35002
MC34002 equivalent
118PF
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PDF
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LM324
Abstract: MC3400X IC 8 PIN 2267 MC340
Text: MOTOROLA M C 34001, B MC34002, B MC34004, B JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state-of-the-art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched
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OCR Scan
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MC1741,
MC1458,
MC3403/LM324
MC34001/
10lating
b3b7253
LM324
MC3400X
IC 8 PIN 2267
MC340
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PDF
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LF353N "pin-compatible"
Abstract: LF351D MC1458 a 34004
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Input Operational Amplifiers FAMILY OF JFET OPERATIONAL AMPLIFIERS These low cost JFET input operational amplifiers combine two state-of-the-art linear technologies on a single monolithic integrated circuit. Each internally
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OCR Scan
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MC1458,
C3403/LM324
LF347B)
MC34001,
LF353N "pin-compatible"
LF351D
MC1458 a
34004
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PDF
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34004
Abstract: 34002 op LF351D LF353 MOTOROLA
Text: 8 < > LF347, B LF351 LF353 MOTOROLA JFET Input Operational Amplifiers T h ese low co st JF E T input op eratio nal am plifiers com bine tw o s ta te -o f-th e -a rt analog technologies on a single monolithic integrated circuit. Each internally com pensated operational am plifier has well matched
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OCR Scan
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MC1741,
MC1458,
C3403/LM
LF347B)
LF347
LF351
LF353
LF347,
LF353)
34004
34002 op
LF351D
LF353 MOTOROLA
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PDF
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7N45
Abstract: mth7n50 mth7n45
Text: MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA M T H 7N 45 M T H 7N 50 M TM 7N45 M TM 7N50 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators,
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OCR Scan
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O-204AA
O-218AC
7N45
mth7n50
mth7n45
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PDF
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Untitled
Abstract: No abstract text available
Text: S A W 7 -f l/ £ SAW Filter) KSS L S F B 4 4 -4 2 6 -8 0 0 K 0 / LS FB 4 4 -4 2 9 -8 0 0 K 0 LS FA 02-4 34-002 M 0 / LS FA 0 2 -4 2 2 -8 0 0 K 0 LS FA 0 2 -4 4 0 -4 0 0 K 0 / LSFB20-469-001 MO /Jv'E ^)ffl400M H z^:/4 0 0 M H z Band SAW Filter of Low power consumption
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OCR Scan
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LSFB20-469-001
ffl400M
400kHz
LSFB44
LSFA02
LSFB20
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PDF
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MTH13N50E
Abstract: No abstract text available
Text: MOTOROLA SC ÍXSTRS/R F> 2bE D • b3b?2S4 0 0 ^ 0 4 ñ Order this data sheet by MTH13N50E/D MOTOROLA E3 SEMICONDUCTOR TECHNICAL DATA MTH13N50E Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate T M O S POWER FET
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OCR Scan
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MTH13N50E/D
MTH13N50E
swi065
O-218AC
C66760
MTH13N50E
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PDF
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MOTOROLA 24121
Abstract: 37HS4
Text: motorola sc -c x s t r s / r f > abE D b 3 b ?e s4 ü im a a a Order this data sheet by MTH8N50E/D 4 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTH8N50E TMOS E-FET High Energy Power FET TMOS POWER FET 8.0 AMPERES rDS on = °-8 OHMS 500 VOLTS
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OCR Scan
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MTH8N50E/D
MTH8N50E
CM760
MOTOROLA 24121
37HS4
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PDF
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8p20
Abstract: MTM8P20
Text: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA M TH 8P 18 M TH 8P 20 M TM 8P18 M TM 8P20 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TMOS These TM O S P ow er FETs are desig n ed fo r m e d iu m voltage,
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OCR Scan
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PDF
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