Untitled
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Text: 2N3462 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)70n¥ @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)5.0m
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2N3462
Freq10M
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2SD1077
Abstract: No abstract text available
Text: 2SD1077 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SD1077
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Text: 2N1469+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N1469
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2SC1737
Abstract: No abstract text available
Text: 2SC1737 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC1737
Freq150M
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Untitled
Abstract: No abstract text available
Text: 2N1231 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m
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2N1231
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Text: 2N1026A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).02u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N1026A
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Text: 2N1469 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N1469
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Text: QD204-78 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)20m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100pØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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QD204-78
Freq100M
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Abstract: No abstract text available
Text: 2N1230 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m
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2N1230
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2SC1213-C
Abstract: No abstract text available
Text: 2SC1213C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)500m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC1213C
2SC1213-C
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Text: 2N1025+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N1025
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Text: 2N1241 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m
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2N1241
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Text: 2N325 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A).50mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N325
Freq150kÂ
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Abstract: No abstract text available
Text: 2SC2405 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC2405
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2N1025
Abstract: No abstract text available
Text: 2N1025 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N1025
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Text: 2N1026 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N1026
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Untitled
Abstract: No abstract text available
Text: 2N1240 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)12 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m
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2N1240
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Untitled
Abstract: No abstract text available
Text: 2N3469 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)35 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)200# I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.0
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2N3469
Freq20M
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Untitled
Abstract: No abstract text available
Text: 2N938 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)5.0m
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2N938
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Untitled
Abstract: No abstract text available
Text: 2SC284 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)70 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC) I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.35 h(FE) Max. Current gain.
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2SC284
Freq200M
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Untitled
Abstract: No abstract text available
Text: PE1003 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)35â V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.
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PE1003
Freq200M
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Untitled
Abstract: No abstract text available
Text: 2SC1162D Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.160 h(FE) Max. Current gain.320
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2SC1162D
Freq180M
StyleTO-126
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Abstract: No abstract text available
Text: 2SC2639 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)17 V(BR)CBO (V)35 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.
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2SC2639
Freq300M
Code4-28
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2n1009
Abstract: No abstract text available
Text: 2N1009 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35ã V(BR)CBO (V)35 I(C) Max. (A)300m Absolute Max. Power Diss. (W)400m# Maximum Operating Temp (øC)85þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.
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2N1009
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